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Semiconductor material and method for forming the same and thin film transistor

  • US 6,562,672 B2
  • Filed: 07/25/2001
  • Issued: 05/13/2003
  • Est. Priority Date: 03/18/1991
  • Status: Expired due to Fees
First Claim
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1. A method for manufacturing a semiconductor device comprising the steps of:

  • forming a semiconductor film on an insulating surface;

    crystallizing said semiconductor film by irradiating a first light to said semiconductor film without melting said semiconductor film;

    introducing an impurity element into a portion of the crystalline semiconductor film; and

    activating said impurity element by irradiating a second light to said crystalline semiconductor film without melting said crystalline semiconductor film.

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