Semiconductor device and a method of manufacturing the same

• US 6,552,421 B2
• Filed: 05/31/2001
• Issued: 04/22/2003
• Est. Priority Date: 06/09/2000
• Status: Expired due to Term

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Hitachi, Ltd.
• Inventors: Hirashima, Toshinori, Satou, Hiroshi, Oka, Hiroi, Kishimoto, Munehisa
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Nhu, David
• Application Number:
  US09/867,655
• Publication Number:
  US 20010050422A1
• Time in Patent Office: 691 Days
• Field of Search: 257/678, 257/737, 257/734, 257/735, 257/777, 257/778, 257/779, 257/781, 257/782, 257/783, 257/787, 257/784
• US Class Current: 257/678
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05557 comprising protrusions or indentations
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/27013 for holding or confining the layer connector, e.g. solder flow barrier
• CPC Class Codes: H01L 2224/29076 being mutually engaged together, e.g. through inserts
• CPC Class Codes: H01L 2224/3003 Layer connectors having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/30179 Corner adaptations, i.e. disposition of the layer connectors at the corners of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/30505 Layer connectors having different materials
• CPC Class Codes: H01L 2224/32014 the layer connector being smaller than the bonding area, e.g. bond pad
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48011 Length
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 : the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/48472 : the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/48599 : Principal constituent of the connecting portion of the wire connector being Gold (Au)
• CPC Class Codes: H01L 2224/48699 : Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
• CPC Class Codes: H01L 2224/4903 : Connectors having different sizes, e.g. different diameters
• CPC Class Codes: H01L 2224/49051 : Connectors having different shapes
• CPC Class Codes: H01L 2224/49111 : the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/73203 : Bump and layer connectors
• CPC Class Codes: H01L 2224/73204 : the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73253 : Bump and layer connectors
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/83194 : Lateral distribution of the layer connectors
• CPC Class Codes: H01L 2224/85205 : Ultrasonic bonding
• CPC Class Codes: H01L 2224/92247 : the second connecting process involving a wire connector
• CPC Class Codes: H01L 2224/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/3737 : Organic materials with or without a thermoconductive filler
• CPC Class Codes: H01L 23/49568 : specifically adapted to facilitate heat dissipation
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/20656 : larger or equal to 5000 microns less than 6000 microns
• CPC Class Codes: H01L 2924/2076 : equal to or larger than 100 microns
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H01L 2924/3512 : Cracking

Abstract

The present invention provides a semiconductor device which is stably operated even with respect to heat generated upon its operation and makes no use of an environmental harmful substance (lead). The semiconductor device includes a support plate for supporting a semiconductor chip and the semiconductor chip fixed onto the support plate with an adhesive interposed therebetween. The semiconductor chip is fixed to the support plate by a highly thermal conductive adhesive and a high junction strength adhesive provided so as to separate bonding areas from one another. The highly thermal conductive adhesive is provided in plural places within the whole fixing area. The highly thermal conductive adhesive is associated with a heated portion of the semiconductor chip. The high junction strength adhesive is provided so as to surround the highly thermal conductive adhesive. Both the adhesives do not contain lead corresponding to the environmental harmful substance.

Claims

1. A semiconductor device comprising:

a support plate which supports a semiconductor chip; and

said semiconductor chip fixed onto said support plate with an adhesive interposed therebetween;

wherein said semiconductor chip is fixed to said support plate by a first adhesive and a second adhesive provided so as to separate bonding areas from one another, and said first adhesive is a highly thermal conductive adhesive higher in thermal conductivity than said second adhesive and said second adhesive is a high junction strength adhesive higher in junction strength than said first adhesive; and

wherein a space gap is absent at an interface between a peripheral edge of the highly thermal conductive adhesive and a bonded portion formed by the high junction strength adhesive.

2. The semiconductor device according to claim 1, wherein said highly thermal conductive adhesive is an adhesive containing a metal and said high junction strength adhesive is a resin adhesive containing no metal.

