Electrically tunable device and a method relating thereto

• US 6,563,153 B2
• Filed: 06/20/2001
• Issued: 05/13/2003
• Est. Priority Date: 06/20/2000
• Status: Expired due to Term

• Current Assignee: Optis Cellular Technology LLC (Brevet Capital)
• Original Assignee: Telefonaktiebolaget LM Ericsson
• Inventors: Petrov, Peter, Ivanov, Zdravko, Gevorgian, Spartak, Wikborg, Erland
• Primary Examiner(s): Lee, Eddie
• Assistant Examiner(s): Fenty, Jesse A.
• Application Number:
  US09/885,520
• Publication Number:
  US 20010054748A1
• Time in Patent Office: 692 Days
• Field of Search: 257/295-310
• US Class Current: 257/295
• CPC Class Codes: H01L 29/93 Variable capacitance diodes, e.g. varactors

Abstract

A thin film ferroelectric varactor device comprising a substrate layer, a ferroelectric layer structure and an electrode structure is presented. The ferroelectric layer structure comprises a number of ferroelectric layers and a number of intermediate buffer layers arranged in an alternating manner. At least a first and a second layer of the ferroelectric layers have different Curie temperatures, i.e. the dielectric constant of the first ferroelectric layer has a maximum at a temperature which is different from the temperature at which the dielectric constant of the second ferroelectric layer has a maximum.

Claims

1. A thin film ferroelectric varactor device comprising a substrate layer, a ferroelectric layer structure, and an electrode structure, wherein the ferroelectric layer structure includes a number of ferroelectric layers and a number of intermediate buffer layers arranged in an alternating manner, and at least a first and a second of the ferroelectric layers have different Curie temperatures, whereby the dielectric constant of the first ferroelectric layer has a maximum at a temperature which is different than the temperature at which the dielectric constant of the second ferroelectric layer has a maximum, wherein all layers have lattice matched crystal structures.

2. The varactor device according to claim 1, wherein at least the first and second ferroelectric layers are chemically isolated from each other by an intermediate buffer layer and the chemical elemental composition of the ferroelectric layers differ in that at least one element is different.

3. The varactor device according to claim 1, wherein the layers of the ferroelectric layer structure comprise single crystalline epitaxial films.

4. The varactor device according to claim 1, wherein the substrate layer has an elemental composition of one of MgO and LaAlO₃ and the electrode structure comprises longitudinally arranged electrodes defining a gap between them.

5. The varactor device according to claim 1, wherein the ferroelectric layers have a thickness less than or equal to about 1 μ

m, and in that the intermediate buffer layers have a thickness less than or equal to about 100 nm.

6. The varactor device according to claim 1, wherein the ferroelectric layer structure comprises a ferroelectric nano-structure with ultra-thin ferroelectric layers having a thickness less than or equal to about 100 nm.

7. The varactor device according to claim 1, wherein a buffer layer is provided adjacent to the electrode structure.

8. A thin film ferroelectric varactor device comprising a substrate layer, a ferroelectric layer structure, and an electrode structure, wherein the ferroelectric layer structure includes a number of ferroelectric layers and a number of intermediate buffer layers arranged in an alternating manner, and at least a first and a second of the ferroelectric layers have different Curie temperatures, whereby the dielectric constant of the first ferroelectric layer has a maximum at a temperature which is different than the temperature at which the dielectric constant of the second ferroelectric layer has a maximum, wherein the ferroelectric layers comprise ceramic materials, and wherein the ceramic material(s) comprise perovskite oxides of the formula R_xR′

_1-xR″

O₃, wherein R and R′

are independently selected from a group of elements consisting of Group I and Group II metals of the Periodic Table of Elements and R″

is selected from a group of elements consisting of Group IV and Group V metals of the Periodic Table of Elements, wherein each ferroelectric layer has an elemental composition of Ba_xiSr_1-xiTiO₃ respectively, wherein the content x~ is different for at least two ferroelectric layers to produce different Curie temperatures for said at least two ferroelectric layers.

9. The varactor device according to claim 8, wherein for at least two ferroelectric layers denoted i and i+1, the content x_i is in the range 0≦

x_i≦

1, and content x_(i+1) is in the range 0≦

x(x+1)≦

1.

