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Deposition of conformal copper seed layers by control of barrier layer morphology

  • US 6,566,246 B1
  • Filed: 05/21/2001
  • Issued: 05/20/2003
  • Est. Priority Date: 05/21/2001
  • Status: Active Grant
First Claim
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1. A method of forming a barrier layer comprising tantalum nitride by physical vapor deposition on a semiconductor substrate, such that the barrier layer reduces agglomeration and notching of a copper seed layer formed on top of the barrier layer, the method comprising:

  • sputtering a target comprising tantalum; and

    introducing a nitrogen source in an amount so that the surface of the barrier layer displays a randomness of at least about 50%.

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