Monolithic temperature compensation scheme for field effect transistor integrated circuits

• US 6,548,840 B1
• Filed: 04/03/2000
• Issued: 04/15/2003
• Est. Priority Date: 04/03/2000
• Status: Expired due to Fees

• Current Assignee: HRL Laboratories LLC (The Boeing Co.)
• Original Assignee: HRL Laboratories LLC (The Boeing Co.)
• Inventors: Matloubian, Mehran M., Pobanz, Carl W.
• Primary Examiner(s): Wilson, Allan R.
• Application Number:
  US09/542,241
• Time in Patent Office: 1,107 Days
• Field of Search: 257/252, 257/379, 257/469
• US Class Current: 257/252
• CPC Class Codes: H01L 29/8605 Resistors with PN junctions

Abstract

A method and apparatus for substantially canceling the effects of temperature on the electrical performance of Field Effect Transistor (FET) integrated circuits (IC'"'"'s) by exploiting a subtle feature of an epitaxial resistor implemented in an FET process. Specifically, the invention takes advantage of two constituent epitaxial resistor components having resistances that vary monotonically in opposite directions as functions of temperature. The invention includes a method for selecting the geometry of such an epitaxial resistor to give it either temperature invariance or a specific, useful functional temperature dependence.

Claims

1. An apparatus comprising a temperature compensating epitaxial resistor having a first resistive component and a second resistive component, wherein said first resistive component includes gallium and arsenic and includes an electrically isolated semi-conducting channel wherein said channel has:

a width and a length;

an electrical resistance functionally dependent on channel geometry; and

said second resistive component is comprised of a substantially conducting material and a plurality of ohmic contacts, wherein said ohmic contacts are functionally interfaced with said first resistive component, and wherein said second resistive component has electrical resistance that is functionally dependent on temperature and geometry and wherein said first and second resistive components have opposite, and independently adjustable, functional temperature dependences.

2. The apparatus comprising the temperature compensating epitaxial resistor of claim 1, wherein the epitaxial resistor'"'"'s electrical performance is functionally dependant on temperature, and wherein said functional dependence may be adjusted by altering the geometry of said first and second resistive components.

3. The apparatus comprising the temperature compensating epitaxial resistor of claim 1, wherein a substantially temperature invariant resistor is achieved by varying the geometry of said first and second resistive components.

4. The apparatus comprising the temperature compensating epitaxial resistor of claim 1, wherein a predefined temperature dependence for the resistor is achieved by varying the geometry of said first and second resistive components.

5. The apparatus comprising a temperature compensating epitaxial resistor of claim 1, wherein the epitaxial resistor is integrated with a field effect transistor, wherein said transistor is subject to:

a bias current;

a gate-source bias voltage; and

wherein said transistor has a threshold voltage; and

wherein said epitaxial resistor is functionally interfaced with, an active field effect transistor, and said temperature sensitive resistor is included in the bias circuit to control thermally induced parameter variations within the circuit.

6. The field effect transistor according to claim 5, wherein the bias current is kept substantially constant by virtue of said resistor adjusting the gate-source voltage to compensate for a threshold voltage shift.

7. The field effect transistor of claim 5 wherein the functional dependence of transistor parameters on temperature can be controlled by adjusting the geometry of one or both of said resistor'"'"'s components.

8. The field effect transistor of claim 5 wherein the functional dependence of temperature on performance can be optimized by adjusting the geometry of one or both of the resistive components.

9. The field effect transistor of claim 5 wherein the functional dependence of temperature on performance is substantially eliminated, by adjusting the geometry of one or both of the resistive components.

10. The field effect transistor of claim 5 wherein the resistance of the first resistive component may be optimally tailored for improved thermal compensation by altering the first resistive component'"'"'s material composition.

11. The field effect transistor of claim 5 wherein the resistance of the second resistive component may be tailored for improved performance by altering the material properties of the second resistive component.

12. A method for controlling or substantially eliminating temperature induced performance variations in field effect transistor circuits utilizing the apparatus comprising a temperature compensating epitaxial resistor of claim 1, wherein said method includes integrating a thermally compensating resistor into said field effect transistor circuits, wherein said resistor compensates for temperature induced performance variations by responding to, and compensating for, temperature induced performance variations.

13. The method for controlling or substantially eliminating the temperature induced performance variations of claim 12 wherein the geometries of one or more of the resistive components are altered to optimize the temperature compensating properties of the epitaxial resistor.

14. The method for controlling or substantially eliminating the temperature induced performance variations of claim 12 wherein the material properties of one or more of the resistive components are altered to optimize the temperature compensating properties of the epitaxial resistor.

15. An apparatus for locally measuring temperature within a circuit, wherein said apparatus comprises two or more reference resistors and two or more temperature indicating resistors, wherein said two or more reference resistors are thermally invariant;

and are configured as a bridge; and

wherein said two or more temperature indicating resistors have opposite temperature dependences; and

wherein one or more of the electrical properties of said two or more temperature indicating resistors and said two or more reference resistors are compared to provide a temperature signal.

16. The temperature measuring apparatus of claim 15, wherein when said temperature signal reaches one or more predetermined levels or ranges of levels, an output signal is generated.

17. The temperature measuring apparatus of claim 15, wherein when the temperature signal provides a telemetry, alarm, or feedback control function.