Perforated work piece, and method for producing it

• US 6,558,770 B1
• Filed: 11/08/2000
• Issued: 05/06/2003
• Est. Priority Date: 05/08/1998
• Status: Expired due to Term

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Stengel, Reinhard, Wendt, Hermann, Lehmann, Volker, Lange, Gerrit, Ottow, Stefan, Reisinger, Hans
• Primary Examiner(s): Watkins, III, William P.
• Application Number:
  US09/708,277
• Time in Patent Office: 909 Days
• Field of Search: 428/138, 428/131, 428/688, 205/665
• US Class Current: 428/138
• CPC Class Codes: C25F 3/02 Etching
• CPC Class Codes: H01P 1/20 Frequency-selective devices, e.g. filters
• CPC Class Codes: Y10T 428/24273 including aperture
• CPC Class Codes: Y10T 428/24331 including nonapertured component

Abstract

A substrate made from silicon has a first region and a second region. Through pores are formed in the first region. Pores that do not traverse the substrate are provided in the second region. The production of the work piece is performed with the aid of electrochemical etching of the pores. The entire surface of the substrate is covered with a mask layer that is structured photolithographically on the rear of the substrate. The bottoms of the pores in the second region are etched clear, preferably using KOH.

Claims

1. A perforated work piece, comprising:

a substrate made from silicon and having a first region, a second region, a first main surface and a second main surface, said first region having pores formed therein which traverse said substrate from said first main surface to said second main surface, and said second region having further pores formed therein which, starting from said first main surface, extend into said substrate but do not traverse said substrate.

2. The work piece according to claim 1, wherein in a region of said second main surface, said second region has an edge region having a surface with <

111>

orientation.

3. The work piece according to claim 1, wherein said pores have a first depth and said further pores have a second depth substantially equal to said first depth of said pores, and said substrate is thicker in said second region in a direction of a pore depth than in said first region.

4. A method for producing a perforated work piece, which comprises the steps of:

providing a substrate formed of silicon and having a first main surface, a second main surface opposite the first main surface, a first region, a second region, and a given thickness;

electrochemical etching pores in the first main surface of the substrate having a depth less than the given thickness of the substrate;

applying a mask layer to the first main surface, to a surface of the pores, and to the second main surface;

structuring the mask layer in a region of the second main surface such that the second main surface is exposed in the first region resulting in a structured mask layer;

etching the substrate at least as far as a bottom of the pores using the structured mask layer as an etching mask; and

removing the mask layer such that the pores disposed in the first region traverse the substrate from the first main surface to the second main surface.

5. The method according to claim 4, which comprises forming the mask layer from Si₃N₄.

6. The method according to claim 4, which comprises performing the electrochemical etching of the substrate with KOH.

7. The method according to claim 4, which comprises performing the electrochemical etching in a fluoride-containing acid electrolyte, the substrate being connected as an anode of an electrolytic cell.

8. The method according to claim 7, which comprises:

providing the fluoride-containing acid electrolyte with a concentration of between 2 percent by weight of hydrofluoric acid and 10 percent by weight of the hydrofluoric acid; and

applying a voltage of between 1.5 volts and 3 volts during the electrochemical etching.

9. The method according to claim 4, which comprises illuminating the second main surface of the substrate during the electrochemical etching for setting a current density in the substrate.