Method of manufacturing high performance semiconductor device with reduced lattice defects in the active region

• US 6,566,231 B2
• Filed: 02/23/2001
• Issued: 05/20/2003
• Est. Priority Date: 02/24/2000
• Status: Expired due to Fees

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Ogawa, Masahiro, Ishida, Masahiro, Yuri, Masaaki, Nakamura, Shinji, Orita, Kenji, Imafuji, Osamu
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Nguyen, Thinh
• Application Number:
  US09/790,908
• Publication Number:
  US 20010029086A1
• Time in Patent Office: 816 Days
• Field of Search: 438/448, 438/42, 257/345, 257/103, 257/639, 117/95, 117/88
• US Class Current: 438/448
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02389 Nitrides
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02546 Arsenides
• CPC Class Codes: H01L 21/02642 Mask materials other than SiO2 or SiN
• CPC Class Codes: H01L 21/02647 Lateral overgrowth
• CPC Class Codes: H01L 33/007 comprising nitride compounds

Abstract

A first semiconductor layer is epitaxially grown on a semiconductor substrate and patterned to form concave and convex portions. A second semiconductor layer is formed on the first semiconductor layer using a top epitaxial mask covering the top surface of the convex portion. Lattice defects D propagating from the first semiconductor layer exist only in a region located above the center of the concave portion (a defect region Ra), while in the other region (a low defect region Rb) lattice defects D propagating from the first semiconductor layer hardly exist.

Claims

1. A method for fabricating a semiconductor device, comprising the steps of:

(a) forming a coat layer on a first semiconductor layer of a substrate, the coat layer being made of a material having a function of suppressing epitaxial growth of a semiconductor on the first semiconductor layer;

(b) etching the coat layer and the first semiconductor layer to form in the first semiconductor layer at least one convex portion having a top surface and a side face intersecting with the top surface while forming a top epitaxial mask made of the coat layer on the at least one convex portion;

(c) forming a second semiconductor layer on the first semiconductor layer by epitaxial growth after the step (b); and

(d) forming a semiconductor element operating using a region of the second semiconductor layer located above the convex portion as an active region.

2. The method for fabricating a semiconductor device of claim 1, wherein in the step (b), at least two convex portions are formed, and

the method further comprises the step of forming a bottom epitaxial mask on a bottom surface of a concave portion sandwiched by the two convex portions after the step (b) and before the step (c).

3. The method for fabricating a semiconductor device of claim 1, further comprising the steps of:

forming an etching mask film after the step (a) and before the step (b); and

patterning the etching mask film to form an etching mask after the step (a) and before the step (b),

wherein in the step (b), the coat layer and the first semiconductor layer are etched using the etching mask.

4. The method for fabricating a semiconductor device of claim 1, wherein in the step (a), a film made of a material capable of selectively etching the first semiconductor layer is formed as the coat layer,

in the step (b), the coat layer is patterned to form an etching mask, and then the first semiconductor layer is etched using the etching mask, and

in the step (c), the second semiconductor layer is epitaxially grown using the etching mask as an epitaxial mask.

5. The method for fabricating a semiconductor device of claim 1, wherein in the step (a), a SiO₂ film is formed as the coat layer.

6. A method for fabricating a semiconductor device, comprising the steps of:

(a) forming an etching mask on a first semiconductor layer of a substrate;

(b) etching the first semiconductor layer using the etching mask to form in the first semiconductor layer at least one convex portion having a top surface having a size smaller than the etching mask and a side face intersecting with the top surface;

(c) forming a second semiconductor layer by epitaxial growth on the first semiconductor layer after the step (b); and

(d) forming a semiconductor element operating using a region of the second semiconductor layer ranging from the side face of the convex portion to part of a bottom surface of a concave portion as an active region.

7. The method for fabricating a semiconductor device of claim 6, wherein in the step (a), the etching mask is a film made of a material etched during the etching in the step (b) and reduced in lateral size by the etching.

8. The method for fabricating a semiconductor device of claim 6, wherein in the step (a), the etching mask is made of a material having translucency, and

in the step (b), the size of the top surface of the convex portion is reduced by etching a portion of the first semiconductor layer located below the etching mask while irradiating the first semiconductor layer with light from above the etching mask.

