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Method for etching low k dielectrics

  • US 6,547,977 B1
  • Filed: 07/05/2000
  • Issued: 04/15/2003
  • Est. Priority Date: 04/02/1998
  • Status: Expired due to Fees
First Claim
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1. A method for selectively plasma etching an opening into a low k dielectric material to produce a cavity useful in forming a conductive interconnect structure, said method comprising:

  • selectively etching a low k dielectric material relative to an adjacent oxide or nitride or combination thereof, by contacting said low k dielectric material with a plasma generated from a plasma source gas comprising oxygen and a halogen-comprising gas where said halogen is not fluorine, and wherein an etch selectivity is at least 10;

    1 for said low k dielectric material relative to said adjacent oxide or nitride or combination thereof.

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