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Method for preventing borderless contact to well leakage

  • US 6,551,901 B1
  • Filed: 11/30/2001
  • Issued: 04/22/2003
  • Est. Priority Date: 08/21/2001
  • Status: Expired due to Term
First Claim
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1. A method of forming a semiconductor chip, comprising:

  • creating shallow trenches containing field oxide on a substrate;

    forming at least one semiconductor device between the shallow trenches;

    forming an oxide layer over the at least one semiconductor device and the field oxide, wherein the forming the oxide layer over the semiconductor device comprises;

    forming a conformal oxide layer; and

    etching back the conformal oxide layer;

    forming an etch stop layer over the oxide layer;

    forming an inter layer dielectric layer over the etch stop layer;

    etching at least one contact hole through the inter layer dielectric layer, the etch stop layer and at least partially through the oxide layer; and

    filling the at least one contact hole with a conductive material.

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