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Semiconductor device including eutectic bonding portion and method for manufacturing the same

  • US 6,555,901 B1
  • Filed: 10/03/1997
  • Issued: 04/29/2003
  • Est. Priority Date: 10/04/1996
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a first substrate having a surface portion made of silicon;

    a second substrate bonded to the first substrate;

    an eutectic portion of silicon and gold interposed between the first and second substrates to directly contact the surface portion of the first substrate at a first surface thereof and containing an oxide of metal that has deoxidized silicon oxide, the oxide of metal existing in the eutectic portion apart from the first substrate; and

    a gold layer interposed between the eutectic portion and the second substrate and directly contacting a second surface of the eutectic portion on an opposite side of the first substrate.

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