3. The semiconductor device according to claim 2, wherein said highly thermal conductive adhesive contains silver and said high junction strength adhesive contains no silver.

4. The semiconductor device according to claim 1, wherein an entirety of the fixing area of said semiconductor chip is fixed to said support plate by the highly thermal conductive adhesive and the high junction strength adhesive.

5. The semiconductor device according to claim 1, wherein said highly thermal conductive adhesive is provided in plural places within an entirety of the fixing area.

6. The semiconductor device according to claim 1, wherein said highly thermal conductive adhesive is placed so as to correspond to a heated portion of said semiconductor chip.

7. The semiconductor device according to claim 1, wherein said highly thermal conductive adhesive comprises a conductive adhesive, and said high junction strength adhesive comprises a conductive adhesive or a non-conductive adhesive.

8. The semiconductor device according to claim 1, wherein said highly thermal conductive adhesive and said high junction strength adhesive contain no lead.

9. The semiconductor device according to claim 1, wherein a plurality of semiconductor chips are fixed to said support plate.

10. The semiconductor device according to claim 1, wherein said support plate comprises a wiring substrate provided with a plurality of external electrode terminals on the back thereof, and said semiconductor chip is fixed to the surface of said wiring substrate.

11. The semiconductor device comprising:

a support plate which supports a semiconductor chip; and

said semiconductor chip fixed onto said support plate with an adhesive interposed therebetween;

wherein said semiconductor chip is fixed to said support plate by a first adhesive and a second adhesive provided so as to separate bonding areas from one another, and said first adhesive is a highly thermal conductive adhesive higher in thermal conductivity than said second adhesive and said second adhesive is a high junction strength adhesive higher in junction strength than said first adhesive;

wherein a space gap is absent at an interface between a peripheral edge of the highly thermal conductive adhesive and a bonded portion formed by the high junction strength adhesive; and

wherein said support plate comprises a radiating fin, said semiconductor chip is fixed to the surface of said radiating fin, and a plurality of external electrode terminals are provided on the surface of said semiconductor chip.

12. A semiconductor device comprising:

a sealing body comprised of an insulative resin;

a metal support plate which has at least part covered with said sealing body, and a lower surface exposed from said sealing body and which serves as a first electrode;

a suspender lead which is continuously connected to said support plate and protrudes from one side of said sealing body;

a second electrode lead which serves as a second electrode, and a control electrode lead which serves as a control electrode, both of which protrude from said one side of said sealing body side by side; and

a semiconductor chip which is covered with said sealing body, has a first electrode at a lower surface thereof, and has a second electrode and a control electrode at an upper surface thereof and whose lower surface is fixed to said support plate with a conductive adhesive interposed therebetween; and

wires which are placed within said sealing body and respectively electrically connect the second electrode with the second electrode lead, and the control electrode with the control electrode lead,

wherein said semiconductor chip has a whole fixing area fixed to said support plate by a highly thermal conductive adhesive and a high junction strength adhesive provided so as to separate bonding areas from one another, and a space gap is absent at an interface between a peripheral edge of the highly thermal conductive adhesive and a bonded portion formed by the high junction strength adhesive.

13. The semiconductor device according to claim 12, wherein said highly thermal conductive adhesive is provided in plural places within the whole fixing area, and said partial highly thermal conductive adhesive is placed so as to correspond to a heated portion of said semiconductor chip.

14. The semiconductor device according to claim 12, wherein said highly thermal conductive adhesive and said high junction strength adhesive contain no lead.

15. The semiconductor device according to claim 12, wherein the control electrode lead and the second electrode lead, which protrude from the one side of said sealing body, are respectively bent in the course thereof so as to take surface-mounted structures.

16. The semiconductor device according to claim 12, wherein a mounting hole is formed in a portion which protrudes from said sealing body of said support plate.

17. The semiconductor device according to claim 12, wherein said semiconductor chip has any of a power MOSFET, a power bipolar transistor and an IGBT wherein the first electrode, second electrode and control electrode are respectively set as electrodes.