Display type image sensor

• US 6,559,433 B1
• Filed: 04/29/1999
• Issued: 05/06/2003
• Est. Priority Date: 09/01/1997
• Status: Expired due to Term

• Current Assignee: 138 East LCD Advancements Limited (Vector Capital Corporation)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Ozawa, Tokuroh
• Primary Examiner(s): LE, QUE TAN
• Application Number:
  US09/297,287
• Time in Patent Office: 1,468 Days
• Field of Search: 250/208.1, 250/214.R, 250/214.1, 345/6-10, 345/92, 345/87, 345/100, 348/272, 348/281, 348/294, 348/301, 348/302, 348/307, 348/308, 257/291, 257/292, 257/440
• US Class Current: 250/208.1
• CPC Class Codes: G06F 3/0412 Digitisers structurally integrated in a display
• CPC Class Codes: G06F 3/042 by opto-electronic means
• CPC Class Codes: G09G 2300/0426 Layout of electrodes and connections
• CPC Class Codes: G09G 2300/0842 forming a memory circuit, e.g. a dynamic memory with one capacitor
• CPC Class Codes: G09G 3/2074 using sub-pixels
• CPC Class Codes: G09G 3/3225 using an active matrix
• CPC Class Codes: G09G 3/3233 with pixel circuitry controlling the current through the light-emitting element
• CPC Class Codes: G09G 3/3258 with pixel circuitry controlling the voltage across the light-emitting element
• CPC Class Codes: G09G 3/3291 in which the data driver supplies a variable data voltage for setting the current through, or the voltage across, the light-emitting elements
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14623 Optical shielding
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H04N 1/00129 with a display device, e.g. CRT or LCD monitor with a television apparatus H04N1/00283; arrangements for control of display devices G09G
• CPC Class Codes: H04N 1/028 for picture information pick-up
• CPC Class Codes: H04N 1/02805 with photodetectors arranged in a two-dimensional array
• CPC Class Codes: H04N 25/00 Circuitry of solid-state image sensors [SSIS]; Control thereof
• CPC Class Codes: H04N 25/76 Addressed sensors, e.g. MOS or CMOS sensors
• CPC Class Codes: H04N 3/14 by means of electrically scanned solid-state devices for picture generation H04N25/00
• CPC Class Codes: H04N 3/155 Control of the image-sensor operation, e.g. image processing within the image-sensor
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/122 : Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/131 : Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/65 : OLEDs integrated with inorganic image sensors

Abstract

A display type image sensor using thin-film photoelectric conversion elements that function as light emitting elements and light receiving elements so that the sensor can be used both as an active matrix display and as an image sensor, wherein pixels (PX) arranged in matrix each comprise: a first pixel portion (PXA) having a first conduction control circuit (SWA) supplied with a scan signal through a scan line (gate) and a first thin-film photoelectric conversion element (11A) which can emit and receive light and connects to a first interconnect (D21) and a second interconnect (D22) through the first conduction control circuit (SWA); and a second pixel portion (PXB) having a second conduction control circuit (SWB) supplied with a scan signal through the same scan line (gate) and a second thin-film photoelectric conversion element (11B) which can emit and receive light and connects to the first interconnect (D21) and a third interconnect (D23) through the second conduction control circuit (SWB).

Claims

1. An image sensor apparatus having an additional display device function, the apparatus including a plurality of pixels arranged in matrix, scanning lines supplied with a scanning signal for selecting the pixels in sequence, and a first wiring, a second wiring and a third wiring used as signal lines when light emission or light reception is performed by the pixels selected by said scanning signal, each of said pixels comprising:

a first pixel section including a first conduction control circuit supplied with said scanning signal through said scanning line, and a first thin-film optoelectronic transducer that performs light emission or light reception, connected to said first wiring and said second wiring via the first conduction control circuit; and

a second pixel section including a second conduction control circuit supplied with said scanning signal through said scanning line, and a second thin-film optoelectronic transducer that performs light emission or light reception, connected to said first wiring and said third wiring via the second conduction control circuit.

2. The image sensor apparatus having an additional display device function according to claim 1, said first conduction control circuit and said second conduction control circuit each being composed of a thin-film transistor having a gate electrode, a source region and a drain region, and being supplied with said scanning signal to the gate electrode,

said thin-film transistor of said first conduction control circuit being connected at one of the source region and the drain region to said second wiring and connected at another of the source region and the drain region to a pixel electrode of said first thin-film optoelectronic transducer, and

said thin-film transistor of said second conduction control circuit being connected at one of the source region and the drain region to said third wiring and connected at another of the source region and the drain region to a pixel electrode of said second thin-film optoelectronic transducer.

