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Dual silicon-on-insulator device wafer die

  • US 6,558,994 B2
  • Filed: 03/01/2001
  • Issued: 05/06/2003
  • Est. Priority Date: 03/01/2001
  • Status: Expired due to Fees
First Claim
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1. A method for making a silicon-on-insulator semiconductor device comprising:

  • providing a semiconductor substrate;

    depositing an insulator layer on the semiconductor substrate;

    forming an opening in the insulator layer;

    forming an insulator structure in a portion of the opening on the semiconductor substrate;

    forming silicon on the insulator structure and the insulator layer;

    forming openings in the silicon to form silicon islands;

    depositing insulator in the openings;

    forming gate insulators on the silicon islands; and

    forming junctions in the silicon islands.

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