Method of improving copper interconnects of semiconductor devices for bonding

• US 6,544,880 B1
• Filed: 06/14/1999
• Issued: 04/08/2003
• Est. Priority Date: 06/14/1999
• Status: Expired due to Term

• Current Assignee: Round Rock Research LLC
• Original Assignee: Micron Technology, Inc.
• Inventors: Akram, Salman
• Primary Examiner(s): Nguyen, Tuan H.
• Assistant Examiner(s): NGUYEN, THANH T
• Application Number:
  US09/332,665
• Time in Patent Office: 1,394 Days
• Field of Search: 438/612-617, 438/686-687
• US Class Current: 438/617
• CPC Class Codes: H01L 2224/02166 Collar structures
• CPC Class Codes: H01L 2224/03 Manufacturing methods
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05082 Two-layer arrangements
• CPC Class Codes: H01L 2224/05083 Three-layer arrangements
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05181 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05556 in side view
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05664 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/05666 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05681 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/29099 Material
• CPC Class Codes: H01L 2224/45015 : being circular
• CPC Class Codes: H01L 2224/45124 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45139 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/45144 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/4554 : Coating
• CPC Class Codes: H01L 2224/45669 : Platinum (Pt) as principal constituent
• CPC Class Codes: H01L 2224/48091 : Arched
• CPC Class Codes: H01L 2224/48453 : of the interface with the bonding area
• CPC Class Codes: H01L 2224/48463 : the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/48507 : comprising an intermetallic compound
• CPC Class Codes: H01L 2224/48624 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48639 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48644 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48647 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48655 : Nickel (Ni) as principal constituent
• CPC Class Codes: H01L 2224/48664 : Palladium (Pd) as principal constituent
• CPC Class Codes: H01L 2224/48666 : Titanium (Ti) as principal constituent
• CPC Class Codes: H01L 2224/48681 : Tantalum (Ta) as principal constituent
• CPC Class Codes: H01L 2224/48724 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48739 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48744 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48747 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48755 : Nickel (Ni) as principal constituent
• CPC Class Codes: H01L 2224/48764 : Palladium (Pd) as principal constituent
• CPC Class Codes: H01L 2224/48766 : Titanium (Ti) as principal constituent
• CPC Class Codes: H01L 2224/48781 : Tantalum (Ta) as principal constituent
• CPC Class Codes: H01L 2224/48824 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48839 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48844 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48847 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48855 : Nickel (Ni) as principal constituent
• CPC Class Codes: H01L 2224/48864 : Palladium (Pd) as principal constituent
• CPC Class Codes: H01L 2224/48866 : Titanium (Ti) as principal constituent
• CPC Class Codes: H01L 2224/48881 : Tantalum (Ta) as principal constituent
• CPC Class Codes: H01L 2224/78 : Apparatus for connecting with wire connectors
• CPC Class Codes: H01L 2224/85375 : having an external coating, e.g. protective bond-through coating
• CPC Class Codes: H01L 23/53238 : Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/50 : Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto thin flexible metallic tape with or without a film carrier H01L23/49572, flexible insulating substrates H01L23/4985, H01L23/5387
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 24/86 : using tape automated bonding [TAB]
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00013 : Fully indexed content
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/207 : Diameter ranges

Abstract

An improved wire bond with the pond pads of semiconductor devices and the lead fingers of lead frames or an improved conductor lead of a TAB tape bond with the bond pad of a semiconductor device. More specifically, an improved wire bond wherein the bond pad on a surface of the semiconductor device comprises a layer of copper and at least one layer of metal and/or at least a barrier layer of material between the copper layer and one layer of metal on the copper layer to form a bond pad.

Claims

1. A method of forming a semiconductor device assembly, said method comprising:

providing a substrate having an upper surface and a lower surface;

depositing a layer of copper on at least a portion of the upper surface and the lower surface of the substrate in contact therewith;

depositing at least one layer of metal on at least a portion of the layer of copper; and

patterning the layer of copper and the at least one layer of metal on one surface of the upper surface and the lower surface of the substrate to form at least one bond pad thereon.

2. The method of claim 1, further comprising:

connecting one end of a wire to the at least one layer of metal using a wire bond.

3. The method of claim 1, wherein the at least one layer of metal comprises silver metal.

4. The method of claim 1, wherein the at least one layer of metal comprises gold metal.

5. The method of claim 1, wherein the at least one layer of metal comprises a silver alloy metal.

6. The method of claim 1, wherein the at least one layer of metal comprises a gold alloy metal.

7. The method of claim 1, wherein the at least one layer of metal comprises a silver and gold alloy metal.

8. The method of claim 1, wherein the at least one layer of metal comprises palladium metal.

9. The method of claim 1, wherein the at least one layer of metal comprises a noble metal alloy.

10. The method of claim 1, wherein the at least one layer of metal comprises nickel metal.

11. The method of claim 1, wherein the at least one layer of metal comprises nickel metal alloy.

12. The method of claim 1, further comprising:

depositing at least one other layer of metal on a portion of the at least one layer of metal.

13. The method of claim 12, wherein the at least one layer of metal comprises a silver metal alloy and wherein the at least one other layer of metal comprises a nickel metal alloy.

14. The method of claim 12, wherein the at least one layer of metal comprises a nickel metal alloy and wherein the at least one other layer of metal comprises a silver metal alloy.

15. The method of claim 12, wherein the at least one layer of metal comprises silver metal and wherein the at least one other layer of metal comprises nickel metal.

