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Hetero-junction field effect transistor having an intermediate layer

  • US 6,552,373 B2
  • Filed: 03/28/2001
  • Issued: 04/22/2003
  • Est. Priority Date: 03/28/2000
  • Status: Active Grant
First Claim
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1. A hetero-junction filed effect transistor (HJFET) comprising a substrate, a layer structure including an InxGa1−

  • xN (0≦

    x≦

    1) channel layer, an AlyGa1−

    y
    N (0<

    y≦

    1) electron supply layer, at least one intermediate layer and an n-type GaN cap layer consecutively formed on said substrate, a gate electrode disposed in contact with said electron supply layer, and source and drain electrodes disposed in contact with said n-type cal layer, said at least one intermediate layer being formed as a single n-type-impurity doped layer or a plurality of stacked layers including at least one n-type-impurity doped layer,wherein said n-type-impurity doped layer includes n-type impurities in a surface density (Ns cm

    2
    ) expressed by;

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