Pressure sensor for detecting differential pressure between two spaces

• US 6,550,339 B1
• Filed: 05/01/2000
• Issued: 04/22/2003
• Est. Priority Date: 05/06/1999
• Status: Expired due to Fees

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Toyoda, Inao, Suzuki, Yasutoshi
• Primary Examiner(s): Williams, Hezron
• Assistant Examiner(s): FERGUSON SAMRETH, MARISSA LIANA
• Application Number:
  US09/562,134
• Time in Patent Office: 1,086 Days
• Field of Search: 737/15--17, 737/25--27, 737/54, 737/06, 737/56, 737/24, 737/23
• US Class Current: 73/716
• CPC Class Codes: G01L 15/00 Devices or apparatus for measuring two or more fluid pressure values simultaneously
• CPC Class Codes: G01L 19/146 using flexible element between the transducer and the support
• CPC Class Codes: G01L 19/147 Details about the mounting of the sensor to support or covering means
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

A pressure sensor has two sensor elements respectively disposed in different pressure spaces A and B. Each of the sensor elements has a semiconductor substrate having a pressure reference chamber therein, a diaphragm formed as a wall defining the pressure reference chamber, and gauges for converting deformation of the diaphragm into an electric signal. The two sensor elements overlap with each other at sides opposite to the respective diaphragms, and close a hole formed in a partition member partitioning the two pressure spaces A and B. A differential pressure between the pressure spaces A and B is detected as a relative pressure by a difference between outputs from the two sensor elements.

Claims

1. A pressure sensor comprising:

a partition member;

first and second sensor elements, each comprising;

a semiconductor substrate having a pressure reference chamber therein;

a diaphragm formed as a wall defining the pressure reference chamber; and

a conversion member for converting deformation of the diaphragm into an electric signal; and

a signal processing element for processing the electric signal that is provided in one of the first and second sensor elements,

wherein the signal processing element is a signal processing circuit;

wherein the first and second sensor elements are respectively disposed in first and second pressure spaces, which are different from each other and separated from each other by the partition member to respectively have first and second pressures;

wherein the partition member includes thereon a conductive member that electrically connects the first sensor element with the second sensor element;

wherein a differential pressure between the first and second pressures is detected as a relative pressure by a difference between outputs from the first and second sensor elements.

2. The pressure sensor according to claim 1, wherein only one of the first and second sensor elements has a thin film metallic resistor for adjusting amplification of the electric signal.

3. The pressure sensor according to claim 1, wherein only one of the first and second sensor elements has an EPROM for correcting the electric signal.

4. The pressure sensor according to claim 1, wherein the first and second sensor elements overlap with each other at surfaces respectively opposite to the diaphragm thereof.

5. The pressure sensor according to claim 1, wherein:

the partition member has a hole;

the first and second sensor elements overlap with each other; and

at least one of the two sensor elements is bonded to the partition member to close the hole.

6. The pressure sensor according to claim 5, wherein the first sensor element has a substrate area larger than a substrate area of the second sensor element and the first sensor element further has a first sensor main surface including the diaphragm and a first sensor back surface which is bonded to the partition to close the hole, and

wherein the second sensor element has a second sensor main surface including the diaphragm and a second sensor back surface which is bonded to the first sensor back surface through the hole.

9. The pressure sensor according to claim 1, wherein:

the first sensor element is bonded to a first surface of the partition member; and

the second sensor element is bonded to a second surface of the partition member at a side opposite the first surface.

10. The pressure sensor according to claim 1, wherein the partition member is an insulation substrate and has another conductive member to output a signal from one of the sensor elements.

11. The pressure sensor according to claim 10, wherein the partition member is made of one of ceramic and resin.

12. The pressure sensor according to claim 11, wherein:

the partition member is made of resin; and

the another conductive member is insert-molded in the partition member.

14. The pressure sensor according to claim 10, further comprising a wire connecting the another conductive member and one of the first and second sensor elements.