9. The method for fabricating a semiconductor device of claim 6, wherein in the step (b), a tilt angle of the side face of the convex portion is controlled to be a desired value by selection of etching conditions.

10. A method for fabricating a semiconductor device, comprising the steps of:

(a) forming a first semiconductor layer made of a Group III nitride on a substrate;

(b) forming a second semiconductor layer made of a material having a function of adhering to the first semiconductor layer on the first semiconductor layer;

(c) forming an etching mask on the second semiconductor layer;

(d) etching the first and second semiconductor layers using the etching mask to form in the first semiconductor layer at least one convex portion having a top surface and a side face intersecting with the top surface;

(e) forming a top epitaxial mask on the second semiconductor layer remaining on the top surface of the convex portion of the first semiconductor layer;

(f) forming a third semiconductor layer on the first semiconductor layer by epitaxial growth after the step (e); and

(g) forming a semiconductor element operating using a region of the third semiconductor layer located above the convex portion as an active region.

11. The method for fabricating a semiconductor device of claim 10, wherein in the step (c), the etching mask is formed by patterning a SiO₂ film.

12. The method for fabricating a semiconductor device of claim 10, wherein the step (c) is performed by reactive ion etching with a gas containing chlorine.

13. A method for fabricating a semiconductor device, comprising the steps of:

(a) forming an Al-containing underlying semiconductor layer and a first semiconductor layer made of a Group III nitride sequentially on a substrate;

(b) forming an etching mask on the first semiconductor layer;

(c) etching the first semiconductor layer using the etching mask to form in the first semiconductor layer at least one convex portion having a top surface and a side face intersecting with the top surface;

(d) forming a top epitaxial mask on the top surface of the convex portion of the first semiconductor layer;

(e) forming a second semiconductor layer on the first semiconductor layer by epitaxial growth after the step (d); and

(f) forming a semiconductor element operating using a region of the second semiconductor layer located above the convex portion as an active region.

14. The method for fabricating a semiconductor device of claim 13, further comprising the step of:

forming a third semiconductor layer made of a material having a function of adhering to the first semiconductor layer on the first semiconductor layer after the step (a) and before the step (b),

wherein in the step (b), the etching mask is formed on the third semiconductor layer,

in the step (c), part of the third semiconductor layer is left on the top surface of the convex portion, and

in the step (d), the top epitaxial mask is formed on the part of the third semiconductor layer.

15. The method for fabricating a semiconductor device of claim 14, wherein the third semiconductor layer is an AlAs layer, and

in the step (d), the top epitaxial mask is formed by oxidizing a surface portion of the AlAs layer.

16. The method for fabricating a semiconductor device of claim 15, wherein in the step (c), the first semiconductor layer is etched until the underlying semiconductor layer is exposed to form the mesa-shaped convex portion on the underlying semiconductor layer, and

the method further comprises the step of forming a bottom epitaxial mask by oxidizing an exposed surface portion of the underlying semiconductor layer.

17. A method for fabricating a semiconductor substrate, comprising the steps of:

(a) forming an etching mask on a first semiconductor layer made of a Group III nitride formed on a substrate for crystal growth;

(b) etching the first semiconductor layer using the etching mask to form in the first semiconductor layer at least one convex portion having a top surface and a side face intersecting with the top surface;

(c) forming a second semiconductor layer on the first semiconductor layer by epitaxial growth after the step (b); and

(d) removing the substrate for crystal growth.

18. The method for fabricating a semiconductor substrate of claim 17, further comprising the step of forming a top epitaxial mask used in the step (c) on the top surface of the convex portion of the first semiconductor layer.

19. The method for fabricating a semiconductor substrate of claim 18, wherein the substrate for crystal growth includes a base plate and an Al-containing underlying semiconductor layer formed on the base plate,

in the step (b), the first semiconductor layer is etched until the underlying semiconductor layer is exposed, and

the top epitaxial mask is formed by oxidizing an exposed surface portion of the underlying semiconductor layer before the step (c).