Thin-film transistor display devices

• US 6,566,686 B2
• Filed: 03/06/2002
• Issued: 05/20/2003
• Est. Priority Date: 02/29/1996
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Dong-gyu
• Primary Examiner(s): Abraham, Fetsum
• Application Number:
  US10/092,282
• Publication Number:
  US 20020093021A1
• Time in Patent Office: 440 Days
• Field of Search: 257/59, 257/72, 257/347-352
• US Class Current: 257/59
• CPC Class Codes: G02F 1/13458 Terminal pads
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/13629 Multilayer wirings
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate

Abstract

Thin-film transistor display devices include composite electrodes which provide low resistance contacts and paths for electrical signals and are less susceptible to parasitic metal migration which can limit display quality and lifetime. In particular, a thin-film transistor (TFT) display device is provided having an insulated gate electrode on a face of a substrate (e.g., transparent substrate) and a semiconductor layer on the insulated gate electrode, opposite the face of the substrate. Spaced apart source and drain electrodes are also provided on the semiconductor layer. These source and drain electrodes each preferably comprise a composite of at least two layers containing respective metals therein of different element type. Preferably, one of the layers comprises a metal which is capable of forming a low resistance contact with electrodes such as a pixel electrode (e.g., transparent indium-tin-oxide electrode) and the other of the layers comprises a relatively low resistance metal so that the overall effective resistance of each composite electrode is maintained at a low level.

Claims

1. A thin film transistor display device, comprising:

a gate electrode on a face of a substrate;

a first insulating layer on said gate electrode;

a patterned semiconductor layer on said first insulating layer;

spaced apart source and drain electrodes on said patterned semiconductor layer;

a second insulating layer having a contact hole therein that exposes at least a part of side surfaces of said spaced apart source and drain electrodes; and

a pixel electrode on said second insulating layer, said pixel electrode extending into said contact hole and contacting said part of side surfaces of said spaced apart source and drain electrodes.

2. The display device of claim 1, wherein said gate electrode comprises at least a refractory metal layer.

3. The display device of claim 1, wherein said spaced apart source and drain electrodes comprises at least a refractory metal layer.

4. The display device of claim 3, wherein said drain electrode comprises a refractory metal layer and a first metal layer different from said refractory metal layer.

5. The display device of claim 1, wherein said second insulating layer directly contacts a portion of said semiconductor layer.

6. The display device of claim 1, further comprising a gate line on a face of said substrate;

and a gate pad on said second insulating layer, said gate pad extending into said first and second contact holes and contacting said part of side surfaces of said gate line,

wherein said first insulating layer having a first contact hole therein that exposes at least a part of side surfaces of said gate line and said second insulating layer having a second contact hole therein coinciding with said first contact hole of said first insulating layer, so that at least said part of side surfaces of said gate line is exposed.

7. The display device of claim 1, further comprising a data line on said first insulating layer and a data pad on said second insulating layer, said data pad extending into said contact hole and contacting said part of side surfaces of said data line,

wherein said second insulating layer having a third contact hole therein that exposes at least a part of side surfaces of said data line.

8. The display device of claim 1, wherein said gate electrode is getting narrower from the bottom to the top thereof.

9. A thin film transistor display device, comprising:

a substrate;

a gate electrode on said substrate, said gate electrode getting narrower from the bottom to the top thereof;

a gate line on said substrate;

a first insulating layer on said gate electrode;

a patterned semiconductor layer on said first insulating layer;

spaced apart source and drain electrodes on said patterned semiconductor layer/

a second insulating layer having a contact hole therein that exposes at least a part of said spaced apart source and drain electrodes; and

a pixel electrode on said second insulating layer, said pixel electrode extending into said contact hole and contacting said part of said spaced apart source and drain electrodes.

10. The display device of claim 9, wherein said gate electrode comprises at least a refractory metal layer.

11. The display device of claim 10, wherein said gate electrode comprises a refractory metal layer and a first metal layer different from said refractory metal layer.