Method and system for in-situ cleaning of semiconductor manufacturing equipment using combination chemistries
First Claim
1. A method of cleaning deposits in semiconductor manufacturing equipment wherein there are different types of deposits including powdery and dense film-like deposits, characterized in that the equipment is cleaned using two separate steps, each of said steps using different fluorine containing chemicals to selectively clean the different deposits.
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Abstract
An in-situ, two step or combination, method and system for cleaning of semiconductor manufacturing equipment is provided. The present invention utilizes two separate fluorine based chemistries in each step which selectively target the removal of different types of deposits that build up on the equipment surfaces. In particular, powdery and dense film-like solid deposits, as well as a combination of both, build up on the chamber surfaces and associated equipment components. These two types of deposits are removed selectively by the present invention. Such selective targeting of combined cleaning steps, yields an improved cleaning technique. In another embodiment, the method and system of the present invention provides for cleaning of the chamber and associated equipment using separate steps with different chemicals, and then performing these steps in a variety of desired sequences.
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Citations
21 Claims
- 1. A method of cleaning deposits in semiconductor manufacturing equipment wherein there are different types of deposits including powdery and dense film-like deposits, characterized in that the equipment is cleaned using two separate steps, each of said steps using different fluorine containing chemicals to selectively clean the different deposits.
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10. A method of in-situ cleaning a chamber containing both powdery and dense film-like silicate deposits, comprising the steps of:
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first cleaning one of the powdery type or dense film-type deposits with a first fluorine containing cleaning gas that etches primarily the one type of deposit; and
second cleaning the other of the powdery type or dense film type deposit with a second fluorine containing cleaning gas that etches primarily the other type of deposit. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification