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Method of fabricating semiconductor wafers having multiple height subsurface layers

  • US 6,544,863 B1
  • Filed: 08/21/2001
  • Issued: 04/08/2003
  • Est. Priority Date: 08/21/2001
  • Status: Expired due to Term
First Claim
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1. A method comprising:

  • forming a first protective layer upon a first substrate layer;

    selectively patterning the first protective layer such that patterned portions of the first protective layer are reduced;

    bonding a second substrate layer to the first protective layer such that a subsurface patterned layer is formed;

    forming a second protective layer upon the second substrate layer;

    selectively patterning the second protective layer such that portions of the second substrate layer are exposed;

    etching the exposed portions of the second substrate layer such that the subsurface patterned layer is exposed;

    etching the subsurface patterned layer such that the patterned portions are removed, exposing portions of the first substrate layer; and

    etching the exposed portions of the first substrate layer such that a multiple-depth structure is formed.

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