Method for dry cleaning metal etching chamber
First Claim
1. A method for dry cleaning a process chamber, said method comprising:
- introducing a mixture of oxygen and chlorine cleaning process gas into said processing chamber;
forming a plasma from said mixture of oxygen and chlorine cleaning process gas; and
maintaining said plasma for a time period.
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Accused Products
Abstract
In accordance with the present invention, a method is provided for dry cleaning a processing chamber. This method comprises the step of introducing a first cleaning process gas into the processing chamber. A plasma is formed from the first cleaning process gas and maintained for a first time period. Next, repeating the step of introducing the cleaning process gas, a second cleaning process gas is introduced into the processing chamber and maintained the plasma for a second time period. As a result, the present invention is capable of removing polymer built up on the processing chamber'"'"'s interior surfaces to achieve a high yield and maintaining throughput of the substrates in the plasma processing system.
8 Citations
21 Claims
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1. A method for dry cleaning a process chamber, said method comprising:
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introducing a mixture of oxygen and chlorine cleaning process gas into said processing chamber;
forming a plasma from said mixture of oxygen and chlorine cleaning process gas; and
maintaining said plasma for a time period. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for dry cleaning a processing chamber, said method comprising:
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introducing an oxygen cleaning process gas into said processing chamber;
forming an oxygen plasma from said oxygen cleaning process gas;
maintaining said oxygen plasma for a first time period;
introducing a chlorine cleaning process gas into said processing chamber; and
maintaining said oxygen plasma for a second time period. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for dry cleaning a metal etching chamber, said method comprising:
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introducing an oxygen cleaning process gas with a flow rate of about 230 SCCM (standard cubic centimeter per minute) into said metal etching chamber, wherein said metal etching chamber has a first electrode and a second electrode;
performing an RF energy to said oxygen cleaning process gas to generate an oxygen plasma;
maintaining said oxygen plasma for a first time period of about 12 second to remove a photoresist based polymer on the interior surface of said metal etching chamber;
introducing a chlorine cleaning process gas with said flow rate of about 160 SCCM (standard cubic centimeters per minute) into said metal etching chamber; and
maintaining said oxygen plasma for a second time period of about 10 second to remove a metal based polymer on said interior surface of said metal etching chamber. - View Dependent Claims (19, 20, 21)
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Specification