Method for electrochemically depositing metal on a semiconductor workpiece
First Claim
1. A process for applying a metallization interconnect structure, comprising:
- (a) providing a workpiece on which an ultra-thin metal seed layer has been formed using a first deposition process, the first deposition process being a vapor-phase deposition process that anchors the ultra-thin metal seed layer to an underlying barrier layer, and the ultra-thin metal seed layer being a non-continuous layer having voids;
(b) repairing the ultra-thin metal seed layer by electrochemically depositing additional metal on the ultra-thin metal seed layer within a principal fluid chamber of a reactor to provide an enhanced seed layer using a second deposition process, that is different from the first deposition process, comprising supplying electroplating power to a plurality of concentric anodes disposed at different positions within the principal fluid flow chamber relative to the workpiece; and
(c) electrolytically depositing a metal on the enhanced seed layer under conditions in which the deposition rate of the electrolytic deposition process is substantially greater than the deposition rate of the process used to repair the metal seed layer.
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Accused Products
Abstract
A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.
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Citations
59 Claims
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1. A process for applying a metallization interconnect structure, comprising:
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(a) providing a workpiece on which an ultra-thin metal seed layer has been formed using a first deposition process, the first deposition process being a vapor-phase deposition process that anchors the ultra-thin metal seed layer to an underlying barrier layer, and the ultra-thin metal seed layer being a non-continuous layer having voids;
(b) repairing the ultra-thin metal seed layer by electrochemically depositing additional metal on the ultra-thin metal seed layer within a principal fluid chamber of a reactor to provide an enhanced seed layer using a second deposition process, that is different from the first deposition process, comprising supplying electroplating power to a plurality of concentric anodes disposed at different positions within the principal fluid flow chamber relative to the workpiece; and
(c) electrolytically depositing a metal on the enhanced seed layer under conditions in which the deposition rate of the electrolytic deposition process is substantially greater than the deposition rate of the process used to repair the metal seed layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. A process for applying a metallization interconnect structure, comprising:
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(a) providing a workpiece on which an ultra-thin metal seed layer has been formed using a first deposition process, the first deposition process being a vapor-phase deposition process that anchors the ultra-thin metal seed layer to an underlying layer, and the ultra-thin metal seed layer being a non-continuous layer having voids;
(b) repairing the ultra-thin metal seed layer by electrochemically depositing additional metal on the ultra-thin metal seed layer within a principal fluid chamber of a reactor to provide an enhanced seed layer using a second deposition process, that is different from the first deposition process, comprising supplying electroplating power to a plurality of electrodes within the principal fluid flow chamber, wherein at least two of the plurality of electrodes are interdependently connected to an electrical power supply, further comprising independently controlling the supply of electrical power to the at least two electrodes during repair of the ultra-thin metal seed layer; and
(c) electrolytically depositing a metal on the enhanced seed layer under conditions in which the deposition rate of the electrolytic deposition process is substantially greater than the deposition rate of the process used to repair the metal seed layer. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36)
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37. A process for applying a metallization interconnect structure to a workpiece on which an ultra-thin metal seed layer has been formed using a first deposition process, the first deposition process being a vapor-phase deposition process that anchors the ultra-thin metal seed layer to an underlying layer, and the ultra-thin metal seed layer being a non-continuous layer having voids, comprising
(a) subjecting the workpiece to an electrochemical deposition process that is different from the first deposition process in an alkaline electroplating bath comprising metal ions complexed with a complexing agent such that additional metal is deposited on the ultra-thin copper seed layer to thereby repair the seed layer resulting in an enhanced seed layer, the second deposition process being carried out by supplying electroplating power to a plurality of concentric anodes disposed at different positions relative to the workpiece within a principal fluid flow chamber of a reactor; - and
(b) electrolytically depositing a metal on the enhanced seed layer under conditions in which the deposition rate of the electrolytic deposition process is substantially greater than the deposition rate of the process used to repair the metal seed layer. - View Dependent Claims (38, 39, 40, 41, 42, 43, 44, 45)
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46. A process for applying a metallization interconnect structure to a workpiece on which an ultra-thin copper seed layer has been formed using a first deposition process, the first deposition process being a vapor-phase deposition process that anchors the ultra-thin copper seed layer to an underlying layer, and the ultra-thin copper seed layer being a non-continuous layer having voids, comprising:
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(a) subjecting the workpiece to an electrochemical deposition process that is different from the first deposition process in an alkaline electroplating bath comprising metal ions complexed with a complexing agent such that additional metal is deposited on the ultra-thin copper seed layer to thereby repair the seed layer resulting in an enhanced seed layer, comprising supplying electroplating power to a plurality of electrodes within the principal fluid flow chamber, wherein at least two of the plurality of electrodes are independently connected to an electrical power supply, further comprising independently controlling the supply of electrical power to the at least two electrodes during repair of the ultra-thin copper seed layer; and
(b) electrolytically depositing a metal on the enhanced seed layer under conditions in which the deposition rate of the electrolytic deposition process is substantially greater than the deposition rate of the process used to repair the metal seed layer. - View Dependent Claims (47, 48, 49, 50, 51, 52, 53, 54)
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55. A process for applying a metallization interconnect structure to a workpiece on which an ultra-thin metal seed layer has been formed using a first deposition process, the first deposition process being a vapor-phase deposition process that anchors the ultra-thin metal seed layer to an underlying layer, and the ultra-thin metal seed layer being a non-continuous layer having voids, comprising:
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(a) repairing the ultra-thin metal seed layer by electrochemically depositing additional metal on the ultra-thin metal seed layer within a principal fluid flow chamber of a reactor to provide an enhanced seed layer using a second deposition process that is different from the first deposition process; and
(b) electrolytically depositing a metal on the enhanced seed layer under conditions in which the deposition rate of the electrolytic deposition process is substantially greater than the deposition rate of the process used to repair the metal seed layer, comprising supplying electroplating power to a plurality of concentric anodes disposed at different positions within the principal fluid flow chamber relative to the workpiece. - View Dependent Claims (56, 57)
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58. A process for applying a metallization interconnect structure to a workpiece on which an ultra-thin metal seed layer has been formed using a first deposition process, the first deposition process being a vapor-phase deposition process that anchors the ultra-thin metal seed layer to an underlying layer, and the ultra-thin metal seed layer being a non-continuous layer having voids, comprising:
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(a) repairing the ultra-thin metal seed layer by electrochemically depositing additional metal on the ultra-thin metal seed layer to provide an enhanced seed layer using a second deposition process that is different from the first deposition process; and
(b) electrolytically depositing a metal on the enhanced seed layer within a principal fluid chamber of a reactor under conditions in which the deposition rate of the electrolytic deposition process is substantially greater than the deposition rate of the process used to repair the metal seed layer, comprising supplying electroplating power to a plurality of electrodes within the principal fluid flow chamber wherein at least two of the plurality of electrodes are independently connected to an electrical power supply, further comprising independently controlling the supply of electrical power to the at least two electrodes during deposition. - View Dependent Claims (59)
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Specification