Antifuse structure and method of making

• US 6,559,516 B1
• Filed: 01/16/2002
• Issued: 05/06/2003
• Est. Priority Date: 01/16/2002
• Status: Expired due to Fees

• Current Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Original Assignee: Hewlett-Packard Development Co. (HP Inc.)
• Inventors: Van Brocklin, Andrew L., Fricke, Peter
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): TRAN, LONG K
• Application Number:
  US10/051,676
• Time in Patent Office: 475 Days
• Field of Search: 257/30, 257/530, 438/131, 438/467, 438/600, 438/957
• US Class Current: 257/530
• CPC Class Codes: H01L 23/5252 comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10S 438/957 Making metal-insulator-metal device

Abstract

An antifuse structure has an antifuse between first and second thermal conduction regions. Each of the first and second thermal conduction regions has a portion of low thermal conductivity and a portion of high thermal conductivity. The portion having low thermal conductivity is between the respective portion of high thermal conductivity and the antifuse.

Claims

1. An antifuse structure, comprising:

an antifuse between first and second thermal conduction regions, wherein;

each of the first and second thermal conduction regions has a portion of low thermal conductivity and a portion of high thermal conductivity; and

the portion having low thermal conductivity is between the respective said portion of high thermal conductivity and the antifuse;

wherein;

each said portion having high thermal conductivity includes an electrically conductive line;

the portion having low thermal conductivity of the first thermal conduction region includes a first electrode;

the portion having low thermal conductivity of the second first thermal conduction region includes a second electrode; and

a control element interfacing the second electrode and being selected from the group consisting of diode and a tunnel junction.

2. The antifuse structure as defined in claim 1, wherein the portion having low thermal conductivity has a thermal conductivity less by about an order of magnitude than that of the portion of high thermal conductivity.

3. The antifuse structure as defined in claim 1, wherein:

the portion having low thermal conductivity of the second thermal conduction region includes;

a third electrode; and

the control element interfacing both the second and third electrodes.

4. An antifuse structure, comprising:

an antifuse between first and second thermal conduction regions, wherein each of the first and second thermal conduction regions has a portion of low thermal conductivity and a portion of high thermal conductivity; and

the portion having low thermal conductivity is between the respective said portion of high thermal conductivity and the antifuse;

wherein;

each said portion having high thermal conductivity includes an electrically conductive line;

the portion having low thermal conductivity of the first thermal conduction region includes first and second electrodes;

the portion having low thermal conductivity of the second first thermal conduction region includes;

a third and fourth electrodes; and

a control element interfacing both the third and fourth electrodes and being selected from the group consisting of diode and a tunnel junction.

5. An antifuse structure, comprising:

an antifuse between first and second thermal conduction regions, wherein each of the first and second thermal conduction regions has a portion of low thermal conductivity and a portion of high thermal conductivity; and

the portion having low thermal conductivity is between the respective said portion of high thermal conductivity and the antifuse;

wherein the portion having high thermal conductivity includes an electrically conductive line.

6. An antifuse structure, comprising:

an antifuse between first and second thermal conduction regions, wherein each of the first and second thermal conduction regions has a portion of low thermal conductivity and a portion of high thermal conductivity; and

the portion having low thermal conductivity is between the respective said portion of high thermal conductivity and the antifuse wherein the portion having high thermal conductivity includes an electrically conductive line;

wherein;

the antifuse is within an antifuse layer that includes first and second electrical conductors;

each of the first and second thermal conduction regions includes a thermal insulator having a plurality of via plugs therein;

the first thermal conduction region interfaces the first electrical conductor; and

the second thermal conduction region interfaces the second electrical conductor.

7. The antifuse structure as defined in claim 6, wherein:

the antifuse layer is within a memory structure in which the first electrical conductor is a row line and the second electrical conductor is a column line;

the first thermal conduction region includes an electrode;

the second thermal conduction region includes an electrode;

a control element is between the antifuse layer and the second thermal conduction region, wherein;

the control element interfaces the antifuse layer and is selected from the group consisting of diode and a tunnel junction; and

the antifuse layer interfaces the electrode of the second thermal conduction region.

