Monolithic series/parallel led arrays formed on highly resistive substrates
DCFirst Claim
1. An array of light emitting devices formed on a highly resistive substrate, the array comprising:
- a first light emitting device, comprising;
a first n-type layer overlying a first portion of the substrate;
a first active region overlying the first n-type layer;
a first p-type layer overlying the first active region;
a first n-contact connected to the first n-type layer;
a first p-contact connected to the first p-type layer, wherein the first n-contact and the first p-contact are formed on the same side of the device;
a second light emitting device, comprising;
a second n-type layer overlying a second portion of the substrate;
a second active region overlying the second n-type layer;
a second p-type layer overlying the second active region;
a second n-contact connected to the second n-type layer;
a second p-contact connected to the second p-type layer, wherein the second n-contact and the second p-contact are formed on the same side of the device;
one of a trench and an ion implanted region separating the first light emitting device and the second light emitting device; and
a first interconnect connecting one of the first n- and first p-contacts to one of the second n- and second p-contacts.
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Reexamination
Accused Products
Abstract
Series or parallel LED arrays are formed on a highly resistive substrate, such that both the p- and n-contacts for the array are on the same side of the array. The individual LEDs are electrically isolated from each other by trenches or by ion implantation. Interconnects deposited on the array connects the contacts of the individual LEDs in the array. In some embodiments, the LEDs are III-nitride devices formed on sapphire substrates. In one embodiment, two LEDs formed on a single substrate are connected in antiparallel to form a monolithic electrostatic discharge protection circuit. In one embodiment, multiple LEDs formed on a single substrate are connected in series . In one embodiment, multiple LEDs formed on a single substrate are connected in parallel. In some embodiments, a layer of phosphor covers a portion of the substrate on which one or more individual LEDs is formed.
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Citations
24 Claims
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1. An array of light emitting devices formed on a highly resistive substrate, the array comprising:
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a first light emitting device, comprising;
a first n-type layer overlying a first portion of the substrate;
a first active region overlying the first n-type layer;
a first p-type layer overlying the first active region;
a first n-contact connected to the first n-type layer;
a first p-contact connected to the first p-type layer, wherein the first n-contact and the first p-contact are formed on the same side of the device;
a second light emitting device, comprising;
a second n-type layer overlying a second portion of the substrate;
a second active region overlying the second n-type layer;
a second p-type layer overlying the second active region;
a second n-contact connected to the second n-type layer;
a second p-contact connected to the second p-type layer, wherein the second n-contact and the second p-contact are formed on the same side of the device;
one of a trench and an ion implanted region separating the first light emitting device and the second light emitting device; and
a first interconnect connecting one of the first n- and first p-contacts to one of the second n- and second p-contacts. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 20, 21, 22, 23)
a third light emitting device, comprising;
a third n-type layer overlying a third portion of the substrate;
a third active region overlying the third n-type layer;
a third p-type layer overlying the third active region;
a third n-contact connected to the third n-type layer;
a third p-contact connected to the third p-type layer, wherein the third n-contact and the third p-contact are formed on the same side of the device;
a fourth light emitting device, comprising;
a fourth n-type layer overlying a fourth portion of the substrate;
a fourth active region overlying the fourth n-type layer;
a fourth p-type layer overlying the fourth active region;
a fourth n-contact connected to the fourth n-type layer;
a fourth p-contact connected to the fourth p-type layer, wherein the fourth n-contact and the fourth p-contact are formed on the same side of the device;
a second interconnect connecting the first n-contact to the third p-contact;
a third interconnect connecting the second n-contact to the fourth p-contact; and
a fourth interconnect connecting the third n-contact to the fourth n-contact;
wherein said one of a trench and an ion implanted region separates each of the first, second, third, and fourth light emitting devices from each other; and
wherein said first interconnect connects the first p-contact to the second p-contact.
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20. The array of claim 1 wherein the first interconnect overlies the trench or ion implanted region.
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21. The array of claim 1 wherein the array is a monolithic structure.
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22. The array of claim 21 wherein the first interconnect is part of the monolithic structure.
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23. The array of claim 1 further comprising a layer of phosphor coating a surface of the substrate opposite the first and second light emitting devices, wherein, after conversion by the phosphor coating, each of the first and second light emitting device emits substantially the same color light.
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11. An array of III-nitride light emitting devices formed on an highly resistive substrate, the array comprising:
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a layer of a first conductivity type overlying the substrate;
a plurality of active regions overlying the layer of first conductivity type, such that an area underlying each active region in the plurality is surrounded by a portion of the layer of first conductivity type and portions of the layer of first conductivity type interpose areas underlying each active region in the plurality of active regions;
a plurality of layers of second conductivity type, overlying the plurality of active regions;
a first contact connected to the layer of first conductivity type; and
a plurality of second contacts connected to the plurality of layers of second conductivity type. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 24)
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Specification