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Method for treating silicon-containing polymer layers with plasma or electromagnetic radiation

  • US 6,544,858 B1
  • Filed: 08/18/2000
  • Issued: 04/08/2003
  • Est. Priority Date: 01/28/1998
  • Status: Expired due to Term
First Claim
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1. A method of treating a surface of a substrate, which method comprises:

  • depositing a silicon-containing polymer in a recess on the surface of the substrate;

    heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and

    subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source, wherein the silicon-containing polymer is deposited on the surface of the substrate by positioning the substrate in a chamber, introducing into the chamber a silicon-containing gas or vapour and a compound containing peroxide bonding, in vapour form, and reacting the silicon-containing gas or vapour with the compound to form the polymer.

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