Metal nitride barrier layer and electroplating seed layer with the same metal as the metal nitride layer

• US 6,545,357 B2
• Filed: 05/09/2001
• Issued: 04/08/2003
• Est. Priority Date: 08/27/1999
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Chopra, Dinesh
• Primary Examiner(s): Whitehead, Jr., Carl
• Assistant Examiner(s): Lewis, Monica
• Application Number:
  US09/853,451
• Publication Number:
  US 20020030274A1
• Time in Patent Office: 699 Days
• Field of Search: 257/486, 257/740, 257/751, 257/767, 257/438, 257/750, 257/758
• US Class Current: 257/751
• CPC Class Codes: H01L 21/2885 using an external electrical current, i.e. electro-deposition
• CPC Class Codes: H01L 21/76846 Layer combinations
• CPC Class Codes: H01L 21/76873 for electroplating
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A barrier layer material and method of forming the same is disclosed. The method includes depositing a graded metal nitride layer in a single deposition chamber, with a high nitrogen content at a lower surface and a high metal content at an upper surface. In the illustrated embodiment, a metal nitride with a 1:1 nitrogen-to-metal ratio is initially deposited into a deep void, such as a via or trench, by reactive sputtering of a metal target in nitrogen atmosphere. After an initial thickness is deposited, flow of nitrogen source gas is reduced and sputtering continues, producing a metal nitride with a graded nitrogen content. After the nitrogen is stopped, deposition continues, resulting in a substantially pure metal top layer. This three-stage layer includes a highly conductive top layer, upon which copper can be directly electroplated without a separate seed layer deposition. Advantageously, native oxide on the top metal surface can be cleaned in situ by reversing polarity in the electroplating solution just prior to plating.

Claims

1. A protective barrier layer interposed between a highly conducting metallic element in an integrated circuit and an interlevel dielectric, the barrier layer comprising a metallic nitride sub-layer having a nitrogen content graded generally linearly from a first concentration adjacent to the interlevel dielectric to about zero adjacent to the metallic element.

2. The barrier layer of claim 1, wherein the first concentration is defined by a metal-to-nitrogen ratio of at least about 1:

2.

3. The barrier layer of claim 2, wherein the first concentration is defined by a metal-to-nitrogen ratio of about 1:

1.

4. The barrier layer of claim 1, wherein the metallic nitride sub-layer is tungsten nitride.

5. The barrier layer of claim 1, wherein the metallic nitride sub-layer comprises a ternary compound including silicon.

6. The barrier layer of claim 1, further comprising an initial sub-layer interposed between the metallic nitride sub-layer and the interlevel dielectric, the initial sub-layer having a metal-to-nitrogen ratio of about 1:

1.

7. The barrier layer of claim 1, further comprising a seed sub-layer interposed between the metallic nitride sub-layer and the highly conductive layer, the seed sub-layer comprising the same metal species as the metallic nitride sub-layer and having a substantially nitrogen-free composition.

8. The barrier layer of claim 7, wherein the seed sub-layer has a thickness of at least about 25 Å

.

9. The barrier layer of claim 1, wherein the highly conductive layer comprises a copper layer.

10. The barrier layer of claim 1, wherein the barrier layer comprises:

a tungsten nitride sub-layer adjacent to the interlevel dielectric, having a nitrogen-to metal ratio of about 1;

1;

a graded tungsten nitride sub-layer adjacent to the tungsten nitride sub-layer, having a nitrogen-to-metal ratio ranging from about 1;

1 to about 0;

1; and

a substantially pure tungsten sub-layer adjacent to the graded tungsten nitride sub-layer.

11. A protective barrier layer interposed between a highly conducting metallic element in an integrated circuit and an interlevel dielectric, the barrier layer comprising a metallic nitride sub-layer having a nitrogen content graded generally in a plurality of steps from a first concentration adjacent to the interlevel dielectric to about zero adjacent to the metallic element.

12. A protective barrier layer interposed between a highly conducting metallic element in an integrated circuit and an interlevel dielectric, the barrier layer comprising a metallic nitride sub-layer having a metal content graded in a generally exponential manner from a first concentration adjacent to the interlevel dielectric to a much higher concentration adjacent to the metallic element.

13. An integrated circuit comprising a wiring structure within an opening formed in an insulating layer, the wiring structure comprising:

a barrier portion including a first metal nitride sub-layer and a second metal nitride sub-layer contacting the first metal nitride;

a metal seed layer directly overlying the second metal nitride sub-layer of the barrier portion, the metal seed layer comprising the same metal as the metal nitride sub-layer, wherein the second metal nitride sub-layer has a nitrogen content varying generally linearly or in a plurality of steps from a first concentration at the first metal nitride sub-layer to the metal seed layer having substantially zero nitrogen content; and

a copper layer directly overlying the metal seed layer.

14. The integrated circuit of claim 13, wherein the second metal nitride sub-layer has a nitrogen-to-metal ratio varying between at most about 2:

1 adjacent to the first metal nitride sub-layer and about zero adjacent to the metal seed layer.

15. The integrated circuit of claim 14, wherein the first metal nitride sub-layer has a nitrogen-to-metal ratio of about 1:

1.

16. The integrated circuit of claim 13, wherein the first metal nitride sub-layer has a thickness between about 25 Å

and 125 Å

as measured along the sidewalls of the opening.

17. The integrated circuit of claim 13, wherein the first and second metal nitride sub-layers have a thickness between about 200 Å

and 300 Å

over upper surfaces of the insulating layer.

18. The integrated circuit of claim 13, wherein the metal seed layer is substantially pure tungsten.

19. The integrated circuit of claim 18, wherein the metal seed layer has a thickness between about 50 Å

and 100 Å

over sidewalls of the opening.

20. The integrated circuit of claim 19, wherein the metal seed layer has a thickness between about 300 Å

and 2,000 Å

over upper surfaces of the insulating layer.

21. The integrated circuit of claim 13, wherein the opening has an aspect ratio greater than about 1:

1.

22. The integrated circuit of claim 13, wherein the opening has an aspect ratio between about 3:

1 and 4;

1.