8. The antifuse structure as defined in claim 6, wherein:

the antifuse layer is within a memory structure in which the first electrical conductor is a row line and the second electrical conductor is a column line;

the first thermal conduction region includes a first electrode;

the second thermal conduction region includes second and third electrodes;

a control element is between the second and third electrodes, wherein;

the second thermal conduction region interfaces the antifuse layer;

the control element interfaces the third electrode and is selected from the group consisting of diode and a tunnel junction; and

the third electrode interfaces the antifuse layer.

9. The antifuse structure as defined in claim 6, wherein:

the antifuse layer is within a memory structure in which the first electrical conductor is a row line and the second electrical conductor is a column line;

the antifuse layer is sandwiched between first and second electrodes;

the first thermal conduction region includes;

the first electrode; and

a third electrode;

the second thermal conduction region includes;

the second electrode; and

a fourth electrode;

a control element is between the second and fourth electrodes, wherein;

the control element is selected from the group consisting of diode and a tunnel junction;

the second thermal conduction region interfaces the antifuse layer; and

the first electrode interfaces the third electrode.

10. A memory structure comprising:

a column line between top and bottom row lines;

top and bottom antifuses respectively between;

the bottom row line and the column line; and

the column line and the top row line;

wherein;

each of the top and bottom antifuses is between top and bottom thermal conduction regions;

each of the top and bottom thermal conduction regions has a portion of low thermal conductivity and a portion of high thermal conductivity;

each said portion of high thermal conductivity is selected from the group consisting of the column line and the first and second row lines; and

each said portion having low thermal conductivity is between the respective said portion of high thermal conductivity and the respective antifuse.

11. The memory structure as defined in claim 10, wherein each said portion having low thermal conductivity has a thermal conductivity less by about an order of magnitude than that of each said portion of high thermal conductivity.

12. The memory structure as defined in claim 10, wherein:

each said portion having low thermal conductivity of the top thermal conduction region includes a first electrode;

each said portion having low thermal conductivity of the bottom thermal conduction region further includes;

a second electrode; and

a control element interfacing the second electrode and being selected from the group consisting of diode and a tunnel junction.

13. The memory structure as defined in claim 10, wherein:

the portion having low thermal conductivity of the top thermal conduction region includes a first electrode;

the portion having low thermal conductivity of the bottom thermal conduction region further includes;

second and third electrodes; and

a control element interfacing both the second and third electrodes and being selected from the group consisting of diode and a tunnel junction.

14. The memory structure as defined in claim 10, wherein:

the portion having low thermal conductivity of the top thermal conduction region includes first and second electrodes;

the portion having low thermal conductivity of the bottom thermal conduction region further includes;

third and fourth electrodes; and

a control element interfacing both the third and fourth electrodes and being selected from the group consisting of diode and a tunnel junction.

15. The memory structure as defined in claim 10, wherein:

each said antifuse is within an antifuse layer; and

each said portion of low thermal conductivity includes a thermal insulator having a plurality of via plugs therein.

16. A memory structure comprising:

a memory cell including;

a row line;

an antifuse layer in electrical communication with the row line through an interface;

a control element in electrical communication with the antifuse layer; and

a column line in electrical communication with the control element;

a dielectric region interfacing the memory cell;

wherein the antifuse layer is thermally isolated from the row line and the column line.

17. The memory structure as defined in claim 16, further comprising a plurality of the memory cells, vertically offset one from another by the dielectric region.

18. The memory structure as defined in claim 16, wherein:

the row line and the column line each comprise aluminum or an alloy thereof;

the interface to the antifuse layer from the row line comprises a refractory metal or alloy thereof;

the dielectric region comprises silicon dioxide; and

at least a portion of the control element comprises lightly doped amorphous or microcrystalline silicon.

19. The memory structure as defined in claim 16, wherein the control element is selected from the group consisting of a diode and a tunnel junction.

