Pupil filtering for a lithographic tool

• US 6,555,274 B1
• Filed: 02/01/2001
• Issued: 04/29/2003
• Est. Priority Date: 02/01/2001
• Status: Expired due to Fees

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Kye, Jongwook, La Fontaine, Bruno M.
• Primary Examiner(s): ROSASCO, STEPHEN D
• Application Number:
  US09/775,062
• Time in Patent Office: 817 Days
• Field of Search: 430/5, 430/322, 359/559, 359/589, 359/590
• US Class Current: 430/5
• CPC Class Codes: G03F 1/50 Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
• CPC Class Codes: G03F 7/70283 Mask effects on the imaging process
• CPC Class Codes: G03F 7/70308 Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift

Abstract

A mask or reticle is optimized for use in a lithographic system. The mask or reticle includes a substrate and a pupil filter pattern. The substrate includes an IC pattern representing at least one integrated circuit feature. The pupil filter pattern can enhance the resolution associated with the lithographic system.

Claims

1. A mask or reticle for use in a lithographic system, the mask or reticle comprising:

a substrate including an integrated circuit (IC) pattern representing at least one integrated circuit feature and a pupil filter pattern.

2. The mask or reticle of claim 1, wherein the IC pattern is on a first surface of the substrate and the pupil filter pattern is on a second surface of the substrate, the first surface being opposite the second surface.

3. The mask or reticle of claim 1, wherein the IC pattern is a first surface of the substrate and the pupil filter pattern is disposed over the IC pattern on the first surface.

4. The mask or reticle of claim 1, wherein the pupil pattern is on a first surface of the substrate and the IC pattern is over the pupil pattern on the first surface.

5. The mask or reticle of claim 1, wherein the pupil filter pattern is a Fourier transform of a shape of a pupil filter at a pupil plane associated with the lithographic system.

6. The mask or reticle of claim 1, wherein the IC pattern is any critical layer pattern.

7. The mask or reticle of claim 1, wherein the pupil pattern is a metal pattern.

8. The mask or reticle of claim 1, wherein the substrate is a quartz substrate.

9. A method of enhancing resolution of a lithographic system, the lithographic system including a pupil, the method comprising:

providing a mask or reticle having an integrated circuit (IC) pattern; and

providing a pupil filter pattern on the mask or reticle.

10. The method of claim 9, wherein the pupil filter pattern is a Fourier transform of a shape of a pupil filter at the pupil plane.

11. The method of claim 9, wherein the second providing step includes providing the pupil filter pattern by etching a dielectric layer on a surface of the mask or reticle.

12. The method of claim 9, wherein the mask or reticle includes an IC pattern formed by a chromium layer.

13. The method of claim 9, wherein the pupil filter pattern is etched into the mask or reticle.

14. The method of claim 9, wherein the pupil filter pattern includes a grating pattern or a bull'"'"'s eye pattern.

15. A lithographic system for use in integrated circuit fabrication, the lithographic system including lens assemblies represented by a pupil, the lithographic system comprising:

a mask means for patterning radiation according to an integrated circuit pattern; and

a pupil filter means for patterning radiation in accordance with a Fourier transform of a hypothetical pupil filter located at a pupil plane.

16. The lithographic system of claim 15, wherein the pupil filter means is etched into a substrate of the mask means.

17. The lithographic system of claim 15, wherein the radiation is provided at a wavelength below 450 nm.

18. The lithographic system of claim 15, wherein the pupil filter means includes a bull'"'"'s-eye pattern.

19. The lithographic system of claim 15, wherein the mask means includes a chromium or chromium oxide or MoSiON pattern.

20. The lithographic system of claim 15, wherein the pupil filter means is provided over the mask means.