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Semiconductor devices and methods for manufacturing semiconductor devices

  • US 6,559,545 B2
  • Filed: 06/03/2002
  • Issued: 05/06/2003
  • Est. Priority Date: 02/03/2000
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a plurality of wiring layers and dielectric layers interposed between the mutual wiring layers, and a bonding pad section in an uppermost dielectric layer;

    wherein the bonding pad section comprises an opening region having a plurality of partial opening sections divided by dielectric layers, and a plurality of conduction layers each comprising of different materials and exposed in each of the partial opening sections.

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