Photoelectric conversion element and method for manufacturing the same

• US 6,548,317 B2
• Filed: 08/09/2001
• Issued: 04/15/2003
• Est. Priority Date: 05/08/1998
• Status: Expired due to Term

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Ueno, Noriko, Okano, Nobukata, Taniguchi, Takehiro, Narui, Hironobu
• Primary Examiner(s): DANG, TRUNG Q
• Application Number:
  US09/925,574
• Publication Number:
  US 20010049152A1
• Time in Patent Office: 614 Days
• Field of Search: 438/25, 438/26, 438/31, 438/39, 438/46
• US Class Current: 438/25
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01S 5/0202 Cleaving
• CPC Class Codes: H01S 5/0234 Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
• CPC Class Codes: H01S 5/02345 Wire-bonding
• CPC Class Codes: H01S 5/0237 by soldering
• CPC Class Codes: H01S 5/02375 Positioning of the laser chips
• CPC Class Codes: H01S 5/04256 characterised by the configuration
• CPC Class Codes: H01S 5/2205 comprising special burying or current confinement layers
• CPC Class Codes: H01S 5/227 Buried mesa structure ; Striped active layer
• CPC Class Codes: H01S 5/4031 Edge-emitting structures

Abstract

The purpose of the invention is to provide a photoelectric conversion element enable to ensure the connection of the contact electrode easily and accurately.

The plurality of the laser oscillator in which a semiconductor layer and the p-side electrode are laminated are formed on the same substrate. Each contact electrode formed on the base substrate through each opening of the insulating layer is electrically connected to each p-side electrode. Each opening corresponding to each laser oscillator placed side by side is formed in a staggered configuration in the alignment direction. Each contact electrode is extended in parallel with the alignment direction corresponding to each opening. Accordingly, the space between each opening and the space between each contact electrode which are placed side by side in the alignment direction are widened and the requirement for highly accurate position matching is eliminated. Therefore, each p-side electrode and each contact electrode can be connected easily and accurately.

Claims

1. A method of manufacturing a photoelectric element comprising the steps of:

forming a photoelectric conversion portion having a semiconductor layer equipped on a substrate and an electrode equipped on the semiconductor layer;

forming an insulating layer having an opening for the electrode of the photoelectric conversion portion;

forming a contact electrode electrically connected to the electrode of the photoelectric conversion portion through the opening of the insulating layer;

forming the electrode on the semiconductor layer; and

removing the semiconductor layer selectively by using the electrode as a mask.

7. The method of manufacturing the photoelectric element of claim 1, comprising the steps of:

forming a position matching portion for connecting an electrode of the photoelectric conversion portion and the contact electrode;

connecting the contact electrode to the electrode of the photoelectric conversion portion electrically by using the position matching portion;

forming a plurality of the photoelectric conversion portion on the same substrate;

forming a plurality of openings at the insulating layer corresponding to each photoelectric conversion portion, wherein the each opening is positioned within each area which aligns in a slanting direction or aligns longitudinally or laterally with more than one area of space in between the areas the openings are positioned, and

forming a plurality of contact electrodes, respectively, corresponding to each photoelectric conversion portion.

8. The method of manufacturing the photoelectric element of claim 7, further comprising the steps of:

forming a substrate side position matching portion having a metallic layer;

connecting the metallic layer to the contact electrode;

forming the contact electrode on a base, and

connecting the contact electrode to an electrode of the photoelectric conversion portion electrically.

10. The method of manufacturing a photoelectric conversion element of claim 7, further comprising the steps of:

forming the substrate side position matching portion having a metallic layer, and

connecting the metallic layer to the contact electrode.

11. The method of manufacturing a photoelectric conversion element of claim 7, further comprising the steps of:

forming the contact electrode on a base, and

connecting the contact electrode to the electrode of the photoelectric conversion portion electrically.

2. A method for manufacturing a photoelectric conversion element, comprising the steps of:

forming a photoelectric conversion portion having a semiconductor layer equipped on a substrate and an electrode equipped on the semiconductor layer;

forming an insulating layer having an opening for the electrode of the photoelectric conversion portion;

forming a contact electrode electrically connected to the electrode of the photoelectric conversion portion through the opening of the insulating layer;

forming a plurality of the photoelectric conversion portion on the same substrate;

forming a plurality of openings at the insulating layer corresponding to each photoelectric conversion portion, wherein the each opening is positioned within each area which aligns in a slanting direction or aligns longitudinally or laterally with more than one area of space in between the areas the openings are positioned, and

forming a plurality of contact electrodes, respectively, corresponding to each photoelectric conversion portion.

