Methods, complexes and system for forming metal-containing films
First Claim
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1. A composition comprising one or more hydride complexes of the formulas:
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and wherein;
M is a Group IIIA metal;
each R1, R2, R3, R4, and R5 group is independently H or a (C1-C30)organic group, wherein none of the R groups are joined together to form ring systems, at least one of R3 and R4 is H, and R5 is H; and
n=1 to 6.
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Abstract
A method of forming a film on a substrate using Group IIIA metal complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
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Citations
20 Claims
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1. A composition comprising one or more hydride complexes of the formulas:
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and wherein; M is a Group IIIA metal;
each R1, R2, R3, R4, and R5 group is independently H or a (C1-C30)organic group, wherein none of the R groups are joined together to form ring systems, at least one of R3 and R4 is H, and R5 is H; and
n=1 to 6. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification