Semiconductor device including eutectic bonding portion and method for manufacturing the same
First Claim
1. A semiconductor device comprising:
- a first substrate having a surface portion made of silicon;
a second substrate bonded to the first substrate;
an eutectic portion of silicon and gold interposed between the first and second substrates to directly contact the surface portion of the first substrate at a first surface thereof and containing an oxide of metal that has deoxidized silicon oxide, the oxide of metal existing in the eutectic portion apart from the first substrate; and
a gold layer interposed between the eutectic portion and the second substrate and directly contacting a second surface of the eutectic portion on an opposite side of the first substrate.
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Accused Products
Abstract
A sensing element is formed on a silicon (Si) substrate and covered with a cap. The cap has a leg portion having a titanium layer and a gold layer formed in that order on the lower surface thereof. The silicon substrate has an Si bonding frame at a position corresponding to the leg portion. When bonding the Si bonding frame of the silicon substrate and the leg portion of the cap, the titanium layer deoxidizes a naturally oxidized silicon layer formed on the Si bonding frame, whereby the silicon substrate and the cap can be uniformly bonded together with an Au/Si eutectic portion interposed therebetween. In this case, the Au/Si eutectic portion includes a titanium oxide accompanying the deoxidization of the naturally oxidized silicon layer.
318 Citations
7 Claims
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1. A semiconductor device comprising:
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a first substrate having a surface portion made of silicon;
a second substrate bonded to the first substrate;
an eutectic portion of silicon and gold interposed between the first and second substrates to directly contact the surface portion of the first substrate at a first surface thereof and containing an oxide of metal that has deoxidized silicon oxide, the oxide of metal existing in the eutectic portion apart from the first substrate; and
a gold layer interposed between the eutectic portion and the second substrate and directly contacting a second surface of the eutectic portion on an opposite side of the first substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7)
the first substrate is bonded to the second substrate only at the surface portion thereof; and
the eutectic portion directly contacts the entire surface portion.
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6. A semiconductor device according to claim 1, wherein the first substrate and the second substrate are bonded to each other only through a non-insulating part including the eutectic portion and the gold layer.
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7. A semiconductor device according to claim 4, wherein the first substrate and the second substrate are bonded to each other permanently through the eutectic portion.
Specification