Method of fabricating semiconductor wafers having multiple height subsurface layers

• US 6,544,863 B1
• Filed: 08/21/2001
• Issued: 04/08/2003
• Est. Priority Date: 08/21/2001
• Status: Expired due to Term

• Current Assignee: Calient AI Incorporated
• Original Assignee: Calient Networks Incorporated
• Inventors: Waldrop, Paul, Chong, John M., Adams, Scott, Davis, Tim
• Primary Examiner(s): Cuneo, Kamand
• Assistant Examiner(s): KILDAY, LISA A
• Application Number:
  US09/934,783
• Time in Patent Office: 595 Days
• Field of Search: 438/455-459, 438/689, 438/718, 438/740, 438/745, 438/752, 438/753, 257/642, 216/2
• US Class Current: 438/455
• CPC Class Codes: B81C 1/00619 Forming high aspect ratio structures having deep steep walls

Abstract

A method for fabricating semiconductor wafers as multiple-depth structure (i.e., having portions of varying height). The method includes patterning a first substrate and bonding a second substrate to the first. This process creates a subsurface patterned layer. Portions of the second substrate may then be etched, exposing the subsurface patterned layer for selective processing. For example, the layered structure may then be repeatedly etched to produce a multiple depth structure. Or, for example, exposed portions of the first substrate may have material added to them to create multiple-depth structures. This method of fabrication provides substantial advantages over previous methods.

Claims

1. A method comprising:

forming a first protective layer upon a first substrate layer;

selectively patterning the first protective layer such that patterned portions of the first protective layer are reduced;

bonding a second substrate layer to the first protective layer such that a subsurface patterned layer is formed;

forming a second protective layer upon the second substrate layer;

selectively patterning the second protective layer such that portions of the second substrate layer are exposed;

etching the exposed portions of the second substrate layer such that the subsurface patterned layer is exposed;

etching the subsurface patterned layer such that the patterned portions are removed, exposing portions of the first substrate layer; and

etching the exposed portions of the first substrate layer such that a multiple-depth structure is formed.

3. The method of claim 1 wherein the first substrate and the second substrate are silicon wafers.

4. The method of claim 1 wherein the first substrate layer and the second substrate layer are different materials.

5. The method of claim 1 wherein the first substrate and the second substrate are composed of a material selected from the group consisting essentially of a semiconductor, glass, and metal.

6. The method of claim 1 wherein the etching is accomplished through use of an etching process selected from the group consisting of reactive ion etching, wet chemical etching, and laser ablation etching.

9. The method of claim 1 wherein the first protective layer and the second protective layer are layers of silicon dioxide.

10. The method of claim 9 wherein the first protective layer and the second protective layer are formed upon the first substrate layer and the second substrate layer, respectively, through an oxidation process.

2. A method comprising:

forming a first protective layer upon a first substrate layer;

selectively patterning the first protective layer such that patterned portions of the first protective layer are reduced;

bonding a second substrate layer to the first protective layer such that a subsurface patterned layer is formed;

forming a second protective layer upon the second substrate layer;

selectively patterning the second protective layer such that portions of the second substrate layer are exposed;

etching the exposed portions of the second substrate layer such that the subsurface patterned layer is exposed;

etching the subsurface patterned layer such that the patterned portions are removed, exposing portions of the first substrate layer; and

adding material to the exposed portions of the first substrate layer such that a multiple-depth structure is formed.

7. The method of claim 2 wherein the material is added through a process selected from the group consisting of an electroplating process, an electroless plating process, and a fill and planarize process.

8. The method of claim 7 wherein the first substrate layer is silicon and the material is tungsten.

11. A method comprising:

forming a first protective layer upon a first substrate layer;

selectively patterning the first protective layer such that patterned portions of the protective layer on a top side of the first substrate layer are reduced;

bonding a second substrate layer to the top side of the first substrate layer such that a subsurface patterned layer is formed;

forming a second protective layer upon the second substrate layer;

selectively patterning the first protective,layer on a bottom side of the first substrate layer such that portions of the first substrate layer are exposed;

etching the exposed portions of the first substrate layer such that the subsurface patterned layer is exposed;

etching the subsurface patterned layer such that the patterned portions are removed, exposing portions of the second substrate layer; and

etching the exposed portions of the second substrate layer such that a multiple-depth structure is formed.

12. A method comprising:

forming a first protective layer upon a first substrate layer;

selectively patterning the first protective layer such that patterned portions of the first protective layer are reduced;

depositing a second substrate layer to the first protective layer such that a subsurface patterned layer is formed;

forming a second protective layer upon the second substrate layer;

selectively patterning the second protective layer such that portions of the second substrate layer are exposed;

etching the exposed portions of the second substrate layer such that the subsurface patterned layer is exposed;

etching the subsurface patterned layer such that the patterned portions are removed, exposing portions of the first substrate layer; and

etching the exposed portions of the first substrate layer such that a multiple-depth structure is formed.

13. A method comprising:

a) forming a protective layer upon a substrate layer;

b) selectively patterning the protective layer such that patterned portions of the protective layer are reduced;

c) bonding another substrate layer to the protective layer such that a subsurface patterned layer is formed;

d) repeating operations a-c as desired;

e) forming a final protective layer upon the final substrate layer;

f) selectively patterning the final protective layer such that portions of the final substrate layer are exposed;

g) etching the exposed portions of the final substrate layer such that a final subsurface patterned layer is exposed;

h) etching the exposed subsurface patterned layer such that the patterned portions are removed, exposing portions of a previous substrate layer;

i) etching the exposed portions of the previous substrate layer such that a previous subsurface patterned layer is exposed; and

repeating operations h-i such that a multiple-depth structure is formed.