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Acoustic wave device and process for forming the same

  • US 6,555,946 B1
  • Filed: 07/24/2000
  • Issued: 04/29/2003
  • Est. Priority Date: 07/24/2000
  • Status: Expired due to Fees
First Claim
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1. An acoustic wave device comprising:

  • a monocrystalline silicon substrate;

    an MOS circuit formed at least partially in the silicon substrate;

    a monocrystalline perovskite layer epitaxially formed overlying the silicon substrate;

    an amorphous interface layer formed underlying the monocrystalline perovskite layer;

    a layer of monocrystalline piezoelectric material having a surface epitaxially formed overlying the monocrystalline perovskite layer;

    a transducer formed on the surface of the layer of monocrystalline piezoelectric material; and

    an interconnection coupling the MOS circuit and the transducer.

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