Method of producing and depositing a metal film
First Claim
1. A method of laying down a metal on a substrate installed in or forming part of an electronic device comprising:
- depositing a metal precursor comprising a metallic salt directly on a substrate installed in or forming part of an electronic device;
adding an energy derived from an extended source;
reducing the metal precursor and precipitating metal on the substrate installed in or forming part of an electronic device as a continuous metal layer, wherein the step of reducing the metal precursor occurs at a temperature less than about 150°
C. and the continuous layer is an electrical conductor; and
selecting the metal precursor and the energy such that the continuous layer is an electrical conductor and comprises at least 85% of the metal wherein the metal comprises an element where a highest d orbital occupied by an electron of the element is the 3d, 5d, or 6d.
2 Assignments
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Accused Products
Abstract
Methods and apparatus are provided in which a metal precursor is formed in a process that includes the following steps: depositing a metal precursor on a substrate; adding an energy to reduce the metal precursor and to precipitate metal on the substrate as a continuous metal layer; and selecting the metal precursor and the energy such that the purity of the continuous metal layer is greater than 85%, and/or the deposited layer has an electrical conductivity substantially that of a pure metal. Methods and apparatus are also provided in which a metal is deposited onto a substrate by a process which includes the following steps: depositing the metal precursor onto the substrate in a desired pattern; and applying sufficient energy to decompose the precursor to precipitate metal in a continuous metal layer in the desired pattern.
89 Citations
16 Claims
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1. A method of laying down a metal on a substrate installed in or forming part of an electronic device comprising:
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depositing a metal precursor comprising a metallic salt directly on a substrate installed in or forming part of an electronic device;
adding an energy derived from an extended source;
reducing the metal precursor and precipitating metal on the substrate installed in or forming part of an electronic device as a continuous metal layer, wherein the step of reducing the metal precursor occurs at a temperature less than about 150°
C. and the continuous layer is an electrical conductor; and
selecting the metal precursor and the energy such that the continuous layer is an electrical conductor and comprises at least 85% of the metal wherein the metal comprises an element where a highest d orbital occupied by an electron of the element is the 3d, 5d, or 6d. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of depositing a metal in a desired pattern onto a substrate installed in or forming part of an electronic device by:
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depositing a metal precursor directly onto the substrate installed in or forming part of an electronic device in the desired pattern, wherein the metal precursor comprises a metallic salt;
applying sufficient energy to the metal precursor in the form of an extended source;
reducing the metal precursor, wherein the step of reducing the metal precursor occurs at a temperature less than about 150°
C.; and
precipitating a metal in the desired pattern, said layer having an electrical conductivity substantially that of the pure metal wherein the metal comprises an element where a highest d orbital occupied by an electron of the element is the 3d, 5d, or 6d. - View Dependent Claims (12, 13, 14, 15, 16)
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Specification