Solar cell with bypass function and multi-junction stacked type solar cell with bypass function, and method for manufacturing these devices

• US 6,552,259 B1
• Filed: 10/18/2000
• Issued: 04/22/2003
• Est. Priority Date: 10/18/1999
• Status: Expired due to Fees

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Hosomi, Shigeyuki, Hisamatsu, Tadashi
• Primary Examiner(s): DIAMOND, ALAN D
• Application Number:
  US09/691,853
• Time in Patent Office: 916 Days
• Field of Search: 136/255, 136/249, 136/252, 136/262, 257/461, 257/443, 257/448, 438/73, 438/74, 438/93, 438/514, 438/518, 438/519, 438/526, 438/527, 438/531
• US Class Current: 136/255
• CPC Class Codes: H01L 27/1421 comprising bypass diodes integrated or directly associated with the device, e.g. bypass diode integrated or formed in or on the same substrate as the solar cell
• CPC Class Codes: H01L 31/0687 Multiple junction or tandem solar cells
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

In this bypass-function added solar cell, a plurality of island-like p⁺ regions, which is third regions, are formed at a boundary between a p-type region and an n-type region layer constituting a substrate so that the p⁺ regions project into the region and the region and are separated away from the surface of the substrate. Therefore, in this solar cell, unlike prior art counterparts, the insulating film for isolating the p⁺ regions and the n electrodes constituting the np⁺ diode from one another is no longer necessary, thus allowing a reduction in manufacturing cost. As a result, a bypass-function added solar cell with a bypass-diode function added thereto can be provided with low cost and by simple process.

Claims

1. A bypass-function added solar cell comprising:

a first-conductive-type first region;

a second-conductive-type second region formed on a light-receiving surface side of the first-conductive-type first region;

a first-conductive-type third region which is formed at part of a pn junction plane where the first region and the second region abut each other so that the third region is provided over the first region and the second region and projects into both the first region and the second region, the third region being higher in impurity concentration than the first-conductive-type first region; and

wherein the first-conductive-type third region projects into the second region but does not reach a surface of the second region that is closest to light-receiving surface side electrodes of the solar cell.

2. The bypass-function added solar cell according to claim 1, wherein a plurality of the first-conductive-type third regions are provided.

3. The bypass-function added solar cell according to claim 1, wherein at least one of the light-receiving surface side electrodes directly contacts the second region and is formed above the third region.

4. The bypass-function added solar cell according to claim 1, wherein

the first-conductive-type third region is formed into a dotted or linear shape.

5. The bypass-function added solar cell according to claim 3, wherein

the first-conductive-type third region is formed into a dotted or linear shape.

6. A method for manufacturing the bypass-function added solar cell as defined in claim 1, comprising:

an ion implantation step of implanting ions into the first-conductive-type first region to thereby form the first-conductive-type third region higher in impurity concentration than the first-conductive-type first region so that the third region is projected into both the first region and the second region.

7. The method for manufacturing the bypass-function added solar cell according to claim 6, wherein

in the ion implantation step, any one of boron, gallium, aluminum and indium is used as a doping material.

8. The method for manufacturing the bypass-function added solar cell according to claim 6, further comprising:

after the ion implantation step, forming the second-conductive-type second region by a thermal diffusion process and, simultaneously therewith, activating the third region.

9. The method for manufacturing the bypass-function added solar cell according to claim 6, wherein in the ion implantation step, ion implantation is performed with a photosensitive resin used as a masking material to thereby form the third region into an island shape.

10. The method for manufacturing the bypass-function added solar cell according to claim 6, wherein

in the ion implantation step,

an ion beam controlled to a specified area is implanted to thereby form the third region.

11. A bypass-function added multi-junction stacked solar cell in which the bypass-function added solar cell as defined in claim 1 is stacked, in a plural number as sub-cells, in series along a direction of incidence of light.

12. A bypass-function added multi-junction stacked solar cell in which the bypass-function added solar cell as defined in claim 2 is stacked, in a plural number as sub-cells, in series along a direction of incidence of light.

13. A bypass-function added multi-junction stacked solar cell in which the bypass-function added solar cell as defined in claim 4 is stacked, in a plural number as sub-cells, in series along a direction of incidence of light.

14. The bypass-function added multi-junction stacked solar cell according to claim 11, wherein a light-receiving surface side electrode in abutment on part of the second region is formed just above the third region.

15. The bypass-function added multi-junction stacked solar cell according to claim 11, wherein active layer portions of the solar cells as sub-cells comprise a group III-V compound semiconductor.

