Methods, complexes and system for forming metal-containing films

• US 6,548,683 B1
• Filed: 07/14/2000
• Issued: 04/15/2003
• Est. Priority Date: 10/02/1996
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Vaartstra, Brian A.
• Primary Examiner(s): NAZARIO GONZALEZ, PORFIRIO
• Application Number:
  US09/616,169
• Time in Patent Office: 1,005 Days
• Field of Search: 556/1, 556/176, 427/248.1, 438/681, 118/715
• US Class Current: 556/1
• CPC Class Codes: C07F 5/00 Compounds containing elements of Groups 3 or 13 of the Periodic Table
• CPC Class Codes: C07F 5/065 compounds with an Al-H linkage
• CPC Class Codes: C07F 5/066 compounds with Al linked to an element other than Al, C, H or halogen (this includes Al-cyanide linkage)
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/301 AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material

Abstract

A method of forming a film on a substrate using Group IIIA metal complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.

Claims

1. A composition comprising one or more hydride complexes of the formulas:

and

wherein;

M is a Group IIIA metal;

each R¹, R², R³, R⁴, and R⁵ group is independently H or a (C₁-C₃₀)organic group,

wherein none of the R groups are joined together to form ring systems, at least one of R³ and R⁴ is H, and R⁵ is H; and

n=1 to 6.

2. The composition of claim 1 wherein M is selected from the group consisting of Al, Ga, and In.

3. The composition of claim 1 wherein each R¹, R² , R³, R⁴, and R⁵ group is independently H or a (C₁-C₂₀)organic group.

4. The composition of claim 1 wherein each R¹, R², R³, R⁴, and R⁵ group is independently H or a (C₁-C₈)organic group.

5. The composition of claim 1 wherein each R¹, R², R³, R⁴, and R⁵ group is independently H or a (C₁-C₄)alkyl moiety.

6. The composition of claim 1 wherein the composition is a liquid.

7. The composition of claim 6 wherein the liquid composition comprises one or more solid complexes dissolved in a liquid medium.

8. The composition of claim 1 further comprising one or more compounds containing a Group VA element.

9. The composition of claim 1 wherein M is Al.

10. The composition of claim 9 wherein R¹, R³, R⁴, and R⁵ are each H.

11. The composition of claim 9 wherein each R² is methyl.

12. The composition of claim 9 wherein n=3.

13. The composition of claim 1 wherein M is Ga.

14. The composition of claim 13 wherein R¹, R³, and R⁵ are each H.

15. The composition of claim 13 wherein R⁴ and each R² are methyl.

16. The composition of claim 13 wherein n=3.

17. The composition of claim 1 wherein M is In.

18. The composition of claim 17 wherein R¹, R³, and R⁵ are each H.

19. The composition of claim 17 wherein R⁴ and each R² are methyl.

20. The composition of claim 17 wherein n=3.