Method for treating silicon-containing polymer layers with plasma or electromagnetic radiation

• US 6,544,858 B1
• Filed: 08/18/2000
• Issued: 04/08/2003
• Est. Priority Date: 01/28/1998
• Status: Expired due to Term

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Trikon Equipments Limited
• Inventors: Beekman, Knut, Patel, Jashu
• Primary Examiner(s): Whitehead, Jr., Carl
• Assistant Examiner(s): Huynh, Yennhu B.
• Application Number:
  US09/601,086
• Time in Patent Office: 963 Days
• Field of Search: 438/400, 438/437, 438/421-425, 438/439, 438/713
• US Class Current: 438/400
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0234 treatment by exposure to a plasma
• CPC Class Codes: H01L 21/31051 Planarisation of the insulating layers H01L21/31058 takes precedence
• CPC Class Codes: H01L 21/31612 on a silicon body

Abstract

A silicon-containing polymer is deposited in a recess on the surface of the substrate. The substrate is then heated to a given temperature. The surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, is subjected to gas or vapor activated by a plasma or other electromagnetic radiation which is distinct from a source of heat used to heat the substrate to the given temperature.

Claims

1. A method of treating a surface of a substrate, which method comprises:

depositing a silicon-containing polymer in a recess on the surface of the substrate;

heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and

subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source,

wherein the silicon-containing polymer is deposited on the surface of the substrate by positioning the substrate in a chamber, introducing into the chamber a silicon-containing gas or vapour and a compound containing peroxide bonding, in vapour form, and reacting the silicon-containing gas or vapour with the compound to form the polymer.

2. A method according to claim 1, wherein the silicon-containing gas is a silane or higher silane.

3. A method according to claim 1, wherein the compound containing peroxide bonding is hydrogen peroxide.

4. A method according to claim 1, wherein the surface of the substrate is subjected to the activated gas or vapour after a period of the heating of the substrate.

5. A method according to claim 1, wherein the activated gas or vapour is an oxygen plasma.

6. A method according to claim 1, wherein the activated gas or vapour is a CF₄ plasma.

7. A method according to claim 1, wherein the heat source is a heated platen which supports the substrate.

8. A method according to claim 1, wherein the given temperature is in a range of 300°

C. to 500°

C.

9. A method according to claim 1, wherein the substrate is positioned on a platen connected to an RF power source.

10. A method according to claim 9, wherein the RF power is less than 1 MHz.

11. A method according to claim 1, further comprising depositing or forming a capping layer on the substrate of the deposited polymer.

12. A method according to claim 11, wherein the capping layer is deposited after subjecting the substrate to the activated gas or vapour.

13. A method according to claim 11, wherein the capping layer is formed of SiO₂.

14. A method according to any one of claims 11, further comprising heating the polymer after capping.

15. A method according to claim 1, wherein the polymer is densified.

16. A method according to claim 1, wherein an underlayer of thermal oxide is provided on the substrate under the deposited polymer.

17. A method according to claim 16, wherein a mask is formed on the thermal oxide layer.

18. A method according to claim 1 in a shallow trench isolation process, wherein the recess width is between 0.13 and 0.35 microns.

19. A method according to claim 1 in a shallow trench isolation process, wherein the recess depth is between 0.3 and 0.5 microns.

20. A method according to claim 1, wherein the silicon-containing polymer extends from the recess above the surface of the substrate, and wherein the substrate is a semiconductor wafer.

21. A method according to claim 1, wherein the polymer is an intermetal dielectric.

22. A method according to claim 21, wherein the recess is formed of an intermetal gap of between 0.13 and 0.35 microns.

23. A method according to claim 1, wherein the gas or vapour pressure is between 5 mTorr and 500 mTorr.

24. A method of isolating active zones in a semiconductor layer on a substrate having a layer of thermal oxide on its surface, comprising:

depositing a silicon-containing polymer in one or more recesses separating the active zones;

heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by transferring heat to the substrate to a heat source; and

subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to a gas or vapour activated by a plasma or other electro-magnetic radiation which is distinct from the heat source such that a wet etch rate of the silicon-containing polymer is reduced to be similar to that of the thermal oxide.

25. A method according to claim 24, wherein the thermal oxide layer is etched.

26. A method according to claim 25, wherein the thermal oxide layer is etched using buffered hydrofluoric acid.

27. A method according to claim 24, wherein the wet etch rate of the silicon-containing polymer is reduced to 1.2 times faster than that of the thermal oxide.

28. A method of treating a surface of a substrate, which method comprises:

depositing a silicon-containing polymer in a recess on the surface of the substrate;

heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and

subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source,

wherein the activated gas or vapour is a CF₄ plasma.

29. A method of treating a surface of a substrate, which method comprises:

depositing a silicon-containing polymer in a recess on the surface of the substrate;

heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and

subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source,

wherein the substrate is positioned on a platen connected to an RF power source.

30. A method according to claim 29, wherein the RF power is less than 1 MHz.

31. A method of treating a surface of a substrate, which method comprises:

depositing a silicon-containing polymer in a recess on the surface of the substrate;

heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and

subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source,

wherein the polymer is densified.

32. A method of treating a surface of a substrate, which method comprises:

depositing a silicon-containing polymer in a recess on the surface of the substrate;

heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and

subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source,

wherein an underlayer of thermal oxide is provided on the substrate under the deposited polymer.

33. A method according to claim 32, wherein a mask is formed on the thermal oxide layer.

34. A method of treating a surface of a substrate, which method comprises:

depositing a silicon-containing polymer in a recess on the surface of the substrate;

heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and

subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source,

wherein the method is carried out in a shallow trench isolation process, and wherein the recess width is between 0.13 and 0.35 microns.

35. A method of treating a surface of a substrate, which method comprises:

depositing a silicon-containing polymer in a recess on the surface of the substrate;

heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and

subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source,

wherein the method is carried out in a shallow trench isolation process, and wherein the recess depth is between 0.3 and 0.5 microns.

36. A method of treating a surface of a substrate, which method comprises:

depositing a silicon-containing polymer in a recess on the surface of the substrate;

heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and

subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source,

wherein the method is carried out in an intermetal dielectric process, and wherein the recess is formed of an intermetal gap of between 0.13 and 0.35 microns.

37. A method of treating a surface of a substrate, which method comprises:

depositing a silicon-containing polymer in a recess on the surface of the substrate;

heating the substrate, having the silicon-containing polymer deposited thereon, to a given temperature by exposing the substrate to a heat source; and

subjecting the surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, to gas or vapour activated by a plasma or other electromagnetic radiation which is distinct from the heat source,

wherein the gas or vapour pressure is between 5 mTorr and 500 mTorr.