Subresolution grating for attenuated phase shifting mask fabrication

• US 6,558,856 B2
• Filed: 07/30/2001
• Issued: 05/06/2003
• Est. Priority Date: 01/08/1998
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Pierrat, Christophe
• Primary Examiner(s): ROSASCO, STEPHEN D
• Application Number:
  US09/918,064
• Publication Number:
  US 20010044057A1
• Time in Patent Office: 645 Days
• Field of Search: 430/5, 430/322, 250/226, 354/888
• US Class Current: 430/5
• CPC Class Codes: G03F 1/26 Phase shift masks [PSM]; PSM blanks; Preparation thereof
• CPC Class Codes: G03F 1/32 Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion,; Preparation thereof
• CPC Class Codes: G03F 7/001 Phase modulating patterns, e.g. refractive index patterns

Abstract

A subresolution grating composed of approximately circular contacts is fabricated around the border of the primary pattern of a photomask. As a result, resolution at the edges of the photomask pattern is improved when the pattern is printed on a wafer surface. In addition, the reduced leakage enables a more efficient use of the glass plate on which the photomask is fabricated as well as a more efficient use of the wafer surface as a result of being able to place patterns closer together.

Claims

1. A method of fabricating a photomask, comprising:

preparing a plate;

transferring a primary pattern onto the plate, the primary pattern including an edge circumscribing the primary pattern; and

fabricating a plurality of approximately round contacts in the edge of the primary pattern.

2. A photomask, comprising:

a photolithographic pattern;

a border outlining the pattern; and

a plurality of approximately circular contacts in the border outlining the pattern.

3. A photomask, comprising:

a photolithographic, phase-shifting pattern formed with attenuating material, including a border circumscribing the phase-shifting pattern;

a plurality of octagonal contacts formed in the border.

4. A method of fabricating a photomask, comprising the steps of:

preparing a glass plate;

transferring a pattern onto the glass plate, the pattern including a circumscribing edge; and

fabricating a plurality of approximately round contacts in the edge.

5. The method of claim 4, wherein fabricating a plurality of approximately round contacts comprises forming octagonal contacts.

6. The method of claim 4, wherein transferring the primary pattern comprises selectively depositing attenuating material.

33. A semiconductor die made using a process that includes the photomask of claim 4.

7. A method of fabricating a photomask, comprising:

preparing a transparent plate;

selectively depositing attenuating material on the transparent plate to form a pattern, the pattern including an edge circumscribing the pattern; and

fabricating a plurality of octagonal contacts in the edge.

8. The method of claim 7, wherein preparing the transparent plate includes preparing a glass plate.

9. The method of claim 7, wherein selectively depositing attenuating material includes depositing opaque chrome.

34. A semiconductor die made using a process that includes the photomask of claim 7.

10. A photomask, comprising:

a pattern;

a border outlining the pattern; and

a plurality of approximately circular contacts in the border outlining the pattern.

11. The photomask of claim 10, wherein the pattern and the border are composed of attenuating phase-shifting material.

12. The photomask of claim 10, wherein the plurality of approximately circular contacts are octagonal.

13. The photomask of claim 10, wherein the plurality of approximately circular contacts are subresolution in size.

14. A photomask produced by a method, comprising:

preparing a plate;

selectively depositing attenuating material on the plate to form a pattern, the primary pattern including an edge circumscribing the pattern; and

fabricating a plurality of octagonal contacts in the edge of the pattern.

15. A subresolution grating, comprising:

a border outlining a pattern of a photomask; and

a plurality of approximately circular contacts in the border outlining the pattern.

16. The subresolution grating of claim 15, wherein the plurality of approximately circular contacts are octagonal.

17. The subresolution grating of claim 15, wherein the plurality of approximately circular contacts are subresolution in size.

18. A photomask, comprising:

a pattern; and

a diffraction grating about the pattern, the diffraction grating including contact shapes approximating a circle, the contact shapes being less than 0.11 microns in diameter.

19. The photomask of claim 18, wherein the contact shapes are substantially octagonal.

20. A photomask, comprising:

a pattern; and

a diffraction grating outside the pattern, the diffraction grating having octagonal contacts each with a diameter, the octagonal contacts being separated from each other by a distance substantially equal to the diameter.

21. The photomask of claim 20, wherein the diameter is less than 0.11 microns.

22. The photomask of claim 20, wherein the diameter is subresolution.

23. A photomask, comprising:

a pattern; and

a diffraction grating outside the pattern, the diffraction grating including approximately circular contacts having substantially equal diameters and distances therebetween, the diameters and distances being less than 0.11 microns.

24. The photomask of claim 23, wherein the diffraction grating comprises absorptive material.

25. A method of fabricating a border surrounding a photomask pattern, comprising depositing a pattern of attenuating material in the border of a photomask, the pattern including substantially circular contact shapes having a diameter of less than 0.11 micron.

26. The method of claim 25, wherein the substantially circular contact shapes have a diameter, and distance between the substantially circular contact shapes is substantially equal to the diameter.

27. A method of fabricating a border surrounding a photomask pattern, comprising depositing a pattern of attenuating material in the border of a photomask, the pattern including contact shapes that approximate a circle having a diameter of less than 0.11 micron.

28. The method of claim 27, wherein the diameter of the contact shapes is approximately equal to a distance between contact shapes.

29. A method of fabricating a border surrounding a photomask pattern, comprising depositing a pattern of attenuating material in the border of the photomask, the pattern including octagonal contact shapes.

30. The method of claim 29, wherein depositing comprises depositing a pattern of octagonal shapes having a diameter and a separation distance, the diameter and separation distance being substantially equal.

31. A method of projecting a pattern on a wafer comprising projecting light through a photomask having a diffraction grating about a perimeter of a pattern, the diffraction grating comprising octagonal contacts.

32. The method of claim 31, wherein the octagonal contacts have a diameter and a distance therebetween, the diameter and the distance being substantially equal.