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Plasma processes for depositing low dielectric constant films

  • US 6,562,690 B1
  • Filed: 06/13/2000
  • Issued: 05/13/2003
  • Est. Priority Date: 02/11/1998
  • Status: Expired due to Fees
First Claim
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1. A method for depositing a low dielectric constant film on a semiconductor substrate, comprising reacting two or more silicon compounds with an oxidizing gas at plasma conditions sufficient to deposit a low dielectric constant film on the semiconductor substrate, wherein each of the two or more silicon compounds comprises a silicon-carbon bond and at least one of the two or more silicon compounds comprises oxygen, and wherein the low dielectric constant film comprises silicon-carbon bonds and a dielectric constant of about 3 or less.

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