Acoustic wave device and process for forming the same
First Claim
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1. An acoustic wave device comprising:
- a monocrystalline silicon substrate;
an MOS circuit formed at least partially in the silicon substrate;
a monocrystalline perovskite layer epitaxially formed overlying the silicon substrate;
an amorphous interface layer formed underlying the monocrystalline perovskite layer;
a layer of monocrystalline piezoelectric material having a surface epitaxially formed overlying the monocrystalline perovskite layer;
a transducer formed on the surface of the layer of monocrystalline piezoelectric material; and
an interconnection coupling the MOS circuit and the transducer.
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Abstract
High quality epitaxial layers of piezoelectric material materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.
391 Citations
26 Claims
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1. An acoustic wave device comprising:
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a monocrystalline silicon substrate;
an MOS circuit formed at least partially in the silicon substrate;
a monocrystalline perovskite layer epitaxially formed overlying the silicon substrate;
an amorphous interface layer formed underlying the monocrystalline perovskite layer;
a layer of monocrystalline piezoelectric material having a surface epitaxially formed overlying the monocrystalline perovskite layer;
a transducer formed on the surface of the layer of monocrystalline piezoelectric material; and
an interconnection coupling the MOS circuit and the transducer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A bulk acoustic wave device comprising:
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a monocrystalline silicon substrate;
an MOS circuit formed at least partially in the silicon substrate;
a monocrystalline perovskite layer epitaxially formed overlying the silicon substrate;
a monocrystalline conductive oxide layer epitaxially formed overlying the monocrystalline perovskite layer;
a layer of monocrystalline piezoelectric material epitaxially formed overlying the monocrystalline conductive oxide layer; and
a conductive electrode formed overlying the layer of monocrystalline piezoelectric material. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A bulk acoustic wave device comprising:
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a monocrystalline silicon substrate having a front surface and a rear surface;
a MOS circuit formed at least partially in the silicon substrate;
a monocrystalline perovskite layer epitaxially formed overlying the front surface of the silicon substrate;
a layer of monocrystalline piezoelectric material epitaxially formed overlying the monocrystalline perovskite layer, the layer of monocrystalline piezoelectric material having an upper surface and a lower surface, the lower surface facing the monocrystalline perovskite layer;
a concave recess etched in the rear surface of the silicon substrate and extending through the monocrystalline substrate;
a first conductive electrode contacting the lower surface of the monocrystalline piezoelectric material; and
a second conductive electrode contacting the upper surface of the layer of monocrystalline piezoelectric material. - View Dependent Claims (25)
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26. An acoustic wave device comprising:
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a monocrystalline silicon substrate;
a MOS circuit formed at least partially in the silicon substrate;
a first monocrystalline layer comprising (Sr,Ba)TiO3 epitaxially formed overlying the silicon substrate;
an amorphous silicon oxide interface layer formed underlying the first monocrystalline layer;
a second monocrystalline layer comprising (Pb,Zr)TiO3 having a surface epitaxially formed overlying the first monocrystalline layer;
an interdigitated transducer formed on the surface; and
interconnect metallization coupling the MOS circuit and the interdigitated transducer.
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Specification