Semicoductor passivation using barrier coatings

• US 6,548,912 B1
• Filed: 05/15/2000
• Issued: 04/15/2003
• Est. Priority Date: 10/25/1999
• Status: Expired due to Term

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Battelle Memorial Institute
• Inventors: Shi, Ming Kun, Hall, Michael Gene, Gross, Mark Edward, Martin, Peter Maclyn, Graff, Gordon Lee, Mast, Eric Sidney
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Trinh, (Vikki) Hoa B.
• Application Number:
  US09/571,649
• Time in Patent Office: 1,065 Days
• Field of Search: 257/787, 257/40, 257/89, 257/98, 257/757, 257/758, 313/506, 313/512, 361/301.5, 361/506
• US Class Current: 257/787
• CPC Class Codes: G02F 1/133337 Layers preventing ion diffusion, e.g. by ion absorption
• CPC Class Codes: H01L 23/3192 Multilayer coating
• CPC Class Codes: H01L 23/562 Protection against mechanical damage H01L23/02, H01L23/28 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H10K 30/88 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 50/8445 multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y02E 60/10 Energy storage using batteries
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

An encapsulated microelectronic device. The device includes a semiconductor substrate, microelectronic device adjacent to the semiconductor substrate, and at least one first barrier stack adjacent to the microelectronic device. The barrier stack encapsulates the microelectronic device. It includes at least one first barrier layer and at least one first polymer layer. The encapsulated microelectronic device optionally includes at least one second barrier stack located between the semiconductor substrate and the microelectronic device. The second barrier stack includes at least one second barrier layer and at least one second polymer layer. A method for making an encapsulated microelectronic device is also disclosed.

Claims

1. An encapsulated microelectronic device comprising:

a semiconductor substrate;

a microelectronic device adjacent to the semiconductor substrate, the microelectronic device being selected from integrated circuits, charge coupled devices, metal sensor pads, micro-disk lasers, electrochromic devices, photochromic devices, microelectromechanical systems and solar cells; and

at least one first barrier stack comprising at least one first barrier layer and at least one first polymer layer, the at least one first barrier stack adjacent to the microelectronic device on a side opposite the semiconductor substrate, wherein the at least one first barrier stack encapsulates the microelectronic device.

2. The encapsulated microelectronic device of claim 1 further comprising at least one second barrier stack located between the semiconductor substrate and the microelectronic device, the at least one second barrier stack comprising at least one second barrier layer and at least one second polymer layer.

3. The encapsulated microelectronic device of claim 1 wherein the at least one first barrier layer is substantially transparent.

4. The encapsulated microelectronic device of claim 2 wherein the at least one second barrier layer is substantially transparent.

5. The encapsulated microelectronic device of claim 1 wherein at least one of the at least one first barrier layers comprises a material selected from metal oxides, metal nitrides, metal carbides, metal oxynitrides, metal oxyborides, and combinations thereof.

6. The encapsulated microelectronic device of claim 5 wherein the metal oxides are selected from silicon oxide, aluminum oxide, titanium oxide, indium oxide, tin oxide, indium tin oxide, tantalum oxide, zirconium oxide, niobium oxide, and combinations thereof.

7. The encapsulated microelectronic device of claim 5 wherein the metal nitrides are selected from aluminum nitride, silicon nitride, boron nitride, and combinations thereof.

8. The encapsulated microelectronic device of claim 5 wherein the metal oxynitrides are selected from aluminum oxynitride, silicon oxynitride, boron oxynitride, and combinations thereof.

9. The encapsulated microelectronic device of claim 1 wherein the at least one first barrier layer is substantially opaque.

10. The encapsulated microelectronic device of claim 2 wherein the at least one second barrier layer is substantially opaque.

11. The encapsulated microelectronic device of claim 1 wherein at least one of the at least one first barrier layers is selected from opaque metals, opaque polymers, opaque ceramics, and opaque cermets.

12. The encapsulated microelectronic device of claim 2 wherein at least one of the at least one second barrier layers is selected from opaque metals, opaque polymers, opaque ceramics, and opaque cermets.