10. A thin film ferroelectric varactor device comprising a substrate layer, a ferroelectric layer structure, and an electrode structure, wherein the ferroelectric layer structure includes a number of ferroelectric layers and a number of intermediate buffer layers arranged in an alternating manner, and at least a first and a second of the ferroelectric layers have different Curie temperatures, whereby the dielectric constant of the first ferroelectric layer has a maximum at a temperature which is different than the temperature at which the dielectric constant of the second ferroelectric layer has a maximum, wherein the ferroelectric layers comprise ceramic materials, and wherein the ceramic material(s) comprise perovskite oxides of the formula R_xR′

_1-xR″

O₃, wherein R and R′

are independently selected from a group of elements consisting of Group I and Group II metals of the Periodic Table of Elements and R″

is selected from a group of elements consisting of Group IV and Group V metals of the Periodic Table of Elements, wherein the ferroelectric layers comprise Na_xiK_1-xiNbO₃ respectively, wherein the content x_i is different for at least two ferroelectric layers to produce different Curie temperatures.

15. The varactor device according to claim 10, wherein the temperature dependence of the varactor is determined by at least one of a selection of Curie temperatures and values of x_i and 1−

x_i of an element of the composition of the respective ferroelectric layers.

11. A thin film ferroelectric varactor device comprising a substrate layer, a ferroelectric layer structure, and an electrode structure, wherein the ferroelectric layer structure includes a number of ferroelectric layers and a number of intermediate buffer layers arranged in an alternating manner, and at least a first and a second of the ferroelectric layers have different Curie temperatures, whereby the dielectric constant of the first ferroelectric layer has a maximum at a temperature which is different than the temperature at which the dielectric constant of the second ferroelectric layer has a maximum, wherein the intermediate buffer layers comprise dielectric films, and wherein at least one of the dielectric film layers has an elemental composition of one of MgO, LaAlO₃, and CeO₂.

12. A thin film ferroelectric varactor device comprising a substrate layer, a ferroelectric layer structure, and an electrode structure, wherein the ferroelectric layer structure includes a number of ferroelectric layers and a number of intermediate buffer layers arranged in an alternating manner, and at least a first and a second of the ferroelectric layers have different Curie temperatures, whereby the dielectric constant of the first ferroelectric layer has a maximum at a temperature which is different than the temperature at which the dielectric constant of the second ferroelectric layer has a maximum, wherein the intermediate buffer layers comprise dielectric films, and wherein at least one of the dielectric film layers has an elemental composition of WO₃.

13. A thin film ferroelectric varactor device comprising a substrate layer, a ferroelectric layer structure, and an electrode structure, wherein the ferroelectric layer structure includes a number of ferroelectric layers and a number of intermediate buffer layers arranged in an alternating manner, and at least a first and a second of the ferroelectric layers have different Curie temperatures, whereby the dielectric constant of the first ferroelectric layer has a maximum at a temperature which is different than the temperature at which the dielectric constant of the second ferroelectric layer has a maximum, wherein at least one of the intermediate buffer layers comprises a multilayer structure comprising a number of sublayers wherein at least one sublayer has an elemental composition of MgO and at least one sublayer has an elemental composition of WO₃.

14. A thin film ferroelectric varactor device comprising a substrate layer, a ferroelectric layer structure, and an electrode structure, wherein the ferroelectric layer structure includes a number of ferroelectric layers and a number of intermediate buffer layers arranged in an alternating manner, and at least a first and a second of the ferroelectric layers have different Curie temperatures, whereby the dielectric constant of the first ferroelectric layer has a maximum at a temperature which is different than the temperature at which the dielectric constant of the second ferroelectric layer has a maximum, wherein the ferroelectric layer structure comprises at least three ferroelectric layers.

16. A thin film ferroelectric varactor device comprising a substrate layer, a ferroelectric layer structure, and an electrode structure, wherein the ferroelectric layer structure comprises a number of ferroelectric layers and a number of intermediate buffer layers that form dielectric layers, the ferroelectric layers and the dielectric layers being arranged in an alternating manner such that ferroelectric layers between which an intermediate buffer layer is provided are chemically separated from each other and have a different elemental composition such that the temperature dependence of the dielectric constants of the respective layers is different, wherein the ferroelectric layers comprise ceramic materials such as perovskite oxides of the type R_xR′

_1-xR″

O₃ wherein x_i is different for at least subsequent ferroelectric layers between which an intermediate buffer layer is arranged, and wherein for each ferroelectric layer, i, x_i is in the range 0≦

x_i≦

1, wherein i=1, . . . , N, with N being the number of ferroelectric layers, and wherein the ferroelectric layers i, wherein i=1, . . . N, with N being the number of layers, are one of Ba_xi Sr_1-xi TiO₃ and NA_xi K_1-xiNbO₃.

17. The varactor device according to claim 16, wherein all layers of the varactor device have matching crystal structures and the Curie temperatures of the respective layers are different, wherein the Curie temperatures are controlled by the value of x_i, whereby the temperature dependence of the capacitance of the varactor can be controlled.

18. The varactor device according to claim 16, wherein the varactor device tunes at least one of tunable microwave (RE) circuits, tunable resonators, filters, phase shifters, delay lines, mixers, and harmonic generators.