Semiconductor mechanical sensor

• US 6,550,331 B2
• Filed: 09/07/2001
• Issued: 04/22/2003
• Est. Priority Date: 08/21/1992
• Status: Expired due to Fees

• Current Assignee: Nippondenso Co., Ltd. (DENSO Corporation)
• Original Assignee: DENSO Corporation
• Inventors: Fujii, Tetsuo, Imai, Masahito
• Primary Examiner(s): KWOK, HELEN C
• Application Number:
  US09/947,409
• Publication Number:
  US 20020026832A1
• Time in Patent Office: 592 Days
• Field of Search: 735/041.5, 735/143.2, 735/141.6, 735/041.2, 735/041.3, 735/041.4, 361/307, 361/283.3, 361/321.1, 361/321.5, 361/283.1
• US Class Current: 73/514.32
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 7/0006 Interconnects
• CPC Class Codes: C07C 303/32 of salts of sulfonic acids
• CPC Class Codes: C07C 303/44 Separation; Purification
• CPC Class Codes: C07C 309/17 containing carboxyl groups bound to the carbon skeleton
• CPC Class Codes: G01C 19/56 Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
• CPC Class Codes: G01C 19/5656 the devices involving a micromechanical structure
• CPC Class Codes: G01C 19/5719 using planar vibrating masses driven in a translation vibration along an axis
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 2015/0817 for pivoting movement of the mass, e.g. in-plane pendulum
• CPC Class Codes: G01P 2015/0828 the mass being of the paddle type being suspended at one of its longitudinal ends
• CPC Class Codes: Y10T 29/49002 Electrical device making
• CPC Class Codes: Y10T 29/49004 including measuring or testing of device or component part

Abstract

A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

Claims

1. A semiconductor mechanical sensor comprising:

a movable portion which is formed on a substrate and has a first face on which a first electrode is provided and a second face on which a second electrode is provided;

a first correspondent electrode and a second correspondent electrode formed at the position facing said first electrode and second electrode respectively;

a first outgoing contact electrode contacted to said first electrode;

a second outgoing contact electrode contacted to said first correspondent electrode;

a third outgoing contact electrode contacted to said second electrode;

a fourth outgoing contact electrode contacted to said second correspondent electrode;

wherein said first to fourth outgoing contact electrodes are provided on substantially the same plane and mechanical force which acts in one direction of said moveable portion is detected by said first electrode and said first correspondent electrode and mechanical force which acts in another direction different from said one direction of said movable portion is detected by said second electrode and second correspondent electrode.

6. A semiconductor mechanical sensor in accordance with claim 1, wherein said one direction and said another direction of said movable portion are perpendicular to each other.

8. A semiconductor mechanical sensor in accordance with claim 1, wherein a correspondence member is provided which is disposed at a side opposite to a substrate side of said movable portion with a predetermined gap from said movable portion.

12. Semiconductor mechanical sensor in accordance with claim 6, wherein a correspondent member is provided which is disposed at a side opposite to a substrate side of said movable portion with a predetermined gap from said movable portion.

14. A semiconductor mechanical sensor in accordance with claim 8, wherein said correspondent member is a member which is provided so as to increase an output of the sensor and prevent destruction of said movable portion.

18. A semiconductor mechanical sensor in accordance with claim 12, wherein said correspondent member is a member which is provided so as to increase an output of the sensor and prevent destruction of said movable portion.

20. A semiconductor mechanical sensor in accordance with claim 1, wherein said movable portion is formed on a silicon layer.

25. A semiconductor mechanical sensor in accordance with claim 20, wherein either one of said first and second correspondent electrodes is formed in parallel to a major surface of said silicon layer.

30. A semiconductor mechanical sensor in accordance with claim 20, wherein between said substrate and said silicon layer, a conductive layer which is electrically connected to at least one of said first and second correspondent electrodes and is insulated from said substrate and said silicon layer is provided.

35. A semiconductor mechanical sensor in accordance with claim 20, wherein a silicon nitride is formed on a surface of said silicon layer.

40. A semiconductor mechanical sensor in accordance with claim 1, wherein said first outgoing contact electrode and said third outgoing contact electrode are made in common.

2. A semiconductor mechanical sensor comprising:

a movable portion which is formed on a conductive portion arranged on a substrate through a predetermined gap and which has a first face on which a first electrode is provided and a second face on which a second electrode is provided;

a correspondent electrode formed at the position facing said first electrode and second electrode respectively;

a first outgoing contact electrode contacted to said first electrode;

a second outgoing contact electrode contacted to said first correspondent electrode;

a third outgoing contact electrode contacted to said second electrode;

a fourth outgoing contact electrode contacted to said second correspondent electrode;

wherein said first to fourth outgoing contact electrodes are provided on said conductive portion, and mechanical force which acts in one direction of said movable portion is detected by said first electrode and said first correspondent electrode, and mechanical force which acts in another direction different from said one direction of said movable portion is detected by said second electrode and said second correspondent electrode.

7. A semiconductor mechanical sensor in accordance with claim 2, wherein said one direction and said another direction of said movable portion are perpendicular to each other.

9. A semiconductor mechanical sensor in accordance with claim 2, wherein a correspondent member is provided which is disposed at a side opposite to a substrate side of said movable portion with a predetermined gap from said movable portion.

13. A semiconductor mechanical sensor in accordance with claim 7, wherein a correspondent member is provided which is disposed at a side opposite to a substrate side of said movable portion with a predetermined gap from said movable portion.