13. The encapsulated microelectronic device of claim 1 wherein the semiconductor substrate comprises a flexible semiconductor substrate material.

14. The encapsulated microelectronic device of claim 1 wherein the semiconductor substrate comprises a rigid semiconductor substrate material.

15. The encapsulated microelectronic device of claim 1 wherein at least one of the at least one first polymer layers comprises an acrylate-containing polymer.

16. The encapsulated microelectronic device of claim 2 wherein at least one of the at least one second polymer layers comprises an acrylate-containing polymer.

17. The encapsulated microelectronic device of claim 1 further comprising a polymer smoothing layer adjacent to the semiconductor substrate.

18. The encapsulated microelectronic device of claim 1 further comprising a scratch resistant layer adjacent to the semiconductor substrate.

19. The encapsulated microelectronic device of claim 1 further comprising an antireflective coating.

20. The encapsulated microelectronic device of claim 1 further comprising an antifingerprint coating.

21. The encapsulated microelectronic device of claim 1 further comprising an antistatic coating.

22. The encapsulated microelectronic device of claim 1 wherein the at least one first barrier layer comprises two barrier layers.

23. The encapsulated microelectronic device of claim 22 wherein the two barrier layers are made of the same barrier material.

24. The encapsulated microelectronic device of claim 22 wherein the two barrier layers are made of different barrier materials.

25. The encapsulated microelectronic device of claim 1 wherein the oxygen transmission rate through the at least one first barrier stack is less than 0.005 cc/m²/day at 23°

C. and 0% relative humidity.

26. The encapsulated microelectronic device of claim 1 wherein the water vapor transmission rate through the at least one first barrier stack is less than 0.005 gm/m²/day at 38°

C. and 100% relative humidity.

27. The encapsulated microelectronic device of claim 1 further comprising a plastic substrate adjacent to the semiconductor substrate on a side opposite the microelectronic device.

28. The encapsulated microelectronic device of claim 27 further comprising at least one third barrier stack located between the plastic substrate and the semiconductor substrate, the at least one third barrier stack comprising at least one third barrier layer and at least one third polymer layer.

29. The encapsulated microelectronic device of claim 1 further comprising a lid adjacent to the at least one first barrier stack.

30. The encapsulated microelectronic device of claim 1 further comprising a second microelectronic device embedded in the semiconductor substrate.

37. The encapsulated microelectronic device of claim 1 wherein at least one of the at least one first barrier layers comprises a material selected from metal oxides, metal nitrides, metal carbides, metal oxynitrides, metal oxyborides, and combinations thereof.

38. The encapsulated microelectronic device of claim 37 wherein the metal oxides are selected from silicon oxide, aluminum oxide, titanium oxide, indium oxide, tin oxide, indium tin oxide, tantalum oxide, zirconium oxide, niobium oxide, and combinations thereof.

39. The encapsulated microelectronic device of claim 37 wherein the metal nitrides are selected from aluminum nitride, silicon nitride, boron nitride, and combinations thereof.

40. The encapsulated microelectronic device of claim 37 wherein the metal oxynitrides are selected from aluminum oxynitride, silicon oxynitride, boron oxynitride, and combinations thereof.

31. An encapsulated microelectronic device comprising:

at least one first barrier stack comprising at least one first barrier layer and at least one first polymer layer;

a microelectronic device adjacent to the at least one first barrier stack, the microelectronic device being selected from integrated circuits, charge coupled devices, metal sensor pads, micro-disk lasers, electrochromic devices, photochromic devices, microelectromechanical systems and solar cells; and

at least one second barrier stack comprising at least one second barrier layer and at least one second polymer layer, wherein the at least one first barrier stack and the at least one second barrier stack encapsulate the microelectronic device.

32. The encapsulated microelectronic device of claim 31 further comprising a semiconductor substrate adjacent to the at least one first barrier stack on a side opposite the microelectronic device.

