Method for forming cross-linking photoresist and structures formed thereby

• US 6,562,546 B2
• Filed: 01/17/2002
• Issued: 05/13/2003
• Est. Priority Date: 05/27/1999
• Status: Expired due to Term

• Current Assignee: Winbond Electronics Corporation
• Original Assignee: Winbond Electronics Corporation
• Inventors: Chang, Wen-Pin
• Primary Examiner(s): Duda, Kathleen
• Application Number:
  US10/053,132
• Publication Number:
  US 20020064730A1
• Time in Patent Office: 481 Days
• Field of Search: 430/311, 430/313, 430/328, 430/330
• US Class Current: 430/313
• CPC Class Codes: B32B 3/02 characterised by features of form at particular places, e.g. in edge regions non-uniform thickness B32B3/263
• CPC Class Codes: G03F 7/0382 the macromolecular compound being present in a chemically amplified negative photoresist composition
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking
• CPC Class Codes: Y10T 428/24802 Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
• CPC Class Codes: Y10T 428/3175 Next to addition polymer from unsaturated monomer[s]
• CPC Class Codes: Y10T 428/31938 Polymer of monoethylenically unsaturated hydrocarbon

Abstract

A method for forming a cross-linking photoresist layer is provided. The method includes steps of providing a photoresist layer; activating the photoresist layer with a light provided by a light source; and putting the photoresist layer in a vapor of a cross-linking agent to form the cross-linking photoresist layer.

Claims

1. A method for forming a cross-linking photoresist layer, comprising steps of:

providing a photoresist layer;

activating said photoresist layer with a light provided by a light source; and

putting said photoresist layer in a vapor of a cross-linking agent being butadiene diepoxy to form said cross-linking photoresist layer.

2. A method according to claim 1 wherein said photoresist layer is a patterned photoresist layer.

3. A method according to claim 1 wherein said photoresist layer is a chemically amplified resist layer.

4. A method according to claim 1, wherein said light is an ultra violet (UV) ray.

5. A method according to claim 4 wherein said ultra violet ray has a wavelength of about 365 nm.

6. A method according to claim 1, further comprising a step of:

baking said photoresist layer after said photoresist layer is activated by said light.

7. A method according to claim 6 wherein said cross-linking photoresist layer is formed at a temperature ranged between about 90 to about 120.

8. A method according to claim 7 wherein said temperature is about 100°

C.

9. A method according to claim 7 wherein said temperature is obtained through heating said photoresist layer by a hot plate.

10. A method according to claim 9 wherein said photoresist layer is heated for about 10 seconds to 30 minutes.

11. A method according to claim 1 wherein said photoresist layer is provided on a substrate.

12. A method for manufacturing a semiconductor device, comprising steps of:

forming a photoresist layer on a substrate;

patterning said photoresist layer;

forming a cross-linking layer with a cross-linking agent being butadiene diepoxy over the surface of said photoresist layer; and

etching said semiconductor structure having said photoresist layer and said cross-linking layer.

13. A method according to claim 12 wherein said photoresist layer is a chemically amplified resist layer.

14. A method according to claim 13 wherein said photoresist layer has a structure of:

wherein “

n”

is a natural number.

15. A method according to claim 14 wherein steps for forming said cross-linking layer include:

activating said photoresist layer to generate thereon a hydroxy group; and

putting said photoresist layer into an atmosphere of a cross-linking agent to generate said cross-linking layer.

16. A method according to claim 15 wherein said photoresist layer is heated by a hot plate at a temperature of about 100°

C. when being put into said atmosphere of said cross-linking agent.

17. A method according to claim 16 wherein said photoresist layer is heated by said hot plate for about 10 seconds to 30 minutes.

18. A method according to claim 15 wherein said photoresist layer is activated by a ultra violet ray having a length of about 365 nm.

19. A method according to claim 12, further comprising a step of:

implanting said semiconductor structure.