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Devices and methods for addressing optical edge effects in connection with etched trenches

  • US 6,555,895 B1
  • Filed: 07/17/2000
  • Issued: 04/29/2003
  • Est. Priority Date: 07/17/2000
  • Status: Expired due to Fees
First Claim
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1. A modified semiconductor substrate comprising:

  • semiconductor substrate;

    at least one buffer layer provided over at least a portion of said substrate; and

    a plurality of trenches comprising (a) a plurality of internal trenches that extend into said semiconductor substrate and (b) at least one shallow peripheral trench that extends into said at least one buffer layer but does not extend into the semiconductor substrate, wherein said at least one buffer layer is provided over said semiconductor substrate in the area of said at least one shallow peripheral trench and no buffer layer is provided over said semiconductor substrate in the area of said plurality of internal trenches.

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