3. The image sensor apparatus having an additional display device function according to claim 2, further comprising a switching circuit that controls connection to the first wiring, the second wiring and the third wiring such that,

when one of said first thin-film optoelectronic transducer and said second thin-film optoelectronic transducer is used as a light-emitting element, one wiring of said second wiring and said third wiring to which the one thin-film optoelectronic transducer is connected to an output circuit for a switch on/off control signal,

when said one thin-film optoelectronic transducer is used as a light-receiving element, the one wiring of said second wiring and said third wiring to which the one thin-film optoelectronic transducer is connected to a photoelectric current detection circuit, and

said first wiring is connected to a constant-voltage power source.

4. The image sensor apparatus having an additional display device function according to claim 1, said first conduction control circuit and said second conduction control circuit respectively comprising:

a first thin-film transistor having a gate electrode supplied with said scanning signal, and

a second thin-film transistor having a gate electrode connected to said first wiring through the first thin-film transistor,

said second thin-film transistor of said first conduction control circuit further having one of a source region and a drain region connected to said second wiring and another of the source region and the drain region connected to a pixel electrode of said first thin-film optoelectronic transducer, and

said second thin-film transistor of said second conduction control circuit further having one of a source region and a drain region connected to said third wiring and another of the source region and the drain region connected to a pixel electrode of said second thin-film optoelectronic transducer.

5. The image sensor apparatus having an additional display device function according to claim 4, further comprising a switching circuit that controls connection to the first wiring, the second wiring and the third wiring such that,

when one of said first thin-film optoelectronic transducer and said second thin-film optoelectronic transducer is used as a light-emitting element, one wiring of said second wiring and third wiring to which the one thin-film optoelectronic transducer is connected is connected to a constant-voltage power source,

when said one thin-film optoelectronic transducer is used as a light-receiving element, the one wiring of said second wiring and said third wiring to which the one thin-film optoelectronic transducer is connected is connected to a photoelectric current detection circuit, and

said first wiring is connected to an output circuit for receiving a signal for controlling a conduction state of said second thin-film transistor.

6. The image sensor apparatus having an additional display device function according to claim 1, a formation area of a pixel electrode of said first thin-film optoelectronic transducer and a formation area of a pixel electrode of said second thin-film optoelectronic transducer being intermingled with each other.

7. The image sensor apparatus having an additional display device function according to claim 1, a formation area of a pixel electrode of said first thin-film optoelectronic transducer and a formation area of a pixel electrode of said second thin-film optoelectronic transducer having a center-of-gravity position and being provided such that the center-of-gravity position of both are close to each other in comparison with a construction in which an outer frame of each pixel electrode is partitioned by a straight line.

8. The image sensor apparatus having additional display device function according to claim 1, a formation area of a pixel electrode of said first thin-film optoelectronic transducer being surrounded by a formation area of a pixel electrode of said second thin-film optoelectronic transducer.

10. The image sensor apparatus having an additional display device function according to claim 1, further comprising a light-shielding layer formed between a pixel electrode of said first thin-film optoelectronic transducer and a pixel electrode of said second thin-film optoelectronic transducer.

9. An image sensor apparatus having an additional display device function, the apparatus including a plurality of pixels arranged in matrix, scanning lines supplied with a scanning signal for selecting the pixels in sequence, and a first wiring, a second wiring and a third wiring used as signal lines when light emission or light reception is performed by the pixels selected by said scanning signal, each of said pixels comprising:

a first pixel section including a first conduction control circuit supplied with said scanning signal through said scanning line, and a first thin-film optoelectronic transducer that performs light emission or light reception, connected to said first wiring and said second wiring via the first conduction control circuit; and

a second pixel section including a second conduction control circuit supplied with said scanning signal through said scanning line, and a second thin-film optoelectronic transducer that performs light emission or light reception, connected to said first wiring and said third wiring via the second conduction control circuit, a center-of-gravity of a formation area of a pixel electrode of said first thin-film optoelectronic transducer and a center-of-gravity of a formation area of a pixel electrode of said second thin-film optoelectronic transducer being sufficiently close to each other in comparison with a size of each pixel electrode.

11. The image sensor apparatus having an additional display device function according to claim 9, further comprising a light-shielding layer formed between the pixel electrode of said first thin-film optoelectronic transducer and the pixel electrode of said second thin-film optoelectronic transducer.

12. An active matrix display device including a plurality of pixels arranged in matrix, scanning lines supplied with a scanning signal for selecting the pixels in sequence, and a first wiring, a second wiring and a third wiring used as signal lines when light emission or light reception is performed by the pixels selected by said scanning signal, each of said pixels comprising:

a first pixel section including a first conduction control circuit supplied with said scanning signal through said scanning line, and a first thin-film optoelectronic transducer that performs light emission or light reception, connected to said first wiring and said second wiring via the first conduction control circuit; and

a second pixel section including a second conduction control circuit supplied with said scanning signal through said scanning line, and a second thin-film optoelectronic transducer that performs light emission or light reception, connected to said first wiring and said third wiring via the second conduction control circuit.

