Circuits and methods for extending the input common mode voltage range of JFET op-amps

• US 6,563,381 B1
• Filed: 12/04/2001
• Issued: 05/13/2003
• Est. Priority Date: 12/04/2001
• Status: Active Grant

• Current Assignee: Analog Devices International Unlimited Company (Analog Devices, Inc.)
• Original Assignee: Linear Technology Corporation (Analog Devices, Inc.)
• Inventors: Strong, Alexander Mark
• Primary Examiner(s): Nguyen, Patricia T.
• Application Number:
  US10/008,637
• Time in Patent Office: 525 Days
• Field of Search: 330/253, 330/258, 330/261, 330/300, 327/312, 327/313
• US Class Current: 330/253
• CPC Class Codes: H03F 2203/45314 the AAC comprising clamping means, e.g. diodes
• CPC Class Codes: H03F 2203/45702 the LC comprising two resistors
• CPC Class Codes: H03F 3/45282 Long tailed pairs H03F3/45309, H03F3/45336 take precedence

Abstract

Circuits and methods for extending the input common mode voltage range of a JFET op-amp are provided. The circuits and methods consist of modifying the input stage of a JFET op-amp to include a BJT pair as the input differential pair and use a JFET pair as followers. Using the BJTs as the input differential pair enables the JFET followers to operate in the linear region of operation when the op-amp'"'"'s input is approaching ground, thereby increasing the negative common mode voltage range. The positive common mode voltage range is increased by reducing the source current in the JFET pair and using a transistor pair as clamping transistors.

Claims

1. A method for improving the input common mode voltage range of a JFET op-amp, the JFET op-amp having an inverting and an non-inverting input and a plurality of current sources, the method comprising:

providing a JFET op-amp having a BJT input differential pair and a JFET pair connected as followers for the BJT pair;

maintaining the JFET pair in a linear region of operation when the inputs of the JFET op-amp approach ground;

providing a clamping transistor pair to reduce a source current in the JFET pair; and

diverting a saturating current from a BJT current source from the plurality of current sources to increase the gate-to-source voltage of the JFET pair.

2. The method of claim 1, wherein the plurality of current sources comprise one or more BJT current sources and one or more BJT current mirrors.

3. The method of claim 1, wherein the non-inverting input and the inverting input are connected to the gates of the JFET pair.

4. The method of claim 1, wherein the sources of the JFET pair are connected to the bases of the BJT pair.

5. The method of claim 1, wherein the drains of the JFET pair are connected to variable resistors.

6. The method of claim 1, wherein maintaining the JFET pair in the linear region of operation comprises biasing the drain current of the JFET pair at a fraction of Idss.

7. The method of claim 1, wherein the collectors of the clamping transistor pair are connected to the drains of the JFET pair.

8. The method of claim 1, wherein diverting the saturating current from a BJT current source from the plurality of current sources to increase the gate-to-source voltage of the JFET pair comprises providing a collector ring around the BJT current source.

9. The method of claim 1, wherein diverting the saturating current from a BJT current source from the plurality of current sources to increase the gate-to-source voltage of the JFET pair comprises providing a BJT transistor having an emitter connected to the collector of the current source, a base connected to the base of the current source, and a collector connected to the collector of the current source.

10. A JFET op-amp circuit having an extended input common mode voltage range, the JFET op-amp circuit having an inverting and an non-inverting input and a plurality of current sources, the circuit comprising:

a BJT input differential pair;

a JFET pair connected as followers for the BJT pair;

a clamping transistor pair to reduce a source current in the JFET pair; and

a BJT collector ring around a BJT current source from the plurality of current sources.

11. The circuit of claim 10, wherein the plurality of current sources comprise one or more BJT current sources and one or more BJT current mirrors.

12. The circuit of claim 10, wherein the non-inverting input and the inverting input are connected to the gates of the JFET pair.

13. The circuit of claim 10, wherein the sources of the JFET pair are connected to the bases of the BJT pair.

14. The circuit of claim 10, wherein the drains of the JFET pair are connected to variable resistors.

15. The circuit of claim 10, wherein the drain current of the JFET pair is biased at a fraction of Idss.

16. The circuit of claim 10, wherein a resistor pair is placed between the sources of the JFET pair and the emitters of the clamping transistor pair.

17. The circuit of claim 10, wherein a load resistor pair is connected to the collectors of the BJT pair.

18. A JFET op-amp circuit having an extended input common mode voltage range, the JFET op-amp circuit having an inverting and an non-inverting input and a plurality of current sources, the JFET op-amp circuit comprising:

a BJT input differential pair;

a JFET pair connected as followers for the BJT pair;

means for maintaining the JFET pair in a linear region of operation when the inputs of the JFET op-amp circuit approach ground;

means for reducing a source current in the JFET pair; and

means for diverting a saturating current from a BJT current source from the plurality of current sources to increase the gate-to-source voltage of the JFET pair.

19. The circuit of claim 18, wherein the plurality of current sources comprise one or more BJT current sources and one or more BJT current mirrors.

20. The circuit of claim 18, wherein the non-inverting input and the inverting input are connected to the gates of the JFET pair.

21. The circuit of claim 18, wherein the sources of the JFET pair are connected to the bases of the BJT pair.

22. The circuit of claim 18, wherein the drains of the JFET pair are connected to variable resistors.

23. The circuit of claim 18, wherein the means for maintaining the JFET pair in the linear region of operation comprises means for biasing the drain current of the JFET pair at a fraction of Idss.

24. The circuit of claim 18, wherein a load resistor pair is connected to the collectors of the BJT pair.