Active matrix substrate and method of manufacturing the same

• US 6,559,905 B1
• Filed: 06/23/2000
• Issued: 05/06/2003
• Est. Priority Date: 06/25/1999
• Status: Expired due to Term

• Current Assignee: Japan Display Central Incorporated (Japan Display Incorporated)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Akiyama, Masahiko
• Primary Examiner(s): Ton, Toan
• Assistant Examiner(s): NGUYEN, HOAN C
• Application Number:
  US09/602,298
• Time in Patent Office: 1,047 Days
• Field of Search: 149/45, 149/42, 149/43, 149/47, 149/52
• US Class Current: 349/45
• CPC Class Codes: G02F 1/13613 the semiconductor element being formed on a first substrate and thereafter transferred to the final cell substrate
• CPC Class Codes: H01L 2221/68322 Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
• CPC Class Codes: H01L 2221/6835 used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer
• CPC Class Codes: H01L 2224/24011 Deposited, e.g. MCM-D type
• CPC Class Codes: H01L 2224/24225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/24226 the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78636 with supplementary region or layer for improving the flatness of the device
• CPC Class Codes: H01L 29/78669 with inverted-type structure, e.g. with bottom gate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H10K 59/1201 : Manufacture or treatment
• CPC Class Codes: H10K 71/80 : using temporary substrates

Abstract

A method of manufacturing an active matrix substrate comprises forming a plurality of elements on an element formation substrate, forming wirings on a final substrate, transferring some elements selected from the elements, and selectively connecting some elements to the wirings on the final substrate. According to this method, it is possible to manufacture an active matrix substrate providing a high definition image on a large substrate or a non-glass substrate, at a low cost.

Claims

1. A method of manufacturing an active matrix substrate comprising:

a first step of forming a plurality of elements on a first substrate;

a second step of forming wirings on a second substrate;

a third step of transferring some elements selected from said plurality of elements onto said second substrate from said first substrate; and

a fourth step of selectively connecting said some elements transferred onto said second substrate to said wirings,

wherein said third step includes the steps of;

forming an adhesion layer on a third substrate;

transferring said plurality of elements formed on said first substrate to said third substrate by said adhesion layer;

forming adhesion thick film pads at portions on said second substrate, said adhesion pads corresponding to said selected elements selectively transferred to said second substrate; and

bonding said selected elements on said third substrate to said adhesion thick film pads, while other unselected elements on said third substrate are left spaced apart from said second substrate during said bonding step.

2. The method of manufacturing an active matrix substrate according to claim 1, wherein said step of transferring said plurality of elements formed on said first substrate to said third substrate by said adhesion layer includes the steps of:

bonding said plurality of elements formed on said first substrate to said third substrate by said adhesion layer; and

etching away said first substrate.

3. The method of manufacturing an active matrix substrate according to claim 1, wherein said third step includes a step of selecting said some elements such that a largest interval of two adjacent elements arbitrarily chosen from said some elements is larger than a largest interval of two adjacent elements arbitrarily chosen from said plurality of elements formed on said first substrate.

4. The method of manufacturing an active matrix substrate according to claim 1, wherein said third step includes a step of selecting said some elements at predetermined intervals thereamong, and a step of repeating said step of selecting said some elements.

5. The method of manufacturing an active matrix substrate according to claim 1, wherein said third step further includes a step of peeling off said some elements by heating said adhesion layer.

6. The method of manufacturing an active matrix substrate according to claim 5, wherein said third step further includes the steps of:

forming a plurality of light absorbers on portions of said third substrate, which corresponds to portions on which said plurality of elements are to be bonded by said adhesion layer, and

selectively heating portions of said adhesion layer by irradiating light to some light absorbers of said plurality of light absorbers correspondingly provided to said some elements to be transferred for peeling off said some elements.

7. The method of manufacturing an active matrix substrate according to claim 5, wherein said third step further includes the steps of:

forming a plurality of heating members on portions of said third substrate, which corresponds to portions on which said plurality of elements are to be bonded by said adhesion layer, before the step of forming said adhesion layer, and

selectively heating portions of said adhesion layer by some heating members of said plurality of heating members correspondingly provided to said some elements to be transferred for peeling off said some elements.

8. The method of manufacturing an active matrix substrate according to claim 1, wherein said first step includes the steps of:

forming an underlying layer on said first substrate, said underlying layer including an etching stopper layer formed on said first substrate and an undercoat layer formed on said etching stopper layer;

forming said plurality of elements on said underlying layer; and

forming a protective layer individually on each of said plurality of elements, such that said plurality of elements are covered with said underlying layer and said protective layer.

9. The method of manufacturing an active matrix substrate according to claim 8, further comprising a step of separating said underlying layer including said etching stopper layer and said undercoat layer into sections such that said underlying layer remains only just under each of said plurality of elements.

10. The method of manufacturing an active matrix substrate according to claim 8, wherein said fourth step includes etching away said protective layer prior to connecting said some elements to said wirings.