20. A memory structure comprising:

a memory cell including;

a row line;

an electrical insulator having an electrical contact therein;

an electrode in electrical communication with the row line through the electrical contact;

an antifuse layer in electrical communication with the electrode;

a control element in electrical communication with the antifuse layer; and

a column line in electrical communication with the-control element;

a dielectric region interfacing the memory cell.

21. The memory structure as defined in claim 20, further comprising a plurality of the memory cells electrically insulated one from another by the dielectric region.

22. The memory structure as defined in claim 20, wherein:

the row line and the column line each comprise aluminum or an alloy thereof;

the electrical contact comprises a refractory metal or alloy thereof;

the dielectric region comprises silicon dioxide;

at least a portion of the control element comprises lightly doped amorphous or microcrystalline silicon; and

the antifuse layer comprises alumina.

23. The memory structure as defined in claim 20, wherein the control element is a diode or a tunnel junction.

24. A memory structure comprising:

a first row line;

a column line;

a first antifuse layer;

a first control element; and

a dielectric region interfacing each of the column line, the first antifuse layer, and the first control element;

wherein;

the row line is in electrical communication with the first antifuse layer through an interface; and

the first antifuse layer is in electrical communication with the first control element;

wherein the antifuse layer is thermally isolated from the row line and the column line.

25. The memory structure as defined in claim 24, further comprising:

a second row line;

a second antifuse layer; and

a second control element;

wherein;

the dielectric region interfaces each of the second antifuse layer and the second control element;

the column line is in electrical communication with the second antifuse layer through an interface;

the second antifuse layer is in electrical communication with the second control element;

the second control element is in electrical communication with the second row line.

26. The memory structure as defined in claim 25, wherein:

the first and second row lines and the column line each comprise aluminum or an alloy thereof;

the respective interface from the row line and column line to the first and second antifuse layers each comprises a refractory metal or alloy thereof;

the first, second and third dielectric regions each comprise silicon dioxide;

at least a portion of the first and second control elements comprises lightly doped amorphous or microcrystalline silicon; and

the first and second antifuse layers each comprise alumina.

27. The memory structure as defined in claim 25, wherein the first and second control elements are each selected from the group consisting of a diode and a tunnel junction.

28. A memory structure comprising:

a first and second row lines each interfacing, respectively, first and second dielectric regions;

a column line;

first and second antifuse layers;

first and second control elements; and

a third dielectric region interfacing each of the column line, the first and second antifuse layers, and the first and second control elements;

wherein;

the row line is in electrical communication with the first antifuse layer through a thermal and electrical interface;

the first antifuse layer is in electrical communication with the first control element;

the first control element is in electrical communication with the column line;

the column line is in electrical communication with the second antifuse layer through a thermal and electrical interface;

the second antifuse layer is in electrical communication with the second control element; and

the second control element is in electrical communication with the second row line.

29. The memory structure as defined in claim 28, wherein:

the first and second row lines and the column line each comprise aluminum or an alloy thereof;

the respective interface from the row line and column line to the first and second antifuse layers each comprises a refractory metal or alloy thereof;

the first, second and third dielectric regions each comprise silicon dioxide;

at least a portion of the first and second control elements comprises lightly doped amorphous or microcrystalline silicon;

the first and second antifuse layers each comprise alumina; and

the first and second control elements are each selected from the group consisting of a diode and a tunnel junction.

30. A one time programmable memory device, comprising:

a memory structure including,

a memory cell including;

a row line;

an electrical insulator having an electrical contact therein;

an electrode in electrical communication with the row line through the electrical contact;

an antifuse layer in electrical communication with the electrode;

a control element in electrical communication with the antifuse layer; and

a column line in electrical communication with the control element;

a dielectric region interfacing the memory cell.

31. A digital film for use in a digital camera, comprising at least one memory device of claim 30.

32. A memory card for permanent or removable memory media use in an electronic apparatus selected from the group consisting of a computing device, a multifunction peripheral, a cellular telephone, a personal digital assistant, a facsimile machine, a desk top scanner, a high volume copier, a music playing device, a video playing device, and a portable or fixed electronic apparatus, comprising the memory device of claim 30.