Self-aligned dual-oxide umosfet device and a method of fabricating same

• US 6,551,881 B1
• Filed: 10/01/2001
• Issued: 04/22/2003
• Est. Priority Date: 10/01/2001
• Status: Expired due to Term

• Current Assignee: Nexperia B.V. (Wingtech Technology Co., Ltd.)
• Original Assignee: Koninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
• Inventors: Letavic, Tod
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): Lindsay, Jr., Walter L.
• Application Number:
  US09/968,142
• Publication Number:
  US 20030062569A1
• Time in Patent Office: 568 Days
• Field of Search: 438/243, 438/360, 438/386, 438/270, 438/267, 438/259, 438/144, 438/212, 438/387
• US Class Current: 438/267
• CPC Class Codes: H01L 21/2652 Through-implantation
• CPC Class Codes: H01L 21/26586 characterised by the angle between the ion beam and the crystal planes or the main crystal surface
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A self-aligned dual-oxide UMOSFET device and a method for fabricating the same which includes a gate in the trench which self-aligns the channel body doping region and its associated body-drift region junction, the region for depositing the gate insulating layer, and the depth of ledge for the field layer step for a sidewall of a trench using a multiple-energy large angle tilt implant (LATid) technique. One of the energy levels of the LATid technique is optimized to damage a top silicon nitride layer of the LOCOS mask. The other energy levels of the LATid technique are for the formation of the channel body region in substrate mesas adjacent the trench. Implantation occurs using the same tilt angle for the implantation of the channel dopant at the multiple-energy levels.

Claims

1. A method of forming a self-aligned dual-oxide UMOSFET, comprising the steps of:

etching a trench having sidewalls and a floor into a substrate;

creating a gate in the trench by self-aligning a channel body doping region having a respective body-drift region junction, a region for depositing a gate insulating layer, and a depth of a field insulating layer step on a sidewall of the trench through implantation of a channel dopant at multiple-energy levels; and

forming a source and a drain;

further comprising the step of depositing in the trench and over the substrate a mask that includes an insulating layer having a first thickness, wherein the self-aligning step includes the steps of;

implanting the channel doping at a first energy level through the mask in a substrate mesa adjacent to the sidewall of the trench to create the channel body doping region with a body-drift region junction therein; and

implanting the channel doping at a second energy level to damage a portion of the mask along the body-drift region junction, wherein the damaged portion of the mask defines the region for depositing the gate insulating layer and the depth of the field insulating layer step.

2. The method according to claim 1, wherein the implanting step at the first energy level and the implanting step at the second energy level occur simultaneously at a same angle.

3. The method according to claim 1, wherein the implanting step at the first energy level and the implanting step at the second energy level occur sequentially at a same angle.

4. The method according to claim 1, wherein the channel doping is highest in a center the substrate mesas.

5. The method according to claim 4, wherein the channel body region is doped with a P-channel dopant.

6. The method according to claim 1, wherein the implanting steps are performed using a multiple-energy large angle tilt implant technique.

7. The method according to claim 1, further comprising the steps of:

removing the damaged portion of the mask to expose a periphery surface of the channel body doping region defining the region for depositing the gate insulating layer while simultaneously creating the field layer step at the depth on the sidewall that is substantially self-aligned with the body-drift region junction;

forming the gate insulating layer having a second thickness over the exposed periphery surfaces of the channel body doping region from the field layer step on the sidewall wherein the second thickness is optimized for channel performance and the first thickness is optimized for voltage handling; and

forming a polysilicon region in the trench which is interfaced with the gate insulating layer and the thick insulating layer.

8. The method according to claim 7, wherein the step of forming the gate insulating layer includes a local oxidation of silicon process.

9. The method according to claim 7, wherein the removing step includes wet etching in phosphoric acid the damaged portion of the mask to remove a silicon nitride layer thereby exposing the insulating layer.

10. The method according to claim 9, wherein the removing step further includes the step of wet etching in a diluted hydrogen-floride solution the exposed thick insulating layer to remove the exposed thick insulating layer.

11. The method according to claim 10, wherein:

the mask also includes a silicon nitride layer deposited over the thick insulating layer; and

the removing step includes, after the forming of the gate insulating layer, removing remaining portions of the silicon nitride layer.