Semiconductor material and method for forming the same and thin film transistor
First Claim
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1. A method for manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film on an insulating surface;
crystallizing said semiconductor film by irradiating a first light to said semiconductor film without melting said semiconductor film;
introducing an impurity element into a portion of the crystalline semiconductor film; and
activating said impurity element by irradiating a second light to said crystalline semiconductor film without melting said crystalline semiconductor film.
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Abstract
A semiconductor material and a method for forming the same, said semiconductor material having fabricated by a process comprising irradiating a laser beam or a high intensity light equivalent to a laser beam to an amorphous silicon film containing therein carbon, nitrogen, and oxygen each at a concentration of 5×1019 atoms·cm−3 or lower, preferably 1×1019 atoms·cm−3 or lower, without melting the amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating compact thin film semiconductor devices such as thin film transistors improved in device characteristics.
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Citations
30 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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forming a semiconductor film on an insulating surface;
crystallizing said semiconductor film by irradiating a first light to said semiconductor film without melting said semiconductor film;
introducing an impurity element into a portion of the crystalline semiconductor film; and
activating said impurity element by irradiating a second light to said crystalline semiconductor film without melting said crystalline semiconductor film. - View Dependent Claims (2, 3, 4, 5)
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6. A method for manufacturing a semiconductor device comprising the steps of:
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forming a semiconductor film on an insulating surface;
crystallizing said semiconductor film by irradiating a first light to said semiconductor film without melting said semiconductor film;
introducing an impurity element into a portion of the crystalline semiconductor film; and
activating said impurity element by irradiating a second light to said crystalline semiconductor film without melting said crystalline semiconductor film, wherein said crystalline semiconductor film shows a Raman shift at a wave number of 517 cm−
1 or less.- View Dependent Claims (7, 8, 9, 10)
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11. A method for manufacturing a semiconductor device comprising the steps of:
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forming a semiconductor film on an insulating surface;
crystallizing said semiconductor film by irradiating a first light to said semiconductor film without melting said semiconductor film;
introducing an impurity element into a portion of the crystalline semiconductor film;
activating said impurity element by irradiating a second light to said crystalline semiconductor film without melting said crystalline semiconductor film; and
annealing said crystalline semiconductor film in an atmosphere containing hydrogen. - View Dependent Claims (12, 13, 14, 15)
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16. A method for manufacturing a semiconductor device comprising the steps of:
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forming a semiconductor film on an insulating surface;
forming a protective film on said semiconductor film, said protective film comprising a material expressed by a formula SiNxOyCz where 0≦
x≦
4/3, 0≦
y≦
2, 0≦
z≦
1 and 0≦
3x+2y+4z≦
4;
crystallizing said semiconductor film by irradiating a first light to said semiconductor film without melting said semiconductor film;
introducing an impurity element into a portion of the crystalline semiconductor film; and
activating said impurity element by irradiating a second light to said crystalline semiconductor film without melting said crystalline semiconductor film. - View Dependent Claims (17, 18, 19, 20)
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21. A method for manufacturing a semiconductor device comprising the steps of:
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forming a semiconductor film on an insulating surface;
crystallizing said semiconductor film by irradiating a first light to said semiconductor film without melting said semiconductor film;
introducing an impurity element into a portion of the crystalline semiconductor film; and
activating said impurity element by irradiating a second light to said crystalline semiconductor film without melting said crystalline semiconductor film, wherein the crystallizing step is continuously performed after the forming semiconductor film step without exposing said semiconductor film to air. - View Dependent Claims (22, 23, 24, 25)
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26. A method for manufacturing a semiconductor device comprising the steps of:
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forming a semiconductor film on an insulating surface;
forming a protective film on said semiconductor film, said protective film comprising a material expressed by a formula SiNxOyCz where 0≦
x≦
4/3, 0≦
y≦
2, 0≦
z≦
1 and 0≦
3x+2y+4z≦
4;
crystallizing said semiconductor film by irradiating a first light to said semiconductor film without melting said semiconductor film;
removing said protective film;
forming an insulating film on the crystalline semiconductor film;
introducing an impurity element into a portion of said crystalline semiconductor film through said insulating film; and
activating said impurity element by irradiating a second light to said crystalline semiconductor film without melting said crystalline semiconductor film. - View Dependent Claims (27, 28, 29, 30)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsKusumoto, Naoto, Takemura, Yasuhiko, Yamazaki, Shunpei, Zhang, Hongyong
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Primary Examiner(s)Nguyen, Tuan H.
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Application NumberUS09/911,615Publication NumberTime in Patent Office657 DaysField of Search438/149, 438/151, 438/158, 438/160, 438/166, 438/486, 438/487, 438/488US Class Current438/166CPC Class CodesH01L 29/16 including, apart from dopin...H01L 29/78675 with normal-type structure,...
