Transmission electron microscope apparatus with equipment for inspecting defects in specimen and method of inspecting defects in specimen using transmission electron microscope
First Claim
Patent Images
1. A transmission electron microscope apparatus including an electrostatic lens that applies an accelerating voltage to an electron beam generated from an electron source, a specimen stage holding a specimen, a condenser lens and an objective lens provided so that said electron beam is focused on said specimen, a projection lens that enlarges the transmission image obtained by passing said electron beam through said specimen, an image acquisition apparatus that detects said enlarged transmission image, said transmission electron microscope apparatus comprising:
- a setting device for setting a plurality of inclination conditions of said electron beam being irradiated on said specimen with different desired deflecting angles (α
, θ
) representing a combination of an angle of incidence α and
an orientation angle θ
;
a deflection coil for sequentially deflecting said electron beam which is irradiated with said different desired deflecting angles (α
, θ
) according to said inclination conditions; and
a shift coil for shifting said electron beam deflected by said deflection coil so as to automatically focus said electron beam on substantially a same position on said image acquisition apparatus;
wherein a good or no good condition of said specimen is inspected by comparing an output of said image acquisition apparatus with a reference image previously stored.
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Accused Products
Abstract
In order to detect automatically at a high speed and a high probability rate the crystal defects and shape abnormalities in a specimen over a wide area of said specimen, a transmission electron microscope apparatus is employed which has an electron source, a first electrostatic lens, a second electrostatic lens, a third electrostatic lens, a first condenser lens, a second condenser lens, a pre-field objective lens, a deflection coil, a first projection lens, a second projection lens, a third projection lens, a first image shift coil, a second image shift coil, and an image acquisition apparatus, etc. The detection of crystal defects is made definite by observing the specimen image at the same location by multiple variations of the electron beam incidence direction using the deflection coil. In addition, the crystal defects are detected at a high speed by linking the deflection ratios of the deflection coil and of the first image shift coil and the second image shift coil, and carrying out compensation so that image shifts on the image acquisition apparatus due to the multiple electron beam incidence directions are mutually cancelled.
35 Citations
7 Claims
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1. A transmission electron microscope apparatus including an electrostatic lens that applies an accelerating voltage to an electron beam generated from an electron source, a specimen stage holding a specimen, a condenser lens and an objective lens provided so that said electron beam is focused on said specimen, a projection lens that enlarges the transmission image obtained by passing said electron beam through said specimen, an image acquisition apparatus that detects said enlarged transmission image, said transmission electron microscope apparatus comprising:
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a setting device for setting a plurality of inclination conditions of said electron beam being irradiated on said specimen with different desired deflecting angles (α
, θ
) representing a combination of an angle of incidence α and
an orientation angle θ
;
a deflection coil for sequentially deflecting said electron beam which is irradiated with said different desired deflecting angles (α
, θ
) according to said inclination conditions; and
a shift coil for shifting said electron beam deflected by said deflection coil so as to automatically focus said electron beam on substantially a same position on said image acquisition apparatus;
wherein a good or no good condition of said specimen is inspected by comparing an output of said image acquisition apparatus with a reference image previously stored. - View Dependent Claims (2, 3)
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4. A transmission electron microscope apparatus including an electrostatic lens that applies an accelerating voltage to an electron beam generated from an electron source, a specimen stage holding the specimen, a condenser lens and an objective lens provided so that said electron beam is focused on said specimen, a projection lens that enlarges the transmission image obtained by passing said electron beam through said specimen, an image acquisition apparatus that detects said enlarged transmission image, said transmission electron microscope apparatus comprising:
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a setting device for setting a plurality of inclination conditions of said electron beam being irradiated on said specimen with different desired deflecting angles (α
, θ
) representing a combination of an angle of incidence α and
an orientation angle θ
;
a deflection coil for sequentially deflecting said electron beam which is irradiated with said different desired deflecting angles (α
, θ
) according to said inclination conditions, said deflection coil being provided between said specimen stage and said projection lens; and
a shift coil for shifting said electron beam deflected by said deflection coil so as to automatically focus said electron beam on substantially a same position on said image acquisition apparatus;
wherein a good or no good condition of said specimen is inspected by comparing an output of said image acquisition apparatus with a reference image previously stored. - View Dependent Claims (5)
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6. A method of inspecting a semiconductor specimen using a transmission electron microscope apparatus, said method comprising the steps of:
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setting a plurality of inclination conditions of an electron beam being irradiated on said specimen with different desired deflecting angles (α
, θ
) representing a combination of an angle of incidence α and
an orientation angle θ
;
sequentially deflecting said electron beam which is irradiated with said different desired deflecting angles (α
, θ
) according to said inclination conditions; and
shifting said electron beam deflected by said deflection coil so as to automatically focus said electron beam on substantially a same position on an image acquisition apparatus for detecting an image of said electron beam;
wherein a good or no good condition of said specimen is inspected by comparing an output of said image acquisition apparatus with a reference image previously stored.
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7. A method of detecting defects in a specimen using a transmission electron microscope apparatus in which there is an electrostatic lens that applies an accelerating voltage to an electron beam generated from an electron source, a condenser lens and an objective lens provided so that said electron beam is focussed on said specimen, a projection lens that enlarges the transmission image obtained by passing said electron beam through said specimen, an image acquisition apparatus that detects said electron beam that has passed through said specimen, and a display apparatus that displays the image of said specimen based on the output from said image acquisition apparatus, said method comprising the steps of:
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setting a plurality of inclination conditions of said electron beam being irradiated on said specimen with different desired deflecting angles (α
, θ
) representing a combination of an angle of incidence α and
an orientation angle θ
;
sequentially deflecting said electron beam which is irradiated with different multiple deflection angles (α
, θ
) representing a combination of an angle of incidence α and
an orientation angle θ
;
shifting back said electron beam with a shift coil according to said different multiple deflection angles (α
, θ
) so as to automatically focus said electron beam on substantially a same position on said image acquisition apparatus; and
displaying on said display apparatus the image of said specimen based on the output of said image acquisition apparatus obtained by irradiating said specimen with said electron beam at said different multiple deflection angles (α
, θ
).
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Specification
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Current AssigneeHitachi, Ltd.
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Original AssigneeHitachi, Ltd.
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InventorsNakamura, Kuniyasu, Kakibayashi, Hiroshi
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Primary Examiner(s)Lee, John R.
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Assistant Examiner(s)QUASH, ANTHONY G
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Application NumberUS09/504,044Time in Patent Office1,156 DaysField of Search250/306, 250/307, 250/308, 250/311, 250/363.02, 250/363.04, 250/396.RUS Class Current250/311CPC Class CodesH01J 2237/1506 Tilting or rocking beam aro...H01J 37/26 Electron or ion microscopes...H01J 37/295 Electron or ion diffraction...