16. The method of claim 12, wherein the at least one layer of metal comprises nickel metal and wherein the at least one other layer of metal comprises a silver metal.

17. The method of claim 12, wherein the at least one layer of metal comprises a barrier layer of metal and the at least one other layer of metal comprises an adhesion promoting layer of metal for wire bonding thereto.

18. The method of claim 1, wherein the layer of copper comprises a zincated copper layer.

19. The method of claim 1, further comprising:

depositing an insulative coating on a portion of the one surface of the upper surface and the lower surface of the substrate.

20. A method of forming a semiconductor device assembly, said method comprising:

providing a substrate having an upper surface and a lower surface;

depositing a layer of copper on at least a portion of the upper surface and the lower surface of the substrate in contact therewith;

patterning the layer of copper on one surface of the upper surface and the lower surface of the substrate to form at least one bond pad thereon; and

depositing at least one layer of metal on at least a portion of the layer of copper.

21. The method of claim 20, further comprising:

connecting one end of a wire to the at least one layer of metal using a wire bond.

22. The method of claim 20, wherein the at least one layer of metal comprises silver metal.

23. The method of claim 20, wherein the at least one layer of metal comprises gold metal.

24. The method of claim 20, wherein the at least one layer of metal comprises a silver alloy metal.

25. The method of claim 20, wherein the at least one layer of metal comprises a gold alloy metal.

26. The method of claim 20, wherein the at least one layer of metal comprises a silver and gold alloy metal.

27. The method of claim 20, wherein the at least one layer of metal comprises palladium metal.

28. The method of claim 20, wherein the at least one layer of metal comprises a noble metal.

29. The method of claim 20, wherein the at least one layer of metal comprises a noble metal alloy.

30. The method of claim 20, wherein the at least one layer of metal comprises nickel metal.

31. The method of claim 20, wherein the at least one layer of metal comprises nickel metal alloy.

32. The method of claim 20, further comprising:

depositing at least one other layer of metal on a portion of the at least one layer of metal.

33. The method of claim 32, wherein the at least one layer of metal comprises a silver metal alloy and wherein the at least one other layer of metal comprises a nickel metal alloy.

34. The method of claim 32, wherein the at least one layer of metal comprises a nickel metal alloy and wherein the at least one other layer of metal comprises a silver metal alloy.

35. The method of claim 32, wherein the at least one layer of metal comprises silver metal and wherein the at least one other layer of metal comprises nickel metal.

36. The method of claim 32, wherein the at least one layer of metal comprises nickel metal and wherein the at least one other layer of metal comprises a silver metal.

37. The method of claim 32, wherein the at least one layer of metal comprises a barrier layer of metal and the at least one other layer of metal comprises an adhesion promoting layer of metal for wire bonding thereto.

38. The method of claim 20, wherein the layer of copper comprises a zincated copper layer.

39. The method of claim 20, further comprising:

depositing an insulative coating on a portion of the one surface of the upper surface and the lower surface of the substrate.

40. A method of forming a semiconductor device assembly, said method comprising:

providing a substrate having an upper surface and a lower surface;

depositing a layer of copper on at least a portion of the upper surface and the lower surface of the substrate in contact therewith;

depositing a barrier layer on at least a portion of the layer of copper;

depositing at least one layer of metal on at least a portion of the barrier layer; and

patterning the layer of copper, the barrier layer and the at least one layer of metal on one surface of the upper surface and the lower surface of the substrate to form at least one bond pad thereon.

41. The method of claim 40, further comprising:

connecting one end of a wire to the at least one layer of metal using a wire bond.

42. The method of claim 40, further comprising:

connecting one end of conduct lead of a TAB tape to the at least one layer of gold metal using a wire bond.

43. A method of forming a semiconductor device assembly, said method comprising:

providing a substrate having an upper surface and a lower surface;

depositing a layer of copper on at least a portion of the upper surface and the lower surface of the substrate in contact therewith;

patterning the layer of copper on one surface of the upper surface and the lower surface of the substrate to form at least one bond pad thereon;

depositing at least one layer of metal on at least a portion of the layer of copper; and

connecting one end of a conductor to the at least one layer of metal.

44. A method of forming a semiconductor device assembly, said method comprising:

providing a substrate having an upper surface and a lower surface;

depositing a layer of copper on at least a portion of the upper surface and the lower surface of the substrate in contact therewith;

depositing a barrier layer on at least a portion of the layer of copper;

depositing at least one layer of gold metal on at least a portion of the barrier layer; and

patterning the layer of copper, the barrier layer and the at least one layer of gold metal on one surface of the upper surface and the lower surface of the substrate to form at least one bond pad thereon.

45. A method of forming a semiconductor device assembly, said method comprising:

providing a substrate having an upper surface and a lower surface;

depositing a layer of copper on at least a portion of the upper surface and the lower surface of the substrate in contact therewith;

patterning the layer of copper on one surface of the upper surface and the lower surface of the substrate to form at least one bond pad thereon;

depositing at least one layer of gold metal on at least a portion of the layer of copper; and

connecting one end of a gold metal conductor to the at least one layer of gold metal.

46. A method of forming a semiconductor device assembly, said method comprising:

providing a substrate having an upper surface and a lower surface;

depositing a layer of copper on at least a portion of the upper surface and the lower surface of the substrate in contact therewith;

patterning the layer of copper on one surface of the upper surface and the lower surface of the substrate to form at least one bond pad thereon;

depositing at least one layer of metal on at least a portion of the layer of copper; and

connecting one end of a conductor to the layer of copper of the at least one bond pad.