Methods for reducing the curvature in boron-doped silicon micromachined structures

• US 6,544,655 B1
• Filed: 08/08/2000
• Issued: 04/08/2003
• Est. Priority Date: 08/08/2000
• Status: Expired due to Fees

• Current Assignee: Honeywell International Inc.
• Original Assignee: Honeywell International Inc.
• Inventors: Glenn, Max C., Erdmann, Francis M., Cabuz, Cleopatra, Horning, Robert D.
• Primary Examiner(s): Jones, Deborah
• Assistant Examiner(s): STEIN, STEPHEN J
• Application Number:
  US09/634,932
• Time in Patent Office: 973 Days
• Field of Search: 428/446, 428/448, 428/704, 428/213, 423/324, 423/348
• US Class Current: 428/446
• CPC Class Codes: B81C 1/00365 having low tensile stress between layers
• CPC Class Codes: B81C 2201/0164 by doping the layer
• CPC Class Codes: Y10T 428/21 Circular sheet or circular blank
• CPC Class Codes: Y10T 428/2495 Thickness [relative or absolute]

Abstract

Layers of boron-doped silicon having reduced out-of-plane curvature are disclosed. The layers have substantially equal concentrations of boron near the top and bottom surfaces. Since the opposing concentrations are substantially equal, the compressive stresses on the layers are substantially balanced, thereby resulting in layers with reduced out-of-plane curvature.

Claims

1. A wafer comprising:

a substrate layer having a top surface and a bottom surface, and a thickness;

a top boron-doped silicon layer having a thickness and positioned adjacent to the top surface of the substrate layer; and

a bottom boron-doped silicon layer having a thickness and positioned adjacent to the bottom surface of the substrate layer; and

wherein the thickness of the substrate layer is at least and order of magnitude greater than the thickness of the top or bottom boron-doped silicon layer.

2. The wafer of claim 1, wherein a concentration of boron doping for each silicon layer is selected to reduce the curvature of the wafer.

3. A substantially planar layer, comprising:

a boron-doped silicon layer having first and second opposing surfaces; and

a substantially symmetrical boron doping profile between the first and second opposing surfaces of the boron-doped silicon layer.

4. A substantially planar layer according to claim 3, wherein the boron doping profile includes substantially similar boron-tails adjacent the first and second opposing surfaces.

5. A substantially planar layer according to claim 3, wherein the boron doping profile is substantially constant from the first and second opposing surfaces.

6. A substantially planar layer according to claim 3, wherein the boron doping profile does not deviate more than about one order of magnitude from the first and second opposing surfaces.