13. The active matrix display device according to claim 12, said first conduction control circuit and said second conduction control circuit are each composed of a thin-film transistor having a gate electrode, a source region and a drain region, and being supplied with said scanning signal to the gate electrode,

said thin-film transistor of said first conduction control circuit is connected at one of the source region and the drain region to said second wiring and connected at another of the source region and the drain region to a pixel electrode of said first thin-film optoelectronic transducer, and

said thin-film transistor of said second conduction control circuit is connected at one of the source region an d the drain region to said third wiring and connected at another of the source region and the drain region to a pixel electrode of said second thin-film optoelectronic transducer.

14. The active matrix display device according to claim 13, further comprising a switching circuit that controls connection to the first wiring, the second wiring and the third wiring such that,

when one of said first thin-film optoelectronic transducer and said second thin-film optoelectronic transducer is used as a light-emitting element, one wiring of said second wiring and said third wiring to which the one thin-film optoelectronic transducer is connected to an output circuit for a switch on/off control signal,

when said one thin-film optoelectronic transducer is used as a light-receiving element, the one wiring of said second wiring and said third wiring to which the one thin-film optoelectronic transducer is connected to a photoelectric current detection circuit, and

said first wiring is connected to a constant-voltage power source.

15. The active matrix display device according to claim 12, said first conduction control circuit and said second conduction control circuit respectively comprising:

a first thin-film transistor having a gate electrode supplied with said scanning signal, and

a second thin-film transistor having a gate electrode connected to said first wiring through the first thin-film transistor,

said second thin-film transistor of said first conduction control circuit further having one of a source region and a drain region connected to said second wiring and another of the source region and the drain region connected to a pixel electrode of said first thin-film optoelectronic transducer, and

said second thin-film transistor of said second conduction control circuit further having one of a source region and a drain region connected to said third wiring and another of the source region and the drain region connected to a pixel electrode of said second thin-film optoelectronic transducer.

16. The active matrix display device according to claim 15, further comprising a switching circuit that controls connection to the first wiring, the second wiring and the third wiring such that,

when one of said first thin-film optoelectronic transducer and said second thin-film optoelectronic transducer is used as a light-emitting element, one wiring of said second wiring and third wiring to which the one thin-film optoelectronic transducer is connected is connected to a constant-voltage power source,

when said one thin-film optoelectronic transducer is used as a light-receiving element, the one wiring of said second wiring and said third wiring to which the one thin-film optoelectronic transducer is connected is connected to a photoelectric current detection circuit, and

said first wiring is connected to an output circuit for receiving a signal for controlling a conduction state of said second thin-film transistor.

17. The active matrix display device according to claim 12, a formation area of a pixel electrode of said first thin-film optoelectronic transducer and a formation area-of a pixel electrode of said second thin-film optoelectronic transducer being intermingled with each other.

18. The active matrix display device according to claim 12, a formation area of a pixel electrode of said first thin-film optoelectronic transducer and a formation area of a pixel electrode of said second thin-film optoelectronic transducer having a center-of-gravity position and being provided such that the center-of-gravity position of both are close to each other in comparison with a construction in which an outer frame of each pixel electrode is partitioned by a straight line.

19. The active matrix display device according to claim 12, a formation area of a pixel electrode of said first thin-film optoelectronic transducer being surrounded by a formation area of a pixel electrode of said second thin-film optoelectronic transducer.

21. The active matrix display device according to claim 12, further comprising a light-shielding layer formed between a pixel electrode of said first thin-film optoelectronic transducer and a pixel electrode of said second thin-film optoelectronic transducer.

20. An active matrix display device, including a plurality of pixels arranged in matrix, scanning lines supplied with a scanning signal for selecting the pixels in sequence, and a first wiring, a second wiring and a third wiring used as signal lines when light emission or light reception is performed by the pixels selected by said scanning signal, each of said pixels comprising:

a first pixel section including a first conduction control circuit supplied with said scanning signal through said scanning line, and a first thin-film optoelectronic transducer that performs light emission or light reception, connected to said first wiring and said second wiring via the first conduction control circuit; and

a second pixel section including a second conduction control circuit supplied with said scanning signal through said scanning line, and a second thin-film optoelectronic transducer that performs light emission or light reception, connected to said first wiring and said third wiring via the second conduction control circuit, a center-of-gravity of a formation area of a pixel electrode of said first thin-film optoelectronic transducer and a center-of-gravity of a formation area of a pixel electrode of said second thin-film optoelectronic transducer being sufficiently close to each other in comparison with a size of each pixel electrode.

22. The active matrix display device according to claim 20, further comprising a light-shielding layer formed between the pixel electrode of said first thin-film optoelectronic transducer and the pixel electrode of said second thin-film optoelectronic transducer.