Process and apparatus for applying charged particles to a substrate, process for forming a layer on a substrate, products made therefrom
First Claim
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1. A method for deposition of particles onto a substrate, the method comprising:
- (a) providing dry particles with electrostatic charges to form dry charged particles;
(b) providing the substrate with an electrostatic potential suitable to electrostatically attract the dry charged particles;
(c) contacting the dry charged particles with the substrate to form a particle coated substrate;
(d) growing a polycrystalline layer on the particle coated substrate;
wherein the particles comprise at least one selected from the group consisting of cubic boron nitride, tungsten carbide, silicon carbide, aluminum oxide, silicon nitride, yttrium-based superconductors, thallium-based superconductors, and combinations thereof, and wherein the substrate comprises at least one selected from the group consisting of silica, silicon, alumina, molybdenum, steel, silicon carbide, tungsten carbide, tungsten, silicon nitride, nickel, yttrium-based superconductors, thallium-based superconductors and combinations thereof; and
(e) forming a crystalline layer onto the particles, wherein the crystalline layer comprises at least one selected from the group consisting of cubic boron nitride, tungsten carbide, silicon carbide, aluminum oxide, silicon nitride, and combinations thereof.
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Abstract
Method and apparatus for seeding silicon substrates with diamond particles by electrostatic seeding. Method further includes either application of heat to form the particles into a layer, or chemical vapor deposition of diamond layer onto the particles. Disclosed products include silicon substrate having electrostatically affixed diamond particles, silicon substrate having particles at a density of at least 1012 particles per cm2, and silicon substrate having polycrystalline layer having nucleation density of at least 1012 particles per cm2.
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Citations
5 Claims
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1. A method for deposition of particles onto a substrate, the method comprising:
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(a) providing dry particles with electrostatic charges to form dry charged particles;
(b) providing the substrate with an electrostatic potential suitable to electrostatically attract the dry charged particles;
(c) contacting the dry charged particles with the substrate to form a particle coated substrate;
(d) growing a polycrystalline layer on the particle coated substrate;
wherein the particles comprise at least one selected from the group consisting of cubic boron nitride, tungsten carbide, silicon carbide, aluminum oxide, silicon nitride, yttrium-based superconductors, thallium-based superconductors, and combinations thereof, and wherein the substrate comprises at least one selected from the group consisting of silica, silicon, alumina, molybdenum, steel, silicon carbide, tungsten carbide, tungsten, silicon nitride, nickel, yttrium-based superconductors, thallium-based superconductors and combinations thereof; and
(e) forming a crystalline layer onto the particles, wherein the crystalline layer comprises at least one selected from the group consisting of cubic boron nitride, tungsten carbide, silicon carbide, aluminum oxide, silicon nitride, and combinations thereof. - View Dependent Claims (2, 3)
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4. A method for deposition of particles onto a substrate, the method comprising:
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(a) dispersing particles into a liquid to create a dispersion;
(b) aerosolizing the dispersion of the particles;
(c) drying the particles to form dry particles capable of becoming electrostatically charged;
(d) electrostatically charging the dry particles of the dispersion with electrostatic charges of one polarity to form dry charged particles;
(e) providing the substrate with electrostatic charge suitable to electrostatically attract the dry charged particles;
(f) contacting the dry charged particles with the substrate to form a particle coated substrate;
(g) growing a polycrystalline layer on the particle coated substrate;
wherein the dry particles comprise at least one selected from the group consisting of cubic boron nitride, tungsten carbide, silicon carbide, aluminum oxide, silicon nitride, yttrium-based superconductors, thallium-based superconductors, and combinations thereof, and wherein the substrate comprises at least one selected from the group consisting of silica, silicon, alumina, molybdenum, steel, silicon carbide, tungsten carbide, tungsten, silicon nitride, nickel, yttrium-based superconductors, thallium-based superconductors and combinations thereof; and
(h) forming a crystalline layer onto the particles, wherein the crystalline layer comprises at least one selected from the group consisting of cubic boron nitride, tungsten carbide, silicon carbide, aluminum oxide, silicon nitride, and combinations thereof. - View Dependent Claims (5)
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Specification