Trench-gate field-effect transistors with low gate-drain capacitance and their manufacture

• US 6,566,708 B1
• Filed: 11/16/2001
• Issued: 05/20/2003
• Est. Priority Date: 11/17/2000
• Status: Expired due to Term

• Current Assignee: Nexperia B.V. (Wingtech Technology Co., Ltd.)
• Original Assignee: Koninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
• Inventors: Peake, Steven T., Grover, Raymond J.
• Primary Examiner(s): Whitehead, Jr., Carl
• Assistant Examiner(s): Pham, Thanhha S
• Application Number:
  US09/993,201
• Time in Patent Office: 550 Days
• Field of Search: 257/328, 257/329, 257/330, 257/331, 257/332, 257/333, 257/339, 257/135, 257/134, 257/133, 257/119-122, 257/256, 257/260, 257/261, 257/262, 257/302, 438/212, 438/268, 438/259, 438/270, 438/271, 438/133-137, 438/242
• US Class Current: 257/330
• CPC Class Codes: H01L 29/402 Field plates
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41741 for vertical or pseudo-vertical devices
• CPC Class Codes: H01L 29/4916 the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/7397 and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
• CPC Class Codes: H01L 29/7808 the other device being a breakdown diode, e.g. Zener diode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

Trench-gate field-effect transistors, for example power MOSFETs, are disclosed having trenched electrode configurations (11,23) that permit fast switching of the transistor, while also providing over-voltage protection for the gate dielectric (21) and facilitating manufacture. The gate electrode (11) comprising a semiconductor material of one conductivity type (n) is present in an upper part of a deeper insulated trench (20,21) that extends into a drain region (14,14a) of the transistor. A lower electrode (23) connected to a source (13,33) of the transistor is present in the lower part of the trench. This lower electrode (23) comprises a semiconductor material of opposite conductivity type (p) that adjoins the semiconductor material of the gate electrode (11) to form a p-n junction (31) between the gate electrode (11) and the lower electrode (23). The p-n junction (31) provides a protection diode (D) between the gate electrode (11) and the source (13,33). The gate electrode (11) is shielded from most of the drain region by the lower electrode (23), so reducing the gate-drain capacitance and improving the switching speed of the transistor.

Claims

1. A trench-gate field-effect transistor comprising a semiconductor body in which an insulated trench extends from a surface of the body into a drain region of the transistor, a gate electrode comprising a semiconductor material of one conductivity type is present in an upper part of the trench to form a gate of the transistor insulated by the trench, and a lower electrode is present in a lower part of the trench and is connected to a source of the transistor separate from the drain region to shield the gate from most of the drain region, the transistor being characterized in that the lower electrode comprises a semiconductor material of a conductivity type opposite to the one conductivity type of said gate electrode, and that the semiconductor material of the lower electrode adjoins the semiconductor material of the gate electrode to form a p-n junction between the gate electrode and the lower electrode.

2. A transistor as claimed in claim 1, further characterised in that the semiconductor material of the lower electrode has a doping concentration of the opposite conductivity type that is lower in magnitude than the doping concentration of the one conductivity type of the gate electrode.

3. A transistor as claimed in claim 2, further characterised in that the semiconductor material of the lower electrode has a doping concentration of the opposite conductivity type that is less than 10¹⁸ dopant atoms cm⁻

3.

4. A transistor as claimed in claim 1, further characterised in that the semiconductor material of the gate electrode has a doping concentration of the one conductivity type that reduces in magnitude adjacent to the p-n junction with the lower electrode.

5. A transistor as claimed in claim 1, further characterised by having a power device layout in which the lower electrode is connected to a source electrode at distributed locations in the layout.

6. A transistor as claimed in claim 1, further characterised in that, at a source-connection area of the trench, the lower electrode has a connection region of said opposite conductivity type that extends through the upper part of the trench where it is contacted by a source electrode.

7. A transistor as claimed in claim 6, further characterised in that, the semiconductor material that provides the lower electrode is present from the lower part of the trench through the upper part of the trench, and is over-doped in the upper part with a doping concentration of the one conductivity type to form the gate electrode except at the source-connection area of the trench.

8. A transistor as claimed in claim 1, further characterised in that the insulated trench comprises a thicker insulator adjacent to the lower electrode than adjacent to the gate electrode.