Method for manufacturing porous structure and method for forming pattern

• US 6,565,763 B1
• Filed: 06/07/2000
• Issued: 05/20/2003
• Est. Priority Date: 06/07/1999
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Hiraoka, Toshiro, Asakawa, Koji, Hotta, Yasuyuki, Akasaka, Yoshihiro
• Primary Examiner(s): ALANKO, ANITA KAREN
• Application Number:
  US09/588,721
• Time in Patent Office: 1,077 Days
• Field of Search: 216/56, 216/49, 216/67, 216/22, 216/24, 216/40, 216/41, 521/61
• US Class Current: 216/56
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: C03C 17/007 containing a dispersed phase, e.g. particles, fibres or flakes, in a continuous phase
• CPC Class Codes: C03C 2217/425 consisting of a porous layer
• CPC Class Codes: C03C 2217/479 Metals
• CPC Class Codes: C03C 2218/33 by etching
• CPC Class Codes: C08J 2333/12 Homopolymers or copolymers of methyl methacrylate
• CPC Class Codes: C08J 2383/16 in which all the silicon atoms are connected by linkages other than oxygen atoms
• CPC Class Codes: C08J 9/26 by elimination of a solid phase from a macromolecular composition or article, e.g. leaching out
• CPC Class Codes: C23F 1/30 for etching other metallic material
• CPC Class Codes: G03F 7/0002 Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
• CPC Class Codes: G11B 2005/0029 using magnetisation components of the recording layer disposed mainly perpendicularly to the record carrier surface
• CPC Class Codes: G11B 5/74 Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
• CPC Class Codes: G11B 5/743 Patterned record carriers, wherein the magnetic recording layer is patterned into magnetic isolated data islands, e.g. discrete tracks
• CPC Class Codes: G11B 5/855 Coating only part of a support with a magnetic layer
• CPC Class Codes: H01G 11/30 characterised by their material
• CPC Class Codes: H01G 11/56 Solid electrolytes, e.g. gels; Additives therein
• CPC Class Codes: H01J 9/02 Manufacture of electrodes or electrode systems
• CPC Class Codes: H01J 9/025 of field emission cathodes
• CPC Class Codes: H01L 21/02118 carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC polymers per se C08G, photoresist per se G03F
• CPC Class Codes: H01L 21/02126 : the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02203 : the layer being porous
• CPC Class Codes: H01L 21/02211 : the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02216 : the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02282 : liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/02337 : treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/02348 : treatment by exposure to UV light
• CPC Class Codes: H01L 21/0337 : characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/31695 : Deposition of porous oxides or porous glassy oxides or oxide based porous glass
• CPC Class Codes: H01M 10/0525 : Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
• CPC Class Codes: H01M 4/131 : Electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
• CPC Class Codes: H01M 4/133 : Electrodes based on carbonaceous material, e.g. graphite-intercalation compounds or CFx
• CPC Class Codes: H01M 4/8605 : Porous electrodes
• CPC Class Codes: H01M 4/96 : Carbon-based electrodes
• CPC Class Codes: H01M 50/406 : Moulding; Embossing; Cutting
• CPC Class Codes: H01M 50/414 : Synthetic resins, e.g. thermoplastics or thermosetting resins
• CPC Class Codes: H01M 8/0234 : Carbonaceous material
• CPC Class Codes: H01M 8/0245 : in the form of layered or coated products
• CPC Class Codes: H01M 8/026 : characterised by grooves, e.g. their pitch or depth
• CPC Class Codes: H01M 8/1011 : Direct alcohol fuel cells [DAFC], e.g. direct methanol fuel cells [DMFC]
• CPC Class Codes: Y02E 60/10 : Energy storage using batteries
• CPC Class Codes: Y02E 60/13 : Energy storage using capacitors
• CPC Class Codes: Y02E 60/50 : Fuel cells
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10S 438/945 : Special, e.g. metal
• CPC Class Codes: Y10S 438/947 : Subphotolithographic processing
• CPC Class Codes: Y10S 977/90 : having step or means utilizing mechanical or thermal property, e.g. pressure, heat
• CPC Class Codes: Y10T 428/24149 : Honeycomb-like

Abstract

A pattern forming material contains a block copolymer or graft copolymer and forms a structure having micro polymer phases, in which, with respect to at least two polymer chains among polymer chains constituting the block copolymer or graft copolymer, the ratio between N/(Nc−No) values of monomer units constituting respective polymer chains is 1.4 or more, where N represents total number of atoms in the monomer unit, Nc represents the number of carbon atoms in the monomer unit, No represents the number of oxygen atoms in the monomer unit.

Claims

1. A method for forming a pattern, comprising:

forming, on a underlyer, a pattern forming film,

wherein said underlayer comprises at least one material selected from the group consisting of semiconductor, SiO, glass and metal; and

wherein said film comprises a block copolymer or a graft copolymer comprising a polymer chain containing aromatic rings and an acrylic polymer chain;

forming a structure having a microphase-separated polymer in the pattern forming film, wherein said microphase-separated polymer comprises at least first and second polymer microphases;

successively removing, by a single dry-etching process, the first polymer microphase of the microphase-separated polymer and a portion of the underlayer under the removed first polymer microphase;

wherein in said dry-etching process, the underlayer under the first polymer microphase is etched using the second polymer microphase as a mask to transfer a polymer microphase pattern to the underlayer.

2. The method according to claim 1, wherein the first polymer microphase comprises the acrylic polymer chain, and the second polymer microphase comprises the polymer chain containing aromatic rings.

3. The method according to claim 1, wherein the dry-etching uses CF₄ or CHF₃.

4. The method according to claim 1, further comprising forming a lower pattern transfer film on a substrate, and forming said underlayer as an upper pattern transfer film on said lower pattern transfer film, and wherein said pattern forming film is formed on the underlayer as the upper pattern transfer film.

5. The method according to claim 4, wherein a ratio of dry etch rates between the pattern transfer film and a polymer chain having a lowest dry etch rate among the polymer chains constituting the block copolymer or graft copolymer is 0.1 or more.

6. The method according to claim 1, wherein the polymer chain containing aromatic rings is a polymer chain synthesized by polymerizing at least one monomer selected from the group consisting of vinyl naphthalene, styrene and derivatives thereof, and the acrylic polymer chain is a polymer chain synthesized by polymerizing at least one monomer selected from the group consisting of acrylic acid, methacrylic acid, crotonic acid and derivatives thereof.

7. The method according to claim 1, wherein the acrylic polymer chain has a molecular weight of 100,000 or less, and wherein the copolymer has a molecular weight distribution (Mw/Mn) of 1.20 or less, and wherein a molecular weight ratio between the polymer chain containing aromatic rings and the acrylic polymer chain ranges from 75:

25 to 90;

10.

8. The method according to claim 1, wherein the copolymer has a molecular weight of 50,000 or more and has a molecular weight distribution (Mw/Mn) of 1.15 or less, and wherein a molecular weight ratio between the polymer chain containing aromatic rings and the acrylic polymer chain ranges from 75:

25 to 90;

10.

9. The method according to claim 1, wherein the pattern forming film further comprises a metal element selected from the group consisting of Cr, V, Nb, Ti, Al, Mo, Li, Lu, Rh, Pb, Pt, Au and Ru.

10. The method according to claim 1, wherein the pattern forming film further comprises a plasticizer.

11. The method according to claim 1, wherein the pattern forming film further comprises an antioxidant or light stabilizer.