Zero TCF thin film resonator

• US 6,557,419 B1
• Filed: 12/31/1996
• Issued: 05/06/2003
• Est. Priority Date: 12/31/1996
• Status: Expired due to Fees

• Current Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Original Assignee: Honeywell International Inc.
• Inventors: Burns, David W., Youngner, Daniel W., Herb, William R.
• Primary Examiner(s): RAEVIS, ROBERT R
• Application Number:
  US08/777,652
• Time in Patent Office: 2,317 Days
• Field of Search: 737/08, 737/66, 737/78, 738/624.1, 738/625.9, 737/02, 737/04, 735/142.9, 733/24, 738/626.23, 738/626.32, 738/626.34, 738/626.37, 735/142--51, 735/143.6
• US Class Current: 73/766
• CPC Class Codes: B81B 2201/0271 Resonators; ultrasonic resonators
• CPC Class Codes: B81B 3/0072 For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
• CPC Class Codes: H03H 9/02448 of temperature influence
• CPC Class Codes: H03H 9/2463 Clamped-clamped beam resonators
• CPC Class Codes: H03H 9/2473 Double-Ended Tuning Fork [DETF] resonators

Abstract

A multi-material resonant thin film beam for a micromechanical sensor having a zero temperature coefficient of frequency (TCF) which is the resonant frequency shift with temperature change. One of the materials may be polysilicon and the other material may be silicon nitride or silicon oxide. Each material has a different thermal coefficient of expansion. The proportion of the various materials is adjusted and the specific geometries are determined so that the TCF is zero. One embodiment is a microbeam composed of two polysilicon thin films with a silicon nitride thin film inserted between the polysilicon films. The thickness of the silicon nitride film may be adjusted to trim the TCF to zero. The film of nitride instead may be placed on one side of a polysilicon film to form a beam. Dual or multiple beam resonators likewise may be made with several materials. The nitride may be placed in the shank areas which join and secure the ends of the beams. Such zero TCF beams may be incorporated in microsensor structures for measuring pressure, temperature, strain and other parameters.

Claims

1. A thin film microbeam comprising:

a first film composed of a first material having a first thermal coefficient of expansion; and

a second film composed of a second material having a second and different thermal coefficient of expansion, formed on said first film;

the relative dimensions of the first and second films are such that a resonant frequency of said microbeam is effectively temperature invariant.

2. The thin film microbeam of claim 1 wherein said microbeam has at least one end secured to a place so that said microbeam can vibrate at a resonant frequency relative to the place.

3. The thin film microbeam of claim 2 wherein:

the first material is polysilicon; and

the second material is selected from the group consisting of silicon nitride and silicon oxide.

4. A thin film microbeam comprising:

a first thin film having a first material having a first thermal coefficient of expansion;

a second thin film having a second material having a second, different thermal coefficient of expansion, formed on said first thin film; and

a third thin film having the first material formed on said second thin film;

the geometries and dimensions of the first, second and third films are such that the combination of the thin films having different coefficients of expansion result in the microbeam having a composite thermal coefficient of expansion such that the beam has a resonant frequency that does not vary with a change in temperature of the microbeam.