16. The bypass-function added multi-junction stacked solar cell according to claim 11, wherein the number of third regions differ from sub-cell to sub-cell.

17. The bypass-function added multi-junction stacked solar cell according to claim 14, wherein the number of third regions differ from sub-cell to sub-cell.

18. The bypass-function added multi-junction stacked solar cell according to claim 15, wherein the number of third regions differ from sub-cell to sub-cell.

19. The bypass-function added multi-junction stacked solar cell according to claim 11, wherein a number of third regions formed in a top cell positioned closest to the light-receiving surface is the largest among the sub-cells.

20. The bypass-function added multi-junction stacked solar cell according to claim 14, wherein a number of third regions formed in a top cell positioned closest to the light-receiving surface is the largest among the sub-cells.

21. The bypass-function added multi-junction stacked solar cell according to claim 15, wherein a number of third regions formed in a top cell positioned closest to the light-receiving surface is the largest among the sub-cells.

22. The bypass-function added multi-junction stacked solar cell according to claim 11, wherein a number of third regions formed in a sub-cell of the stack that is the smallest in production current density during photo-irradiation is the largest.

23. The bypass-function added multi-junction stacked solar cell according to claim 14, wherein a number of third regions formed in a sub-cell of the stack that is the smallest in production current density during photo-irradiation is the largest.

24. The bypass-function added multi-junction stacked solar cell according to claim 15, wherein a number of third regions formed in a sub-cell of the stack that is the smallest in production current density during photo-irradiation is the largest.

25. The bypass-function added multi-junction stacked solar cell according to claim 16, wherein positions on cell planes where the third regions are formed are uniform regardless of positions of the light-receiving surface side electrodes.

26. The bypass-function added multi-junction stacked solar cell according to claim 19, wherein positions on cell planes where the third regions are formed are uniform regardless of positions of light-receiving surface side electrodes.

27. The bypass-function added multi-junction stacked solar cell according to claim 22, wherein positions on cell planes where the third regions are formed are uniform regardless of positions of light-receiving surface side electrodes.

28. The bypass-function added multi-junction stacked solar cell according to claim 16, wherein positions on cell planes where the third regions are formed are positions under light-receiving surface side electrodes.

29. The bypass-function added multi-junction stacked solar cell according to claim 19, wherein positions on cell planes where the third regions are formed are positions under light-receiving surface side electrodes.

30. The bypass-function added multi-junction stacked solar cell according to claim 22, wherein positions on cell planes where the third regions are formed are positions under light-receiving surface side electrodes.

31. The bypass-function added multi-junction stacked solar cell according to claim 16, wherein among the individual sub-cells, positions where the third regions are formed on their cell planes are positions different from one another under light-receiving surface side electrodes.

32. The bypass-function added multi-junction stacked solar cell according to claim 19, wherein among the individual sub-cells, positions where the third regions are formed on their cell planes are positions different from one another under light-receiving surface side electrodes.

33. The bypass-function added multi-junction stacked solar cell according to claim 22, wherein among the individual sub-cells, positions where the third regions are formed on their cell planes are positions different from one another under light-receiving surface side electrodes.

34. A method for manufacturing the bypass-function added multi-junction stacked solar cell as defined in claim 28, the method comprising:

after forming the third regions at positions under the light-receiving surface side electrodes, activating these third regions by beam annealing.

35. A method for manufacturing the bypass-function added multi-junction stacked solar cell as defined in claim 31, the method comprising:

after forming the third regions at positions under the light-receiving surface side electrodes, activating these third regions by beam annealing.

36. The method for manufacturing the bypass-function added solar cell according to claim 6, wherein

ion implantation material is one or a plurality of Be, Cd, Mg, Zn and C, or a combination of one or a plurality of Be, Cd, Mg, Zn and C and one of B, Al, Ga and In.

37. The method for manufacturing the bypass-function added solar cell according to claim 6, wherein

ion implantation material for use in said ion implantation step is one or a plurality of S, Se, Te and Si, or a combination of one or a plurality of S, Se, Te and Si and one of N, P, As and Sb.

38. A bypass-function added solar cell comprising:

a first-conductive-type first region;

a second-conductive-type second region formed on a light-receiving surface side of the first-conductive-type first region;

a first-conductive-type third region which is formed at part of a pn junction plane where the first region and the second region abut each other so that the third region is provided over part of the first region and the second region and projects into both the first region and the second region, the third region being higher in impurity concentration than the first-conductive-type first region; and

wherein the first-conductive-type third region projects into both the first and second regions but does not extend all the way through either of the first and second regions.