Method for manufacturing light-emitting device using a group III nitride compound semiconductor
First Claim
1. A method for manufacturing a light-emitting device using group III nitride group compound semiconductor having a quantum well structure, comprising steps of:
- forming a well layer;
forming a cap layer on said well layer which has almost the same compositions as said well layer and comprises group III nitride group compound semiconductor around the temperature at which said well layer is formed and at growth rate v (>
u) which is faster than crystal growth rate u of said well layer;
eliminating a portion or all of said cap layer by using thermal cracking during a temperature raising process where the temperature is raised to a temperature for forming next group III nitride group compound semiconductor layer; and
forming said group III nitride group compound semiconductor layer.
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Abstract
A method for manufacturing a light-emitting device which using group III nitride group semiconductors and a quantum well structure, comprising forming a well layer (e.g. an InGaN layer), forming a cap layer on the well layer, the cap layer having almost the same compositions as the well layer at a temperature similar to that at which the well layer was formed. Further, and the cap layer is formed at a crystal growth rate which is faster than the crystal growth rate of the well layer and removing the cap layer using a thermal cracking (or decomposition) process during the temperature ramp up associated with the formation of the next group III nitride compound semiconductor layer. After the cap layer is removed, the group III nitride compound semiconductor layer is formed on the exposed well layer.
10 Citations
37 Claims
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1. A method for manufacturing a light-emitting device using group III nitride group compound semiconductor having a quantum well structure, comprising steps of:
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forming a well layer;
forming a cap layer on said well layer which has almost the same compositions as said well layer and comprises group III nitride group compound semiconductor around the temperature at which said well layer is formed and at growth rate v (>
u) which is faster than crystal growth rate u of said well layer;
eliminating a portion or all of said cap layer by using thermal cracking during a temperature raising process where the temperature is raised to a temperature for forming next group III nitride group compound semiconductor layer; and
forming said group III nitride group compound semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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36. A method for manufacturing a light-emitting device using group III nitride compound semiconductors having a quantum well structure on a substrate, comprising steps of:
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forming a well layer at a first crystal growth rate and at a first deposition temperature, the well layer comprising a first group III nitride compound semiconductor layer;
forming a cap layer on said well layer at a second crystal growth rate and at a second deposition temperature, the cap layer comprising a second group III nitride compound semiconductor layer;
wherein the difference between the first deposition temperature and the second deposition temperature is less than 50°
C.,and further wherein the second crystal growth rate is faster than the first crystal growth rate;
increasing the temperature of the substrate, the well layer and the cap layer from an initial temperature to a third deposition temperature, the third deposition temperature being greater than the second deposition temperature;
removing at least a portion of the cap layer by decomposition as the temperature of the cap layer increases from the initial temperature to the third deposition temperature; and
forming a third group III nitride compound semiconductor layer at the third deposition temperature. - View Dependent Claims (37)
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Specification
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- Resources
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Current AssigneeToyoda Gosei Company Limited (Toyota Motor Corporation)
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Original AssigneeToyoda Gosei Company Limited (Toyota Motor Corporation)
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InventorsShibata, Naoki, Watanabe, Hiroshi
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Primary Examiner(s)COLEMAN, WILLIAM D
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Application NumberUS09/863,514Publication NumberTime in Patent Office719 DaysField of Search438/604, 438/29, 438/31, 438/37, 438/46, 438/47, 438/602US Class Current438/31CPC Class CodesB82Y 20/00 Nanooptics, e.g. quantum op...H01L 33/007 comprising nitride compoundsH01L 33/06 within the light emitting r...H01S 5/3407 characterised by special ba...H01S 5/34333 with a well layer based on ...