3. A method for manufacturing a photoelectric conversion element comprising steps of:

forming a photoelectric conversion portion having a semiconductor layer equipped on a substrate and an electrode equipped on the semiconductor layer;

forming an insulating layer having an opening for the electrode of the photoelectric conversion portion;

forming a contact electrode electrically connected to the electrode of the photoelectric conversion portion through the opening of the insulating layer;

forming a position matching portion for connecting an electrode of the photoelectric conversion portion and the contact electrode; and

connecting the contact electrode to the electrode of the photoelectric conversion portion electrically by using the position matching portion.

4. A method for manufacturing a photoelectric conversion element comprising the steps of:

forming a photoelectric conversion portion having a semiconductor layer equipped on a substrate and an electrode equipped on the semiconductor layer;

forming an insulating layer having an opening for the electrode of the photoelectric conversion portion;

forming a contact electrode electrically connected to the electrode of the photoelectric conversion portion through the opening of the insulating layer;

forming a substrate side position matching portion having a metallic layer; and

connecting the metallic layer to the contact electrode.

9. The method of manufacturing a photoelectric conversion element of claim 4, further comprising the steps of:

forming a position matching portion for connecting an electrode of the photoelectric conversion portion and the contact electrode; and

connecting the contact electrode to the electrode of the photoelectric conversion portion electrically by using the position matching portion.

14. The method of manufacturing a photoelectric conversion element of claim 4, further comprising the steps of:

forming the contact electrode on a base, and

connecting the contact electrode to the electrode of the photoelectric conversion portion electrically.

5. A method for manufacturing a photoelectric conversion element comprising the steps of:

forming a photoelectric conversion portion having a semiconductor layer equipped on a substrate and an electrode equipped on the semiconductor layer;

forming an insulating layer having an opening for the electrode of the photoelectric conversion portion; and

forming a contact electrode electrically connected to the electrode of the photoelectric conversion portion through the opening of the insulating layer;

forming the contact electrode on a base, and

connecting the contact electrode to the electrode of the photoelectric conversion portion electrically.

12. The method of manufacturing a photoelectric conversion element of claim 5, further comprising the steps of:

forming a position matching portion for connecting an electrode of the photoelectric conversion portion and the contact electrode; and

connecting the contact electrode to the electrode of the photoelectric conversion portion electrically by using the position matching portion.

13. The method of manufacturing a photoelectric conversion element of claim 5, further comprising the steps of:

forming the substrate side position matching portion having a metallic layer, and

connecting the metallic layer to the contact electrode.

15. The method of manufacturing a photoelectric conversion element of claim 5, further comprising the steps of:

forming the substrate side position matching portion having a metallic layer, and

connecting the metallic layer to the contact electrode.

6. A method of manufacturing a photoelectric element, comprising the steps of:

forming a photoelectric conversion portion having a semiconductor layer equipped on a substrate and an electrode equipped on the semiconductor layer;

forming an insulating layer having an opening for the electrode of the photoelectric conversion portion;

forming a contact electrode electrically connected to the electrode of the photoelectric conversion portion through the opening of the insulating layer;

forming the electrode on the semiconductor layer;

removing the semiconductor layer selectively by using the electrode as a mask;

forming a plurality of the photoelectric conversion portion on the same substrate;

forming a plurality of openings at the insulating layer corresponding to each photoelectric conversion portion, wherein the each opening is positioned within each area which aligns in a slanting direction or aligns longitudinally or laterally with more than one area of space in between the areas the openings are positioned;

forming a plurality of contact electrodes, respectively, corresponding to each photoelectric conversion portion;

forming a position matching portion for connecting the electrode of the photoelectric conversion portion and the contact electrode;

connecting the contact electrode to the electrode of the photoelectric conversion portion electrically by using the position matching portion;

forming a substrate side position matching portion having a metallic layer;

connecting the metallic layer to the contact electrode;

forming the contact electrode on a base; and

connecting the contact electrode to the electrode of the photoelectric conversion portion electrically.