33. An encapsulated microelectronic device comprising:

a semiconductor substrate;

a microelectronic device embedded in the semiconductor substrate, the microelectronic device being selected from integrated circuits, charge coupled devices, metal sensor pads, micro-disk lasers, electrochromic devices, photochromic devices, microelectromechanical systems and solar cells; and

at least one first barrier stack comprising at least one first barrier layer and at least one first polymer layer, the at least one first barrier stack adjacent to the microelectronic device, wherein the at least one first barrier stack encapsulates the microelectronic device.

34. The encapsulated microelectronic device of claim 33 wherein the oxygen transmission rate through the at least one first barrier stack is less than 0.005 cc/m²/day at 23°

C. and 0% relative humidity.

35. The encapsulated microelectronic device of claim 33 wherein the oxygen transmission rate through the at least one first barrier stack is less than 0.005 cc/m²/day at 38°

C. and 90% relative humidity.

36. The encapsulated microelectronic device of claim 33 wherein the water vapor transmission rate through the at least one first barrier stack is less than 0.005 gm/m²/day at 38°

C. and 100% relative humidity.

41. The encapsulated microelectronic device of claim 33 wherein at least one of the at least one first barrier layers is selected from opaque metals, opaque polymers, opaque ceramics, and opaque cermets.

42. The encapsulated microelectronic device of claim 33 wherein at least one of the at least one first polymer layers comprises an acrylate-containing polymer.

43. The encapsulated microelectronic device of claim 33 wherein the at least one first barrier layer comprises two barrier layers.

44. The encapsulated microelectronic device of claim 33 wherein the two barrier layers are made of the same barrier material.

45. The encapsulated microelectronic device of claim 33 wherein the two barrier layers are made of different barrier materials.

46. An encapsulated microelectronic device comprising:

a semiconductor substrate;

a microelectronic device adjacent to the semiconductor substrate, the microelectronic device being selected from integrated circuits, charge coupled devices, metal sensor pads, micro-disk lasers, electrochromic devices, photochromic devices, microelectromechanical systems and solar cells; and

at least one first barrier stack comprising at least one first barrier layer and at least one first polymer layer, the at least one first barrier stack adjacent to the microelectronic device, wherein the at least one first barrier stack encapsulates the microelectronic device, and wherein the oxygen transmission rate through the at least one first barrier stack is less than 0.005 cc/m²/day at 23°

C. and 0% relative humidity.

47. The encapsulated microelectronic device of claim 46 wherein the oxygen transmission rate through the at least one first barrier stack is less than 0.005 cc/m²/day at 38°

C. and 90% relative humidity.

48. The encapsulated microelectronic device of claim 46 wherein the water vapor transmission rate through the at least one first barrier stack is less than 0.005 gm/m²/day at 38°

C. and 100% relative humidity.

49. The encapsulated microelectronic device of claim 46 wherein at least one of the at least one first barrier layers comprises a material selected from metal oxides, metal nitrides, metal carbides, metal oxynitrides, metal oxyborides, and combinations thereof.

50. The encapsulated microelectronic device of claim 49 wherein the metal oxides are selected from silicon oxide, aluminum oxide, titanium oxide, indium oxide, tin oxide, indium tin oxide, tantalum oxide, zirconium oxide, niobium oxide, and combinations thereof.

51. The encapsulated microelectronic device of claim 49 wherein the metal nitrides are selected from aluminum nitride, silicon nitride, boron nitride, and combinations thereof.

52. The encapsulated microelectronic device of claim 49 wherein the metal oxynitrides are selected from aluminum oxynitride, silicon oxynitride, boron oxynitride, and combinations thereof.

53. The encapsulated microelectronic device of claim 46 wherein at least one of the at least one first barrier layers is selected from opaque metals, opaque polymers, opaque ceramics, and opaque cermets.

54. The encapsulated microelectronic device of claim 46 wherein at least one of the at least one first polymer layers comprises an acrylate-containing polymer.

55. The encapsulated microelectronic device of claim 46 wherein the at least one first barrier layer comprises two barrier layers.

56. The encapsulated microelectronic device of claim 46 wherein the two barrier layers are made of the same barrier material.