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Non-volatile memory with temperature-compensated data read

  • US 6,560,152 B1
  • Filed: 11/02/2001
  • Issued: 05/06/2003
  • Est. Priority Date: 11/02/2001
  • Status: Expired due to Term
First Claim
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1. A non-volatile memory, comprising:

  • a data storage cell including a storage element, a control gate and first and second source/drain terminals;

    a first current source operable to provide a first current to the first source/drain terminal;

    a node electrically connected to the second source/drain terminal;

    a bias circuit operable to provide a bias voltage to the node, the bias voltage varying with temperature, the variation of the bias voltage being approximately inverse to a thermal variation of a threshold voltage of the data storage cell; and

    a control gate voltage circuit operable to provide a voltage level to the control gate.

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