15. A semiconductor mechanical sensor in accordance with claim 9, wherein said correspondent member is a member which is provided so as to increase an output of the sensor and prevent destruction of said movable portion.

19. A semiconductor mechanical sensor in accordance with claim 13, wherein said correspondent member is a member which is provided so as to increase an output of the sensor and prevent destruction of said movable portion.

21. A semiconductor mechanical sensor in accordance with claim 2, wherein said movable portion is formed on a silicon layer.

26. A semiconductor mechanical sensor in accordance with claim 21, wherein either one of said first and second correspondent electrodes is formed in parallel to a major surface of said silicon layer.

31. A semiconductor mechanical sensor in accordance with claim 21, wherein between said substrate and said silicon layer, a conductive layer which is electrically connected to at least one of said first and second correspondent electrodes and is insulated from said substrate and said silicon layer is provided.

36. A semiconductor mechanical sensor in accordance with claim 21, wherein a silicon nitride is formed on a surface of said silicon layer.

41. A semiconductor mechanical sensor in accordance with claim 2, wherein said first outgoing contact electrode and said third outgoing contact electrode are made in common.

3. A semiconductor mechanical sensor comprising:

a first electrode which is formed on a conductive portion arranged on a substrate;

a movable portion which is formed on said conductive portion through a predetermined gap and which moves in a direction substantially perpendicular to said substrate;

a second electrode which is formed at the position facing said first electrode of said movable portion;

a first outgoing contact electrode contacted to said first electrode;

a second outgoing contact electrode contacted to said second electrode;

wherein said first and second outgoing contact electrodes are provided on substantially the same plane;

and mechanical force which acts to said movable portion is detected by said first and second electrodes.

10. A semiconductor mechanical sensor in accordance with claim 3, wherein a correspondent member is provided which is disposed at a side opposite to a substrate side of said movable portion with a predetermined gap from said movable portion.

16. A semiconductor mechanical sensor in accordance with claim 10, wherein said correspondent member is a member which is provided so as to increase an output of the sensor and prevent destruction of said movable portion.

22. A semiconductor mechanical sensor in accordance with claim 3, wherein said movable portion is formed on a silicon layer.

27. A semiconductor mechanical sensor in accordance with claim 22, wherein one of said first and second electrodes is formed in parallel to a major surface of said silicon layer.

32. A semiconductor mechanical sensor in accordance with claim 22, wherein between said substrate and said silicon layer, a conductive layer which is electrically connected to at least one of said first and second electrodes and is insulated from said substrate and said silicon layer is provided.

37. A semiconductor mechanical sensor in accordance with claim 22, wherein a silicon nitride is formed on a surface of said silicon layer.

4. A semiconductor mechanical sensor comprising:

a first electrode which is formed on a first conductive portion arranged on a substrate;

a movable portion which is formed on a second conductive portion arranged on said first conductive portion through a predetermined gap and which moves in a direction substantially perpendicular to said substrate;

a second electrode which is formed at the position facing said first electrode of said movable portion;

a first outgoing contact electrode contacted to said first electrode;

a second outgoing contact electrode contacted to said second electrode;

wherein said first and second outgoing contact electrodes are provided on said second conductive portion, and mechanical force which acts to said movable portion is detected by said first and second electrodes.

11. A semiconductor mechanical sensor in accordance with claim 4, wherein a correspondent member is provided which is disposed at a side opposite to a substrate side of said movable portion with a predetermined gap from said movable portion.

17. A semiconductor mechanical sensor in accordance with claim 11, wherein said correspondent member is a member which is provided so as to increase an output of the sensor and prevent destruction of said movable portion.

23. A semiconductor mechanical sensor in accordance with claim 4, wherein said movable portion is formed on a silicon layer.

28. A semiconductor mechanical sensor in accordance with claim 23, wherein one of said first and second electrodes is formed in parallel to a major surface of said silicon layer.

33. A semiconductor mechanical sensor in accordance with claim 23, wherein between said substrate and said silicon layer, a conductive layer which is electrically connected to at least one of said first and second electrodes and is insulated from said substrate and said silicon layer is provided.

38. A semiconductor mechanical sensor in accordance with claim 23, wherein a silicon nitride is formed on a surface of said silicon layer.

5. A semiconductor mechanical sensor comprising:

a first electrode which is formed on a first conductive portion arranged on a substrate;

a movable portion comprising a second conductive portion which is formed on said first conductive portion through a predetermined gap and which moves in a direction substantially perpendicular to said substrate;

a second electrode which is formed at the position on said movable portion facing said first electrode;

wherein conductive portion formed on said substrate is configured by said first and second conductive portions, and mechanical force which acts to said movable portion is detected by said first and second electrodes.

24. A semiconductor mechanical sensor in accordance with claim 5, wherein said movable portion is formed on a silicon layer.

29. A semiconductor mechanical sensor in accordance with claim 24, wherein one of said first and second electrodes is formed in parallel to a major surface of said silicon layer.

34. A semiconductor mechanical sensor in accordance with claim 24, wherein between said substrate and said silicon layer, a conductive layer which is electrically connected to at least one of said first and second electrodes and is insulated from said substrate and said silicon layer is provided.

39. A semiconductor mechanical sensor in accordance with claim 24, wherein a silicon nitride is formed on a surface of said silicon layer.