11. A method of manufacturing an active matrix substrate comprising:

a first step of forming a plurality of elements on a first substrate;

a second step of transferring some elements selected from said plurality of elements onto a second substrate from said first substrate;

a third step of forming wirings on said second substrate after said second step; and

a fourth step of selectively connecting said some elements and said wirings,

wherein said second step includes the steps of;

forming an adhesion layer on a third substrate;

transferring a plurality of elements formed on said first substrate onto said third substrate by said adhesion layer;

forming adhesion thick film pads at portions on said second substrate, said adhesion thick film pads corresponding to said selected elements selectively transferred to said second substrate; and

bonding said selected elements on said third substrate to said adhesion thick film pads, while other unselected elements on said third substrate are left spaced apart from said second substrate during said bonding step.

12. The method of manufacturing an active matrix substrate according to claim 11, herein said step of transferring said plurality of elements formed on said first substrate to said third substrate by said adhesion layer further comprises the steps of:

bonding said plurality of elements formed on said first substrate to said third substrate by said adhesion layer; and

etching away said first substrate.

13. The method of manufacturing an active matrix substrate according to claim 11, wherein said second step includes a step of selecting said some elements such that a largest interval of two adjacent elements arbitrarily chosen from said some elements is larger than a largest interval of two adjacent elements arbitrarily chosen from said plurality of elements formed on said first substrate.

14. The method of manufacturing an active matrix substrate according to claim 11, wherein said second step includes a step of selecting said some elements at predetermined intervals thereamong, and a step of repeating said step of selecting said some elements.

15. The method of manufacturing an active matrix substrate according to claim 11, wherein said second step further includes a step of peeling off said some elements by heating said adhesion layer.

16. The method of manufacturing an active matrix substrate according to claim 15, wherein said second step further includes the steps of:

forming a plurality of light absorbers on portions of said third substrate, which corresponds to portions on which said plurality of elements are to be bonded by said adhesion layer, and

selectively heating portions of said adhesion layer by irradiating light to some light absorbers of said plurality of light absorbers correspondingly provided to said some elements to be transferred for peeling off said some elements.

17. The method of manufacturing an active matrix substrate according to claim 15, wherein said second step further includes the steps of:

forming a plurality of heating members on portions of said third substrate, which corresponds to portions on which said plurality of elements are to be bonded by said adhesion layer, before the step of forming said adhesion layer, and

selectively beating portions of said adhesion layer by some heating members of said plurality of heating members correspondingly provided to said some elements to be transferred for peeling off said some elements.

18. The method of manufacturing an active matrix substrate according to claim 11, wherein said first step includes the steps of:

forming an underlying layer on said first substrate, said underlying layer including an etching stopper layer formed on said first substrate and an undercoat layer formed on said etching stopper layer;

forming said plurality of elements on said underlying layer; and

forming a protective layer individually on each of said plurality of elements, such that said plurality of elements are covered with said underlying layer and said protective layer.

19. The method of manufacturing an active matrix substrate according to claim 18, further comprising a step of separating said underlying layer including said etching stopper layer and said undercoat layer into sections such that said underlying layer remains only just under each of said plurality of elements.

20. The method of manufacturing an active matrix substrate according to claim 18, wherein said fourth step includes etching away said protective layer prior to connecting said some elements to said wirings.

21. A method of manufacturing an active matrix substrate comprising:

a first step of forming an underlying layer on a first substrate, said underlying layer including an etching stopper layer formed on said first substrate and an undercoat layer formed on said etching stopper layer;

a second step of forming a plurality of circuit units, on said underlying layer, composed of at least one element and at least one wiring connected to said at least one element, followed by separating said underlying layer into sections such that said underlying layer remains only just under each of said plurality of circuit units;

a third step of bonding said plurality of circuit units formed on said first substrate to a third substrate via said underlying layer and an adhesion layer formed on said third substrate;

a fourth step of etching away said first substrate; and

a fifth step of selectively transferring said plurality of circuit units adhered onto said third substrate to a second substrate.

22. The method of manufacturing an active matrix substrate according to claim 21, wherein said fifth step includes a step of selectively heating portions of said adhesion layer on which said plurality of circuit units to be transferred are formed, to thereby transfer said circuit units from said third substrate to said second substrate.

23. The method of manufacturing an active matrix substrate according to claim 21, wherein each of said plurality of circuit units includes a plurality of pixel electrodes, and said fifth step is repeated a plurality of times such that an interval between adjacent electrodes of said plurality of pixel electrodes is kept substantially constant through repeated transfer steps of said plurality of circuit units.

24. The method of manufacturing an active matrix substrate according to claim 21, wherein said undercoat layer includes at least a silicon nitride layer.

25. The method of manufacturing an active matrix substrate according to claim 21, wherein said fourth step includes etching away said first substrate with said underlying layer leaving to cover said plurality of circuit units, and

said fifth step includes transferring said plurality of circuit units to said second substrate by said underlying layer.

26. The method of manufacturing an active matrix substrate according to claim 21, wherein said second step includes a step of forming a protective layer individually on each of said plurality of circuit units, such that said plurality of circuit units are covered with said underlying layer and said protective layer.

27. The method of manufacturing an active matrix substrate according to claim 26, wherein said fifth step includes etching away said protective layer.