Photovoltaic devices and compositions for use therein

• US 6,559,372 B2
• Filed: 09/20/2001
• Issued: 05/06/2003
• Est. Priority Date: 09/20/2001
• Status: Expired due to Term

• Current Assignee: HelioVolt Corporation
• Original Assignee: HelioVolt Corporation
• Inventors: Stanbery, Billy J.
• Primary Examiner(s): DIAMOND, ALAN D
• Application Number:
  US09/957,121
• Publication Number:
  US 20030052382A1
• Time in Patent Office: 593 Days
• Field of Search: 136/264, 136/265, 136/252, 136/262, 136/256, 257/431, 257/184
• US Class Current: 136/252
• CPC Class Codes: H01L 31/0322 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
• CPC Class Codes: Y02E 10/541 CuInSe2 material PV cells

Abstract

Systems and methods are described for compositions, apparatus and/or electronic devices. A composition, includes a composition layer defining a first surface and a second surface, the composition layer including a collection layer that is located closer to the first surface than to the second surface. An apparatus, includes a semiconductor absorber layer defining a first surface and a second surface; and an electrode layer coupled to the first surface of the semiconductor absorber layer, wherein the semiconductor absorber layer includes a collection layer that is located closer to the first surface than to the second surface. A electronic device includes a semiconductor structure for absorbing, the semiconductor structure for absorbing defining a first surface and a second surface; and an electrode structure for conducting coupled to the second surface of the semiconductor structure, where the semiconductor structure includes a collection layer that is located closer to the first surface than to the second surface.

Claims

1. An apparatus, comprising

a semiconductor absorber layer defining a first surface and a second surface;

and

an electrode layer coupled to the first surface of the semiconductor absorber layer,

wherein the semiconductor absorber layer includes a collection layer that is located closer to the first surface than to the second surface,

wherein the collection layer includes a sodium impurity containing layer,

wherein the sodium impurity containing layer includes sodium containing precipitates and

wherein the sodium containing precipitates include NaInSe₂.

2. An apparatus, comprising a semiconductor absorber layer defining a first surface and a second surface;

and

an electrode layer coupled to the first surface of the semiconductor absorber layer,

wherein the semiconductor absorber layer includes a collection layer that is located closer to the first surface than to the second surface and

wherein the collection layer includes a copper impurity containing layer.

3. The apparatus of claim 2, wherein the copper impurity containing layer includes copper containing precipitates.

4. The apparatus of claim 3, wherein the copper containing precipitates include Cu₂Se.

5. An electronic device, comprising:

a semiconductor means for absorbing, the semiconductor means for absorbing defining a first surface and a second surface; and

an electrode means for conducting coupled to the first surface of the semiconductor means,

wherein the semiconductor means includes a collection layer that is located closer to the first surface than to the second surface,

wherein the collection layer includes a sodium impurity containing layer,

wherein the sodium impurity containing layer includes sodium containing precipitates and

wherein the sodium containing precipitates include NaInSe₂.

6. An electronic device, comprising:

a semiconductor means for absorbing, the semiconductor means for absorbing defining a first surface and a second surface; and

an electrode means for conducting coupled to the first surface of the semiconductor means,

wherein the semiconductor means includes a collection layer that is located closer to the first surface than to the second surface and

wherein the collection layer includes a copper impurity containing layer.

7. The electronic device of claim 6, wherein the copper impurity containing layer includes copper containing precipitates.

8. The electronic device of claim 7, wherein the copper containing precipitates include Cu₂Se.