Method and system for a combination of high boron and low boron BPSG top clad fabrication process for a planar lightwave circuit

• US 6,553,170 B2
• Filed: 08/31/2001
• Issued: 04/22/2003
• Est. Priority Date: 08/31/2001
• Status: Expired due to Term

• Current Assignee: NeoPhotonics Corporation (Lumentum Holdings Inc.)
• Original Assignee: Lightwave Microsystems Corporation (Lumentum Holdings Inc.)
• Inventors: Li, Kangjie, Zhong, Fan
• Primary Examiner(s): Spyrou, Cassandra
• Assistant Examiner(s): ALLEN, DENISE S
• Application Number:
  US09/945,300
• Publication Number:
  US 20030044151A1
• Time in Patent Office: 599 Days
• Field of Search: 385/129, 385/130, 385/131, 385/144, 385/12, 385/14, 252/389.4, 427/163.2, 654/43, 654/44, 654/45, 654/46, 653/86
• US Class Current: 385/130
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: G02B 2006/12169 Annealing
• CPC Class Codes: G02B 6/132 by deposition of thin films
• CPC Class Codes: G02B 6/136 by etching

Abstract

A method of depositing a dual layer top clad for an optical waveguide of a planar lightwave circuit (PLC). The method includes a first step of providing a high flow rate of a Boron dopant gas for a first top cladding layer deposition process. Then, a low flow rate of a Boron dopant gas is provided for a second top cladding layer deposition process. The second top cladding layer deposition process is performed directly on the first top cladding layer deposition. The first and second top cladding layer deposition processes are combined to form a dual layer top clad of the PLC having a high Boron portion covering a plurality of optical cores and a low Boron portion covering the first portion. The first top cladding layer deposition process can comprises three deposition and anneal cycles using the high flow rate for the Boron dopant gas. The three deposition and anneal cycles are used to fill gaps between the plurality of optical cores of the PLC. The second top cladding layer deposition process comprises a single deposition and anneal cycle using the low flow rate for the Boron dopant gas. The low Boron portion is configured to cover the high Boron portion and protect the high Boron portion from corrosion. The Boron dopant gas can comprise B₂H₆ or B(OCH₃)₃ tetramethyl borate (TMB). Thus the dual layer top clad process can effectively fill high aspect ratio gaps between waveguide cores while maintaining good corrosion resistance.

Claims

1. A method of depositing a top clad layer for an optical waveguide of a planar lightwave circuit (PLC), the method comprising the steps of:

a) providing a high flow rate of a Boron dopant gas for a first top cladding layer deposition process; and

b) providing a low flow rate of a Boron dopant gas for a second top cladding layer deposition process, the first top cladding layer and the second top cladding layer combined to form a top cladding layer of the PLC having a high Boron portion covering a plurality of optical cores and a low Boron portion covering the high Boron portion.

2. The method of claim 1 wherein the first top cladding layer deposition process comprises three deposition and anneal cycles using the high flow rate for the Boron dopant gas.

3. The method of claim 2 wherein the three deposition and anneal cycles are used to fill gaps between the plurality of optical cores of the PLC.

4. The method of claim 1 wherein the second top cladding layer deposition process comprises a single deposition and anneal cycle using the low flow rate of the Boron dopant gas.

5. The method of claim 1 wherein the low Boron portion is configured to cover the high Boron portion to protect the high Boron portion from corrosion.

6. The method of claim 1, wherein the Boron dopant gas comprises B₂H₆ or B(OCH₃)₃ tetramethyl borate (TMB).

7. A method of depositing a dual layer top clad for a planar lightwave circuit (PLC) device, the method comprising the steps of:

a) providing a high flow rate of a Boron dopant gas for a first top cladding layer deposition process; and

b) providing a low flow rate of a Boron dopant gas for a second top cladding layer deposition process, the first top cladding layer deposition process and the second top cladding layer deposition process combined to form a top cladding layer of the PLC having a high Boron portion covering a plurality of optical cores and a low Boron portion covering the high Boron portion.

8. The method of claim 7 wherein the first top cladding layer deposition process comprises three deposition and anneal cycles using the high flow rate of the Boron dopant gas.

9. The method of claim 8 wherein the three deposition and anneal cycles are used to fill gaps between the plurality of optical cores of the PLC.

10. The method of claim 7 wherein the second top cladding layer deposition process comprises a single deposition and anneal cycle using the low flow rate of the Boron dopant gas.

11. The method of claim 7 wherein the low Boron portion is configured to cover the high Boron portion to protect the high Boron portion from corrosion.

12. The method of claim 7, wherein the Boron dopant gas comprises B₂H₆ or B(OCH₃)₃ tetramethyl borate (TMB).

13. The method of claim 8, wherein the high flow rate of the Boron dopant gas during the first top cladding layer deposition process is configured to reduce a number of deposition and anneal cycles required for gap filling.

14. The method of claim 7, wherein the low flow rate of the Boron dopant gas during the second top cladding layer deposition process is configured to reduce chip edge corrosion of the planar lightwave circuit.

15. A dual layer top clad for an optical waveguide of a planar lightwave circuit (PLC) comprising a top clad layer having a high Boron portion covering a plurality of optical cores of the PLC and a low Boron portion covering the high Boron portion protecting the high Boron portion from corrosion.

16. The top clad layer of claim 15 wherein a weight percentage of Boron dopant of the high Boron portion is no more than 7 wt %.

17. The top clad layer of claim 15 wherein a weight percentage of Boron dopant of the low Boron portion is no more than 5.5 wt %.