7. A pressure sensor comprising:

a partition member;

first and second sensor elements, each comprising;

a semiconductor substrate having a pressure reference chamber therein;

a diaphragm formed as a wall defining the pressure reference chamber; and

a conversion member for converting deformation of the diaphragm into an electric signal; and

a signal processing element for processing the electric signal that is provided in one of the first and second sensor elements, wherein;

the signal processing element is a signal processing circuit;

the first and second sensor elements are respectively disposed in first and second pressure spaces, which are different from each other and separated from each other by the partition member to respectively have first and second pressures;

the partition member includes thereon a conductive member that electrically connects the first sensor element with the second sensor element;

a differential pressure between the first and second pressures is detected as a relative pressure by a difference between outputs from the first and second sensor elements; and

the signal processing element includes a first signal processing element provided in the first sensor element and a second signal processing element having a constitution different from the first signal processing element and provided in the second sensor element.

8. The pressure sensor according to claim 7, wherein:

the first signal processing element is a bipolar transistor element for amplifying the electric signal; and

the second signal processing element is a MOS transistor element for correcting the electric signal.

13. A pressure sensor comprising:

a partition member;

first and second sensor elements, each comprising;

a semiconductor substrate having a pressure reference chamber therein;

a diaphragm formed as a wall defining the pressure reference chamber; and

a conversion member for converting deformation of the diaphragm into an electric signal; and

a signal processing element for processing the electric signal that is provided in one of the first and second sensor elements, wherein;

the signal processing element is a signal processing circuit;

the first and second sensor elements are respectively disposed in first and second pressure spaces, which are different from each other and separated from each other by the partition member to respectively have first and second pressures;

the partition member includes thereon a conductive member that electrically connects the first sensor element with the second sensor element;

a differential pressure between the first and second pressures is detected as a relative pressure by a difference between outputs from the first and second sensor elements;

the partition member is composed of resin and has another conductive member to output a signal from one of the sensor elements;

the another conductive member is insert-molded in the partition member; and

the pressure sensor further comprises a protective member covering a joining portion between the partition member and the another conductive member.

15. A pressure sensor for detecting a differential pressure between first and second spaces, the pressure sensor comprising:

a partition member partitioning first and second pressure spaces respectively having first and second pressures;

a first sensor element having a first sensor main surface which has a diaphragm exposed to the first pressure space to be deformed in response to the first pressure, and a first sensor back surface which is bonded to a first surface of the partition member with an area smaller than an area of the first surface of the partition member; and

a second sensor element having a second sensor main surface which has a diaphragm exposed to the second pressure space to be deformed in response to the second pressure,

wherein the partition member includes a conductive member that electrically connects the first sensor element with the second sensor element.

16. A pressure sensor comprising:

a partition member;

first and second sensor elements, each comprising;

a semiconductor substrate having a pressure reference chamber therein;

a diaphragm formed as a wall defining the pressure reference chamber, and

a conversion member for converting deformation of the diaphragm into an electric signal; and

a signal processing element for processing the electric signal that is provided in one of the first and second sensor elements, wherein;

the signal processing element is a signal processing circuit;

the first and second sensor elements are respectively disposed in first and second pressure spaces, which are different from each other and separated from each other by the partition member to respectively have first and second pressures;

the partition member includes thereon a conductive member that electrically connects the first sensor element with the second sensor element;

a differential pressure between the first and second pressures is detected as a relative pressure by a difference between outputs from the first and second sensor elements; and

the signal processing element includes one of a bipolar transistor element, a MOS transistor element, and a Bi-CMOS transistor element and is provided only in the first sensor element.

17. A pressure sensor comprising:

a partition member;

first and second sensor elements, each comprising;

a semiconductor substrate having a pressure reference chamber therein;

a diaphragm formed as a wall defining the pressure reference chamber; and

a conversion member for converting deformation of the diaphragm into an electric signal; and

a signal processing element for processing the electric signal that is provided in one of the first and second sensor elements, wherein;

the signal processing element is a signal processing circuit;

the fist and second sensor elements are respectively disposed in first and second pressure spaces, which are different from each other and separated from each other by the partition member to respectively have first and second pressures;

the partition member includes thereon a conductive member that electrically connects the first sensor element with the second sensor element;

a differential pressure between the first and second pressures is detected as a relative pressure by a difference between outputs from the first and second sensor elements;

the signal processing element includes a first signal processing element provided in the first sensor element and a second signal processing element provided in the second sensor element; and

each signal processing element includes one of a bipolar transistor element, a MOS transistor element, and a Bi-CMOS transistor element such that each signal processing element includes a different type of transistor element from each other.